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A highly selective and sensitive EGFET-pH sensor based on composite TiO2–PANI had been developed in this work. A sol-gel titanium dioxide (TiO2) and the composite of TiO2 with semiconducting polyaniline (PANI) were deposited using a simple spin-coating method on an indium tin oxide (ITO) substrate. The films have been explored as a sensing electrode (SE) of extended gate field-effect transistor (EGFET) for pH applications in the range of pH 2 to 12. The pH sensitivities between TiO2, TiO2–PANI bilayer composite, and TiO2–PANI composite thin films were discussed. Among these, the TiO2–PANI composite thin film showed a super-Nernstian behavior with high sensitivity of 66.1 mV/pH and linearity of 0.9931; good repeatability with a standard deviation of 0.49%; a low hysteresis value of 3 mV; and drift rates of 4.96, 5.54, and 3.32 mV/h in pH 4, 7, and 10, respectively, for 6 h. Upon applying the TiO2–PANI composite as the SE for nitrate measurement, low sensitivity of 12.9 mV/dec was obtained, indicating that this film is a highly selective sensing electrode as a pH sensor. The surface morphology and crystallinity of the thin films were also discussed. [ABSTRACT FROM AUTHOR]

Titanium dioxide (TiO2) thin films were applied as the sensing membrane of an extended-gate field-effect transistor (EGFET) pH sensor. TiO2 thin films were deposited by spin coating method and the influences of the spin speed and spin duration on the pH sensing behavior of TiO2 thin films were investigated. The spin coated TiO2 thin films were connected to commercial metal-oxide-semiconductor field-effect transistor (MOSFET) to form the extended gates and the MOSFET was integrated in a readout interfacing circuit to complete the EGFET pH sensor system. For the spin speed parameter investigation, the highest sensitivity was obtained for the sample spun at 3000 rpm at a fixed spinning time of 60 s, which was 60.3 mV/pH. The sensitivity was further improved to achieve 68 mV/pH with good linearity of 0.9943 when the spin time was 75 s at the speed of 3000 rpm. [ABSTRACT FROM AUTHOR]

Titanium dioxide (TiO2) thin films were sputtered by radio frequency (RF) magnetron sputtering method and have been employed as the sensing membrane of an extended gate field effect transistor (EGFET) for pH sensing detection application. The TiO2 thin films were deposited onto indium tin oxide (ITO) coated glass substrates at room temperature and 200°C, respectively. The effect of deposition temperature on thin film properties and pH detection application was analyzed. The TiO2 samples used as the sensing membrane for EGFET pH-sensor and the current-voltage (I-V), hysteresis, and drift characteristics were examined. The sensitivity of TiO2 EGFET sensing membrane was obtained from the transfer characteristic (I-V) curves for different substrate heating temperatures. TiO2 thin film sputtered at room temperature achieved higher sensitivity of 59.89 mV/pH compared to the one deposited at 200°C indicating lower sensitivity of 37.60 mV/pH. Moreover the hysteresis and the drift of TiO2 thin film deposited at room temperature showed lower values compared to the one at 200°C. We have also tested the effect of operating temperature on the performance of the EGFET pH-sensing and found that the temperature effect was very minimal. [ABSTRACT FROM AUTHOR]