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Your search keyword '"Halindintwali, S."' showing total 9 results
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3. Thermally Induced Nano-Structural and Optical Changes of nc-Si:H Deposited by Hot-Wire CVD

Author

Muller TFG, Knoesen D, Halindintwali S, Arendse CJ, Malgas GF, Oliphant CJ, Motaung DE, and Mwakikunga BW

Subjects
Hot-wire CVD, Quantum size effects, Nano-crystallite, Optical band gap, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

Abstract We report on the thermally induced changes of the nano-structural and optical properties of hydrogenated nanocrystalline silicon in the temperature range 200–700 °C. The as-deposited sample has a high crystalline volume fraction of 53% with an average crystallite size of ~3.9 nm, where 66% of the total hydrogen is bonded as ≡Si–H monohydrides on the nano-crystallite surface. A growth in the native crystallite size and crystalline volume fraction occurs at annealing temperatures ≥400 °C, where hydrogen is initially removed from the crystallite grain boundaries followed by its removal from the amorphous network. The nucleation of smaller nano-crystallites at higher temperatures accounts for the enhanced porous structure and the increase in the optical band gap and average gap.

Published
2009
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8. Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

Author

Halindintwali, S., Knoesen, D., Rath, J.K., Schropp, R.E.I., Gordijn, A., Nanophotonics, Dep Natuurkunde, and Sub Physics of devices begr 1/1/17

Subjects
inorganic chemicals, technology, industry, and agriculture
Abstract

Nanostructured thin silicon-based films have been deposited using the hot-wire chemical vapour deposition (HWCVD) technique at the University of the Western Cape. A variety of techniques including optical and infrared spectroscopy, Raman scattering spectroscopy, X-rays diffraction (XRD) and transmission electron microscopy (TEM) have been used for characterisation of the films. The electrical measurements show that the films have good values of photoresponse, and the photocurrent remains stable after several hours of light soaking. This contribution will discuss the characteristics of the hydrogenated nanocrystalline silicon thin films deposited using increased process chamber pressure at a fixed hydrogen dilution ratio in monosilane gas.

Published
2009

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