1. Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
- Author
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Chen, J. -H., Autès, G., Alem, N., Gargiulo, F., Gautam, A., Linck, M., Kisielowski, C., Yazyev, O. V., Louie, S. G., and Zettl, A.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed Matter - Materials Science - Abstract
Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.
- Published
- 2014
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