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Two kinds of N2 plasma source, ECR (electron cyclotron resonance) and GDS (glow discharge source) generating mostly N-radical atoms and N-cationic species respectively, were used to grow a thin nitride layer on a GaAs(100) substrate. It was found that this nitridation followed by annealing at 620 °C permits the crystallization of the nitride layer. Pyramidal Zinc Blende GaN nanostructures (zb-GaN) with four facets were obtained using GDS plasma. Surprisingly, a planar and pure wurtzite structure (w-GaN) was obtained using the ECR source. This w-GaN structure shows low photoluminescence intensity and a biaxial tensile strain due to lattice mismatch. Accordingly, the operator can select which phase is formed, simply by switching plasma source. The valence band discontinuity ΔEv has been determined to be 1.74 eV for the zb-GaN/GaAs and w-GaN/GaAs junctions by X-ray photoelectron spectroscopy. As a consequence the conduction bands of the GaAs substrate and the elaborated GaN thin layer are aligned for a zb-GaN/GaAs junction giving efficient electron transport at the zb-GaN/GaAs interface. For w-GaN/GaAs junction, the conduction band discontinuity ΔEc is 0.23 eV inducing an electron confinement in the GaAs(100) which can be an effective way to improve the electronic or optical properties of GaAs devices.

Gallium nitride is one of the III-V semiconductors the most promising in many application areas. Indeed, because of its large direct bandgap (3,4 eV), it can be dedicated to both optoelectronic applications as transistors achieve hyper frequency. It allows the manufacture of components stable at high temperatures and high frequencies. In this work we are interested in the nitriding of gallium arsenide substrates of n-type in order to obtain a thin layer of GaN. The samples were chemically cleaned immediately introduced into the chamber ultra-high vacuum. They then undergo ionic cleaning in situ by argon ions. Spectrometric analyzes do show the absence of any impurities from the surface, in fact, it only detects the presence of gallium and arsenic. Before proceeding to the nitriding of our structures, deposition of gallium is conducted for 20 minutes to send then simultaneously nitrogen and gallium. Analyzes were performed elaborate structures using X-ray photoelectron spectroscopy (XPS). Deposition of mercury (Hg) has been developed on the structures, we have then made an electrical characterization I-V to see the effect of nitriding on the resulting structure.

The model of quantitative interpretation of Auger electron spectroscopy (AES) results is described and some complementary electron energy loss spectroscopy (EELS) results are also reported. It is shown that the InP(100) surfaces perturbed by the Ar+ cleaning treatment can be ordered by Sb deposition. The variations of ditferent Auger lines are interpreted, and the transformations 3D → 2D of the initially formed In clusters can be well-followed during the frrst stages of the deposition. PACS numbers: 68.35.Βs, 68.35.Fx, 72.80.Ey, 82.80.Pv

International audience; The nitridation of InP(1 0 0) surfaces has been studied using synchrotron radiation photoemission. The samples were chemically cleaned and then ion bombarded, which cleaned the surface and also induced the formation of metallic indium droplets. The nitridation with a Glow Discharge Cell (GDS) produced indium nitride by reaction with these indium clusters. We used the In 4d and P 2p core levels to monitor the chemical state of the surface and the coverage of the species present. We observed the creation of In-N and P-N bonds while the In-In metallic bonds decrease which confirm the reaction between indium clusters and nitrogen species. A theoretical model based on stacked layers allows us to assert that almost two monolayers of indium nitride are produced. The effect of annealing on the nitridated layers at 450 °C has also been analysed. It appears that this system is stable up to this temperature, well above the congruent evaporation temperature (370 °C) of clean InP(1 0 0): no increase of metallic indium bonds due to decomposition of the substrate is detected as shown in previous works [L. Bideux, Y. Ould-Metidji, B. Gruzza, V. Matolin, Surf. Interface Anal. 34 (2002) 712] studying the InP(1 0 0) surfaces.

International audience; The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It is essential for the realization of such novel devices to grow high-quality nitride single crystals. In this paper, we report the first stages of the InP(1 0 0) surfaces nitridation in order to grow high-quality nitride films. Indeed, the nitridation process is an important step in the growth of nitrides [J. Vac. Sci. Technol. A 17 (1999) 2194; Phys. Status Solidi A 176 (1999) 595]. Previous works [Synth. Met. 90 (1997) 2233; Appl. Phys. Lett. 63 (1993) 1957] have shown that in situ Ar+ ions bombardment is useful on the one hand to clean the surface, and on the other hand to create droplets of metallic indium in well-controlled quantity. Then the indium metallic enrichment of the surface, monitoring by elastic peak electron spectroscopy (EPES) and Auger electron spectroscopy (AES) allows to prepare the III-V semiconductors surfaces to the nitridation step. The nitridated process has been performed with a high voltage plasma discharge cell and has been studied using quantitative Auger electron spectroscopy, elastic peak electron spectroscopy and electron energy loss spectroscopy (EELS), in order to optimize the conditions of InN layers formation.

The structure and sensing properties of a novel resistive NO2 sensor based on n-type InP epitaxial layers have been presented. The studies of sensor resistance changes due to adsorbed gas NO2 under exposures in the range from 20 to 100 ppb at a temperature of 80°C were performed. The thickness of the active InP layer changed from 0.2 to 0.4 Μm. The response time and signal stability was also investigated. Furthermore, the influence of surface states and near-surface region on sensor parameters in terms of the resistance relative changes was shown from numerical simulations. The analysis of the measured photoelectron spectroscopy (XPS) spectra confirmed the complex chemical composition of the InP oxides, which give rise to the high density of surface states.

This article investigates the nitridation effect of InP(100) semiconductor surfaces performed using a glow discharge cell. Auger electron spectroscopy and XPS were used to understand the different steps of this process. An important point is the initial quantity of metallic indium on the InP(100) surfaces. Indeed the indium droplets, created in well-known quantity, play the role of precursor. At a relatively low temperature of 523 K the system undergoes surface restructuring, which includes removal of the In droplets and the formation of two InN monolayers. Phosphorus-nitrogen bonds have been detected by the analysis of P LMM Auger peaks, and In-N bonds by analysis of the In 4d XPS peak. However, the presence or not of metallic indium inside this InN overlayer is crucial for passivation of the substrate. Ex situ photoluminescence measurements correlated to the electron spectroscopies results have shown the good passivation effect of the InP(100) surfaces by InN overlayers for 40 min of nitridation.

International audience; Auger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of InP(100) surfaces nitridation. This AES study combined with electrical measurements (intensity-potential) shows that the processes greatly differ depending on the nitridation angles. Results show that with grazing angle for nitrogen flow, the nitridation process is more efficient. Results obtained with AES spectra are coherent with electrical measurements : Hg/InN/InP(100) Schottky diodes present better electrical characteristics in the case of a grazing flow. That means, the adsorption of nitrogen on the surface is more important for this configuration.

This paper deals with both the theoretical and experimental analysis of electronic properties of n-type indium phosphide (n-InP) epitaxial layers covered by native oxides for gas sensor applications. The rigorous calculations of the influence of continuous surface states with U-shaped density distribution NSS(E) as well as surface fixed charge (QFC) representing adsorbed ionized species or surface ?-doping on the conductivity of n-InP layers were carried out. The surface state density minimum (NSS0) was changed from 1011 to 1013 eV-1cm-2. From the Hall effect measurements upon NO2 exposition the concentration of charge carriers was determined as a function of gas concentration. Additionally, the roughness of the n-InP surface before and after gas action was investigated by using AFM.

Many key technologies, to overcome some crucial steps, are needed for space missions. One of them concerns the re-entry: when the vehicle enters the atmosphere layer, its high velocity relative to the ground will generate significant friction and an increase in pressure. The kinetic energy of the object will be converted into heat energy and heat the gas forming a shock wave. Temperatures depend on the initial velocity, the atmosphere composition and its pressure. The gas is ionized and become plasma, it will therefore transfer its heat to the body of the probe not only by convection but also by radiation. To protect itself, the vehicle has a heat shield that can withstand extreme phenomena encountered during the descent. Additional constraints will impose a particular geometry and a heavy shield. So the goal is to have the lightest possible and effective protections to allow the probe to maximize its payload. For this, one of the key parameters is to know the behavior of the plasma and radiation produced during re-entry into the atmosphere. This thesis is positioned in this area of ​​study: experiments to create a re-entry plasma are intended to be observed by a spectrometer., La mise en œuvre de missions spatiales demande à développer de nombreuses technologies clés afin de surmonter certaines étapes cruciales. L’une d’entre elle concerne la rentrée atmosphérique : lorsque le véhicule pénètre dans la couche d’atmosphère, sa vitesse relative très grande par rapport au sol va engendrer des frottements importants ainsi qu’une augmentation de pression. L’énergie cinétique de l’objet va donc être transformée en énergie thermique et chauffer le gaz en formant une onde de choc. Les températures dépendent de la vitesse initiale, de la composition de l’atmosphère et de sa pression. Le gaz ainsi chauffé va s’ioniser et devenir un plasma, il va donc transférer sa chaleur au corps de la sonde non seulement par convection mais aussi par rayonnement. Afin de se protéger, le véhicule dispose d’un bouclier thermique pouvant résister aux phénomènes extrêmes rencontrés lors de la descente. Les contraintes supplémentaires vont imposer une géométrie particulière et un lourd bouclier. Ainsi l’objectif est d’avoir les protections les plus légères et efficaces possibles afin de permettre à la sonde de maximiser son emport en équipement scientifique. Pour cela, un des paramètres clés est de connaître le comportement et le rayonnement du plasma produit lors de la rentrée dans l’atmosphère. Cette thèse se positionne dans ce domaine d’étude: les expériences montées et réalisées ont pour objectif d’observer par moyens spectroscopiques un plasma correspondant à celui rencontré par les sondes spatiales.

EPES (Elastic Peak Electron Spectroscopy) allows measuring the percentage he of elastically backscattered electrons from the surface excited by an electron beam. This is a non destructive method which is very sensitive to the surface region. The aim of this work is to model the trajectory of elastic electrons in the matter with a computer simulation based on Monte Carlo method. This simulation allows interpreting experimental results of the EPES spectroscopy. We have moreover adapted this simulation for different surfaces transformed to micrometer and nanometer scales. Using an original method, based on a description of material layer by layer, I realized a computer program (MC1) that takes into account the path of elastic electrons in different layers of material. The number of electrons emerging from the surface depends on many parameters such as: the electron primary energy, the nature of the material, the incidence angle and the collection angles of the analyzer. In addition, I was interested in the effect of surface roughness and I showed that it plays an important role in the intensity of the elastic peak. Then, through an association of the EPES and the Monte Carlo simulation results, I deduced the growth patterns of gold on silver and copper substrates. The effects of the atomic arrangement and the surface excitations were then studied. For this, a new simulation MC2 that takes into account these two parameters has been developed to study nanoscale surfaces. These parameters not previously included in our MC1simulation play a important role in the elastic intensity. Then I have got a simple formula for interpreting the results obtained by the simulation for a RFA analyzer. To validate the different results of the simulation MC2, I realized nano-structured silicon surfaces, using aluminium oxide masks. Nano-pores have been created by Ar+ ions bombardment in UHV chamber on silicon surfaces.To control the morphology of the surfaces, I realized SEM images (Techinauv Casimir) ex-situ. The Monte Carlo simulations, developed here, associated with the EPES experimental results can estimate the depth, the diameter, the morphology of pores without the help of other ex-situ techniques., La spectroscopie EPES (Elastic Peak Electron Spectroscopy) permet de mesurer le pourcentage he d’électrons rétrodiffusés élastiquement par la surface d’un échantillon soumis à un bombardement électronique. C’est une méthode non destructive et extrêmement sensible à la surface. L'objectif de ce travail est de modéliser le cheminement des électrons élastiques dans la matière grâce à une simulation informatique basée sur la méthode Monte Carlo. Cette simulation contribue de manière essentielle à la connaissance et à l'interprétation des résultats expérimentaux obtenus par spectroscopie EPES. Nous avons, de plus, adapté cette simulation à différentes surfaces transformées à l’échelle micrométrique et nanométrique. A l’aide d’une méthode originale, basée sur une description couche par couche du matériau, j’ai réalisé un programme informatique (MC1) rendant compte du cheminement des électrons élastiques dans les différentes couches du matériau. Le nombre d’électrons ressortant de la surface dépend de nombreux paramètres comme : la nature du matériau à étudier, l’énergie des électrons incidents, l’angle d’incidence, les angles de collection des analyseurs. De plus, je me suis intéressé à l’effet de la rugosité de la surface et j’ai démontré qu’elle joue un rôle déterminant sur l’intensité du pic élastique. Ensuite, grâce à l’association de la spectroscopie EPES et de la simulation Monte Carlo, j’ai déduit les modes de croissance de l’or sur substrat d’argent et de cuivre. Les effets de l’arrangement atomique et des pertes énergétiques de surfaces ont ensuite été étudiés. Pour cela, une deuxième simulation MC2 tenant compte de ces deux paramètres a été réalisée permettant d’étudier les surfaces à l’échelle nanométriques. Ces paramètres jusqu’alors non pris en compte dans notre simulation MC1, joue un rôle essentiel sur l’intensité élastique. Ensuite, j’ai obtenu une formulation simple et exploitable pour l’interprétation des résultats obtenus par la simulation MC2 pour un analyseur RFA. Afin de valider, les différents résultats de la simulationMC2, j’ai réalisé des surfaces de silicium nanostructurées, à l’aide de masques d’oxyde d’alumine réalisés par voie électrochimique. J’ai pu créer des nano-pores par bombardement ionique sous ultravide sur des surfaces de silicium. Afin de contrôler la morphologie de la surface, j’ai effectué de l’imagerie MEB ex-situ. La simulation Monte Carlo développée associée aux résultats EPES expérimentaux permet d’estimer la profondeur, le diamètre et la morphologie des pores sans avoir recours à d’autres techniques ex-situ.Cette simulation MC2 permet de connaître la surface étudiée à l’échelle nanométrique.