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Applying a voltage to a semiconductor sample generates a current-induced electron spin polarization (CISP). Using an ultrafast mode-locked laser and lock-in detection scheme, we measure CISP on an indium gallium arsenide epilayer via Faraday rotation and extract the spin generation rate. While the measured spin polarization initially increases linearly with electric field as observed in previous work, larger applied voltages lead to a decreasing spin generation rate. We show that we can recover the linear dependence of spin generation rate with electric field even at larger applied voltages by modifying the applied voltage waveform to reduce heating and multiplying by an appropriate correction factor. Future CISP studies can utilize this technique to investigate CISP under larger applied electric fields.