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We show how intrinsic material properties modify light transmission through subwavelength hole arrays on thin metallic films in the THz regime. We compare the temperature-dependent transmittance of Au films and MgB$_{2}$ films. The experimental data is consistent with analytical calculations, and is attributed to the temperature change of the conductivity of both films. The transmission versus conductivity is interpreted within the open resonator model when taking the skin depth into consideration. We also show that the efficiency of this temperature control depends on the ratio of the transmission peak frequency to the superconducting energy gap in MgB$_{2}$ films., Comment: 6 pages, 6 figures

Ultrathin MgB2 superconducting films with a thickness down to 7.5 nm are epitaxially grown on (0001) Al2O3 substrate by hybrid physical-chemical vapor deposition method. The films are phase-pure, oxidation-free and continuous. The 7.5 nm thin film shows a Tc(0) of 34 K, which is so far the highest Tc(0) reported in MgB2 with the same thickness. The critical current density of ultrathin MgB2 films below 10 nm is demonstrated for the first time as Jc ~ 10^6 A cm^{-2} for the above 7.5 nm sample at 16 K. Our results reveal the excellent superconducting properties of ultrathin MgB2 films with thicknesses between 7.5 and 40 nm on Al2O3 substrate., Comment: 7 pages, 4 figures, 2 tables

In this paper we report a new sol-gel method for the fabrication of MgB2 films. Polycrystalline MgB2 films were prepared by spin-coating a precursor solution of Mg(BH_4)_2 diethyl ether on (001)Al2O3 substrates followed with annealing in Mg vapor. In comparison with the MgB2 films grown by other techniques, our films show medium qualities including a superconducting transition temperature of Tc ~ 37 K, a critical current density of Jc(5 K, 0 T) ~ 5 {\times} 10^6 A cm^{-2}, and a critical field of H_{c2}(0) ~ 19 T. Such a sol-gel technique shows potential in the commercial fabrication of practically used MgB2 films as well as MgB2 wires and tapes., Comment: 8 pages, 5 figures

We have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong nonlinearity of the Hall effect and magnetoresistance have been found in clean samples, and they decrease gradually with the increase of disorders or temperature. By fitting the data to the theoretical model based on the Boltzmann equation and ab initio calculations for a four-band system, for the first time, we derived the scattering rates of these four bands at different temperatures and magnitude of disorders. Our method provides a unique way to derive these important parameters in multiband systems., Comment: 4 pages, 4 figures

The longitudinal resistivity (rho_{xx}) and transverse resistivity (rho_{xy}) of MgB2 thin films in the mixed state were studied in detail. We found that the temperature dependencies of rho_{xx} and \rho_{xy} at a fixed magnetic field (H) satisfy the scaling law of $\rho_{xy}=A\rho_{xx}^\beta$, where the exponent beta varies around 2.0 for different fields. In the low field region (below 1T), beta maintains a constant value of 2.0 due to the weak pinning strength of the vortices, mainly from the superfluid of the pi band. When H>1T, beta drops abruptly to its lowest value at about 2T because of the proliferation of quasiparticles from the pi-band and, hence, the motion of the vortices from the superfluid of the sigma-band dominates the dissipation. As the field is increased further, the vortex pinning strength is weakened and beta increases monotonically towards 2.0 at a high field. All the results presented here are in good agreement with the expectation of the vortex physics of a multi-band superconductor.