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In this paper, we report on X-ray transition-edge sensor (TES) microcalorimeters optimized to have the best possible energy resolution for a limited energy range for the incoming X-rays, such as an energy resolution of 0.3 eV full width half maximum (FWHM) for energies up to $$\approx 0.8\,{\mathrm{keV}}$$ as is desirable for one of the Lynx X-ray Microcalorimeter subarrays. The test array we have fabricated has $$60\times 60$$ sensors on a pitch of $$50\,\upmu {\mathrm{m}}$$, and has $$46\times 46\,\upmu {\mathrm{m}}^2$$ absorbers that are one micrometer thick. We have measured a spectral energy resolution of the same device using 3 eV photons delivered through an optical fiber. For the one-photon 3 eV line, we have obtained an energy resolution of 0.25 eV FWHM, which is consistent with the estimated performance based on the signal size and noise. Further measurements will determine how the energy resolution degrades with energy. Based upon measurements of the TES transition characteristics, it appears that this level of energy resolution should be achievable up to 0.5 keV, and the performance will then gradually degrade to the measured energy resolution of around 2.3 eV at 1.5 keV. In this paper, we describe the full design and characterization of this detector, and discuss the performance limits of pixels designs like this.

We report on the development of multi-absorber transition edge sensors (TESs), referred to as hydras. A hydra consists of multiple x-ray absorbers each with a different thermal conductance to a TES. Position information is encoded in the pulse shape. With some trade-off in performance, hydras enable very large format arrays without the prohibitive increase in bias and read-out components associated with arrays of individual TESs. Hydras are under development for the next generation of space telescope such as Lynx. Lynx is a NASA concept under study that will combine a < 1 arcsecond angular resolution optic with 100,000-pixel microcalorimeter array with energy resolution of deltaE_FWHM ~ 3 eV in the soft x-ray energy range. We present first results from hydras with 25-pixels for Lynx. Designs with absorbers on a 25 micron and 50 micron pitch are studied. Arrays incorporate, for the first time, microstrip buried wiring layers of suitable pitch and density required to readout a full-scale Lynx array. The resolution from the coadded energy histogram including all 25-pixels was deltaE_FWHM = 1.66+/-0.02 eV and 3.34+/-0.06 eV at an energy of 1.5 keV for the 25 micron and 50 micron absorber designs respectively. Position discrimination is demonstrated from parameterization of the rise-time., 7 pages, 5 figures. Low Temperature Detectors 18 Conference, Milan Italy

Future astrophysics missions such as the Lynx X-ray Microcalorimeter will comprise a very large array of X-ray microcalorimeters with greater than 100 000 pixels. One of the major challenges associated with the realization of large format arrays is the fabrication of high-density, high-yield, superconducting wiring between the pixels of the array. An attractive way to overcome this challenge is to use buried layers of multilayer wiring. Here we report on the fabrication of prototype arrays of magnetically coupled microcalorimeters (MMCs) using multiple niobium layers of buried wiring. In order to successfully scale MMCs to large arrays, so that the stray inductance of the wiring is sufficiently low and the sensor meander coil inductance is sufficiently high, the meander coil pitch is decreased. We have investigated linewidths as narrow as 400 nm. Fabricated devices have demonstrated high critical currents of 30 mA for the narrowest pitch.

We describe a small-scale demonstration of an X-ray microcalorimeter using metallic magnetic calorimeters (MMCs) that consist of superconducting meander-shaped sensor coils with very fine pitches. These devices are being developed for potential future astrophysics missions, such as Lynx. Because Lynx requires more than 100 000 pixels on a pitch of around 50 μm, the pixels and array designs are challenging to fabricate. We have fabricated prototype superconducting Nb meander coils with pitches of 0.8, 1.2, 1.6, and 5.0 μm to determine the most optimal geometry for coupling the MMC magnetization signal to the SQUIDs used to read them out. The Nb sensor coils and microstrip wiring are buried beneath the surface of a planarized silicon wafer. There are four buried Nb layers, and these are connected through superconducting Nb vias. We have observed a large critical current of ~ 30 mA for pixels with the finest pitch meander, which have a Nb width of 0.4 μm. We have characterized each pixel geometry from the magnetization, heat capacity, and thermal conductance measurements. The preliminary measured energy resolution from pixels in these geometries is also discussed.

Lynx is an x-ray telescope, one of four large satellite mission concepts currently being studied by NASA to be a flagship mission. One of Lynx's three instruments is an imaging spectrometer called the Lynx x-ray microcalorimeter (LXM), an x-ray microcalorimeter behind an x-ray optic with an angular resolution of 0.5 arc sec and ∼2 m2 of area at 1 keV. The LXM will provide unparalleled diagnostics of distant extended structures and, in particular, will allow the detailed study of the role of cosmic feedback in the evolution of the Universe. We discuss the baseline design of LXM and some parallel approaches for some of the key technologies. The baseline sensor technology uses transition-edge sensors, but we also consider an alternative approach using metallic magnetic calorimeters. We discuss the requirements for the instrument, the pixel layout, and the baseline readout design, which uses microwave superconducting quantum interference devices and high-electron mobility transistor amplifiers and the cryogenic cooling requirements and strategy for meeting these requirements. For each of these technologies, we discuss the current technology readiness level and our strategy for advancing them to be ready for flight. We also describe the current system design, including the block diagram, and our estimate for the mass, power, and data rate of the instrument.

The REgolith X-ray Imaging Spectrometer (REXIS) instrument on board NASA's OSIRIS-REx mission to the asteroid Bennu is a Class-D student collaboration experiment designed to detect fluoresced X-rays from the asteroid's surface to measure elemental abundances. In July and November 2019 REXIS collected ~615 hours of integrated exposure time of Bennu's sun-illuminated surface from terminator orbits. As reported in Hoak et al. (2021), the REXIS data do not contain a clear signal of X-ray fluorescence from the asteroid, in part due to the low incident solar X-ray flux during periods of observation. To support the evaluation of the upper limits on the detectable X-ray signal that may provide insights for the properties of Bennu's regolith, we present an overview of the REXIS instrument, its operation, and details of its in-flight calibration on astrophysical X-ray sources. This calibration includes the serendipitous detection of the transient X-ray binary MAXI J0637-430 during Bennu observations, demonstrating the operational success of REXIS at the asteroid. We convey some lessons learned for future X-ray spectroscopy imaging investigations of asteroid surfaces., Comment: 36 pages, 18 figures, accepted for publication in Space Science Reviews

One option for the detector technology to implement the Lynx x-ray microcalorimeter (LXM) focal plane arrays is the metallic magnetic calorimeter (MMC). Two-dimensional imaging arrays of MMCs measure the energy of x-ray photons by using a paramagnetic sensor to detect the temperature rise in a microfabricated x-ray absorber. While small arrays of MMCs have previously been demonstrated that have energy resolution better than the 3 eV requirement for LXM, we describe LXM prototype MMC arrays that have 55,800 x-ray pixels, thermally linked to 5688 sensors in “hydra” configurations, and that have sensor inductance increased to avoid signal loss from the stray inductance in the large-scale arrays when the detectors are read out with microwave superconducting quantum interference device multiplexers, and that use multilevel planarized superconducting wiring to provide low-inductance, low-crosstalk connections to each pixel. We describe the features of recently tested MMC prototype devices and simulations of expected performance in designs opti- mized for the three subarray types in LXM.

Analog & digital circuits implemented in a dual threshold voltage (VT) p-channel organic technology are presented. The dual VT organic technology is compatible with large-area and mechanically flexible substrates due to its low processing temperature (≤ 95°C) and scalable patterning techniques. We demonstrate the first analog & digital organic integrated circuits produced by a dual-gate metal process. The analog circuits are powered by a 5-V supply and include a differential amplifier and a two-stage uncompensated operational amplifier (op-amp). A dynamic comparator is measured to have an input offset voltage of 200 mV and latching time of 119 ms. Both the comparator and the op-amp dissipate 5 nW or less. Area-minimized digital logic is presented. Inverters powered by a 3-V supply were measured to have positive noise margins and consumed picowatts of power. An 11-stage ring oscillator, also powered by a 3-V supply, swings near rail to rail at 1.7 Hz. These results demonstrate dual threshold voltage process feasibility for large-area flexible mixed-signal organic integrated circuits.

A fully photolithographic dual threshold voltage (VT) organic thin-film transistor (OTFT) process suitable for flexible large-area integrated circuits is presented. The nearroom-temperature (

The effects of bias stress in integrated pentacene organic transistors are studied and modeled for different stress conditions. It is found that the effects of bias stress can be expressed in terms of the shift in applied gate voltage ?V for a given current. An empirical equation describing ?V in terms of different gate and drain bias stress measurements and stress times is presented and verified. In the measured devices, ?V saturates at 14 V, independent of the gate bias-stress condition. A model based on carrier trapping rate equation that accounts for this ?V saturation is developed. The model suggests that the ?V saturation is due to the small density of traps compared to the channel carrier density.

United States. National Aeronautics and Space Administration. Strategic Astrophysics Technology Program (Grant NNX12AF22G)

The Si substrate of GaN-on-Si wafers offers new opportunities to increase the functionality and performance of nitride-based devices. This paper will review three examples of these new devices/systems. First, GaN-on-Si substrates allow the on-chip heterogeneous integration of GaN and Si electronics. Second, the easy removal of the Si substrate through dry or wet etching gives access to the N-face of the GaN layer, and all the new device structures that this orientation enables. Finally, the use of Si substrates for the growth of GaN high voltage switches makes the cost of these devices competitive with Si devices, and the total or partial etch of Si brings a new degree of freedom to increase the breakdown and performance of GaN transistors.

For the first time, we demonstrate control of organic thinfilm transistor's (OTFT) threshold voltage (V T ) by modifying the gate work function. We present a near-room-temperature, fully lithographic process to fabricate integrated pentacene dual V T OTFTs suitable for large-area and flexible mixed signal circuits. Platinum and aluminum are used as the gate metals for the high V T (more depletion-like) and low V T (more enhancement-like) p-channel devices, respectively. The availability of a high V T device enables area-efficient zero-VGS current source loads. We demonstrate positive noise margin inverters which use pico Watts of power and a 3 V supply. Compared to a single V T implementation, the dual V T inverter occupies an area that is 30x smaller, and is 17x faster. These results show that p-channel only organic technologies can produce functional and low-power circuits without integrating a complementary device.

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Electronic energy disorder associated within amorphous and polycrystaline molecular organic thin film structures strongly affects the macroscopic observable behavior of organic field effect transistors (OFET) and poses practical challenges to implementing OFET circuits. It has been convenient to ignore the detailed physical processes associated with this disorder and model OFET behavior as equivalent to silicon FETs, but such simplifications limit our ability to develop integrated circuit technology as they fail to predict the true integrated OFET behavior. This talk will highlight the evolution of the organic electronic circuit technology and the challenges that lay ahead, emphasizing the need for physically accurate models of device behavior as the cornerstone of any future circuit advancements.