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Doped organic semiconductors play a central role in the development of several innovative optoelectronic and energy harvesting applications. Currently, the realization of thermoelectric generators, which require both hole‐ and electron‐transporting materials with high electrical conductivity, is strongly hindered by the scarce availability of stable solution‐processable n‐dopants and their limited efficiency. Herein, the synthesis of 4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzimidazol‐2‐yl)‐dibenzazepine (IStBI), a novel derivative belonging to the well‐known family of the benzimidazoline compounds, is presented. The functionalization with the planarized and rigid iminostilbene substituent allows, without significantly affecting the compound electronic structure, an efficient intercalation of the dopant molecules inside the ordered regions of thin films of the benchmark n‐type polymer poly(N,N′‐bis‐2‐octyldodecylnaphthalene‐1,4,5,8‐bis‐dicarboximide‐2,6‐diyl‐alt‐5,5′‐2,2′‐bithiophene) P(NDI2OD‐T2). Consequently, a maximum electrical conductivity of (1.14 ± 0.13) × 10−2 S cm−1 is recorded, exceeding by one order of magnitude what previously achieved upon solution doping of the reference P(NDI2OD‐T2) with benzimidazoline derivatives. The thermoelectric power factor is also simultaneously increased. The findings confirm that tailoring of the dopant chemical structure to improve structural interactions with the host semiconductors can be employed as a successful strategy to achieve more effective n‐doping, helping to close the performance gap with p‐type materials. [ABSTRACT FROM AUTHOR]

Abstract Doped organic semiconductors play a central role in the development of several innovative optoelectronic and energy harvesting applications. Currently, the realization of thermoelectric generators, which require both hole‐ and electron‐transporting materials with high electrical conductivity, is strongly hindered by the scarce availability of stable solution‐processable n‐dopants and their limited efficiency. Herein, the synthesis of 4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzimidazol‐2‐yl)‐dibenzazepine (IStBI), a novel derivative belonging to the well‐known family of the benzimidazoline compounds, is presented. The functionalization with the planarized and rigid iminostilbene substituent allows, without significantly affecting the compound electronic structure, an efficient intercalation of the dopant molecules inside the ordered regions of thin films of the benchmark n‐type polymer poly(N,N′‐bis‐2‐octyldodecylnaphthalene‐1,4,5,8‐bis‐dicarboximide‐2,6‐diyl‐alt‐5,5′‐2,2′‐bithiophene) P(NDI2OD‐T2). Consequently, a maximum electrical conductivity of (1.14 ± 0.13) × 10−2 S cm−1 is recorded, exceeding by one order of magnitude what previously achieved upon solution doping of the reference P(NDI2OD‐T2) with benzimidazoline derivatives. The thermoelectric power factor is also simultaneously increased. The findings confirm that tailoring of the dopant chemical structure to improve structural interactions with the host semiconductors can be employed as a successful strategy to achieve more effective n‐doping, helping to close the performance gap with p‐type materials.

The orientational control of semiconducting polymers (SCPs) in floating films offers several advantages over conventional solution‐processing methods for device fabrication, and the unidirectional floating film transfer method (UFTM) has been applied to fabricate large‐area oriented p‐type SCP films. Here, UFTM can be used to prepare high‐performance n‐type SCP films of P(NDI2OD‐T2) is reported. A strong correlation between the degree of polymer orientation and the solvent used for the preparation of P(NDI2OD‐T2) floating films is observed. In particular, the size of the nanofibers aligned along the orientation direction prepared using chloroform is dramatically increased by adding a small amount of chlorobenzene. Microstructural characterization reveals that the P(NDI2OD‐T2) floating films are uniaxially aligned with edge‐on orientation, whereas the spin‐coated films are isotropic with face‐on orientation. Notably, the floating films of P(NDI2OD‐T2) prepared with solvent blending have higher electron mobility with ambipolar‐like device characteristics and high threshold voltage (VTH) of ≈25 V. Finally, using the one‐step immersion process, the introduction of an interlayer of hexa(ethylene glycol)‐dithiol between the source/drain contacts and P(NDI2OD‐T2) film results in a drastic improvement in device, giving unipolar n‐channel transistor characteristics with a VTH of ≈0 V, on/off ratio of >105, and mobility reliability factor of almost 100%. [ABSTRACT FROM AUTHOR]

Abstract The orientational control of semiconducting polymers (SCPs) in floating films offers several advantages over conventional solution‐processing methods for device fabrication, and the unidirectional floating film transfer method (UFTM) has been applied to fabricate large‐area oriented p‐type SCP films. Here, UFTM can be used to prepare high‐performance n‐type SCP films of P(NDI2OD‐T2) is reported. A strong correlation between the degree of polymer orientation and the solvent used for the preparation of P(NDI2OD‐T2) floating films is observed. In particular, the size of the nanofibers aligned along the orientation direction prepared using chloroform is dramatically increased by adding a small amount of chlorobenzene. Microstructural characterization reveals that the P(NDI2OD‐T2) floating films are uniaxially aligned with edge‐on orientation, whereas the spin‐coated films are isotropic with face‐on orientation. Notably, the floating films of P(NDI2OD‐T2) prepared with solvent blending have higher electron mobility with ambipolar‐like device characteristics and high threshold voltage (VTH) of ≈25 V. Finally, using the one‐step immersion process, the introduction of an interlayer of hexa(ethylene glycol)‐dithiol between the source/drain contacts and P(NDI2OD‐T2) film results in a drastic improvement in device, giving unipolar n‐channel transistor characteristics with a VTH of ≈0 V, on/off ratio of >105, and mobility reliability factor of almost 100%.

It is widely recognized that fullerene derivatives show several advantages as n-type materials in photovoltaic applications. However, conventional [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) exhibits weak absorption in the visible region, and poor morphological stability, due to the facile aggregation. For further improvement of the device performance and durability, utilization of n-type polymeric materials instead of PCBM is considered to be a good way to solve the problems. In this study, we fabricated completely polymer-based solar cells utilizing p- and n-type block copolymers consisting of poly(3-hexylthiophene) (P3HT) and poly{[N,N'-bis(2-octyldodecyl) naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} [P(NDI2OD-T2)], respectively, containing common polystyrene (PSt) inert blocks, which decreased the size of phase separated structures. Electron mobility in synthesized P(NDI2OD-T2)-b-PSt film enhanced by a factor of 8 compared with homopolymer. The root mean square roughness of the blend film of two block copolymers (12.2 nm) was decreased, compared with that of the simple homopolymers blend (18.8 nm). From the current density-voltage characteristics, it was confirmed that the introduction of PSt into both P3HT and P(NDI2OD-T2) improves short-circuit current density (1.16 to 1.73 mA cm-2 and power-conversion efficiency (0.24% to 0.32%). Better performance is probably due to the uniformity of the phase separation, and the enhancement of charge mobility. [ABSTRACT FROM AUTHOR]