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Photovoltaics is amongst the most important technologies for renewable energy sources, and plays a key role in the development of a society with a smaller environmental footprint. Key parameters for solar cells are their energy conversion efficiency, their operating lifetime, and the cost of the energy obtained from a photovoltaic system compared to other sources. The optimization of these aspects involves the exploitation of new materials and development of novel solar cell concepts and designs. Both theoreticalmodeling and characterization of such devices require a comprehensive view including all scales from the atomic to the macroscopic and industrial scale. The different length scales of the electronic and optical degrees of freedoms specifically lead to an intrinsic need for multiscale simulation, which is accentuated in many advanced photovoltaics concepts including nanostructured regions. Therefore, multiscale modeling has found particular interest in the photovoltaics community, as a tool to advance the field beyond its current limits. In this article, we review the field of multiscale techniques applied to photovoltaics, and we discuss opportunities and remaining challenges.

The novel properties of nanoparticulate materials (NPM) and the rapid development of NPM based products have raised many unanswered questions and concerns by different stakeholders over its consequences for the environment and human health. These concerns have led to an increasing discussion in both the US and Europe about possible regulatory policies for NPM. In this article a comparative study of stakeholders' perceptions on regulatory policy issues with NPM in Europe is presented. It was found that industry wants to regulate this area if the scientific evidence demonstrates that NPM are harmful, but also that the regulatory bodies do not find it necessary at this point of time to regulate until scientific evidence demonstrates that NPM are harmful. This research therefore shows that there will most likely not be any regulatory interventions until there is an established and convincing scientific knowledge base demonstrating that NPM can be hazardous. It is furthermore discussed in this article the different roles and responsibilities of the stakeholders in financing the research required to establish the necessary level of fundamental scientific evidence. It was also found that the activity of the regulatory bodies on this issue differ between the European countries

We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires.

The development of methods to produce nanoparticles with unique properties via the aerosol route is progressing rapidly. Typical characterization techniques extract particles from the synthesis process for subsequent offline analysis, which may alter the particle characteristics. In this work, we use laser-vaporization aerosol mass spectrometry (LV-AMS) with 70-eV electron ionization for real-time, in-situ nanoparticle characterization. The particle characteristics are examined for various aerosol synthesis methods, degrees of sintering, and for controlled condensation of organic material to simulate surface coating/functionalization. The LV-AMS is used to characterize several types of metal nanoparticles (Ag, Au, Pd, PdAg, Fe, Ni, and Cu). The degree of oxidation of the Fe and Ni nanoparticles is found to increase with increased sintering temperature, while the surface organic-impurity content of the metal particles decreases with increased sintering temperature. For aggregate metal particles, the organic-impurity content is found to be similar to that of a monolayer. By comparing different equivalent-diameter measurements, we demonstrate that the LV-AMS can be used in tandem with a differential mobility analyzer to determine the compactness of synthesized metal particles, both during sintering and during material addition for surface functionalization. Further, materials supplied to the particle production line downstream of the particle generators are found to reach the generators as contaminants. The capacity for such in-situ observations is important, as it facilitates rapid response to undesired behavior within the particle production process. This study demonstrates the utility of real-time, in-situ aerosol mass spectrometric measurements to characterize metal nanoparticles obtained directly from the synthesis process line, including their chemical composition, shape, and contamination, providing the potential for effective optimization of process operating p

Nanotechnology gives us materials with enhanced or completely new properties. At the same time, inhalation of manufactured nano-objects has been related to an array of adverse biological effects. We characterized particle emissions, which occurred during maintenance of common metal nanoparticle generators and contrasted the properties of the emitted particles with those originally produced by the generators. A new approach using online aerosol mass spectrometry (AMS), for time-and size-resolved measurements of the particle chemical composition, was applied in combination with more conventional techniques for particle sampling and analysis, including electron microscopy. Emissions during maintenance work, in terms of mass and surface area concentration in the size range of 0.02-10 mu m, were dominated by large agglomerates (1-5 mu m). With AMS, we show that the particle composition depends on both generator type and maintenance task being performed and that the instrument can be used for highly time-resolved selective studies of metal nanoparticle emissions. The emitted agglomerates have a relatively high probability to be deposited in the lower respiratory tract, since the mean particle diameter coincided with a peak in the lung deposition curve. Each of these agglomerates consisted of a very high number (10(3)-10(5)/agglomerate) of nanometer-sized primary particles originating from the particle synthesis process. This made them possess large surface areas, one of the key properties in nanotoxicology. Similar agglomerates may be emitted in a wide range of processes when nanoparticles are manufactured or handled. The fate of such agglomerates, once deposited in the respiratory tract, is unknown and should therefore be considered in future particle toxicological studies. Our results highlight the importance of including micrometer-sized particles in exposure and emission assessments.

An ongoing discussion whether traditional toxicological methods are sufficient to evaluate the risks associated with nanoparticle inhalation has led to the emergence of Air-Liquid interface toxicology. As a step in this process, this study explores the evolution of particle characteristics as they move from the airborne state into physiological solution. Airborne gold nanoparticles (AuNP) are generated using an evaporation-condensation technique. Spherical and agglomerate AuNPs are deposited into physiological solutions of increasing biological complexity. The AuNP size is characterized in air as mobility diameter and in liquid as hydrodynamic diameter. AuNP:Protein aggregation in physiological solutions is determined using dynamic light scattering, particle tracking analysis, and UV absorption spectroscopy. AuNPs deposited into homocysteine buffer form large gold-aggregates. Spherical AuNPs deposited in solutions of albumin were trapped at the Air-Liquid interface but was readily suspended in the solutions with a size close to that of the airborne particles, indicating that AuNP:Protein complex formation is promoted. Deposition into serum and lung fluid resulted in larger complexes, reflecting the formation of a more complex protein corona. UV absorption spectroscopy indicated no further aggregation of the AuNPs after deposition in solution. The corona of the deposited AuNPs shows differences compared to AuNPs generated in suspension. Deposition of AuNPs from the aerosol phase into biological fluids offers a method to study the protein corona formed, upon inhalation and deposition in the lungs in a more realistic way compared to particle liquid suspensions. This is important since the protein corona together with key particle properties (e.g. size, shape and surface reactivity) to a large extent may determine the nanoparticle effects and possible translocation to other organs.

Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]

We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.

This paper describes and discusses a novel class for sustainable development at the faculty of engineering at Lund University, Sweden. Based on personal experience and student questionnaires, the study discusses applied pedagogical approaches (case study, role play, matrix approach) and suggests improvements to the structure of the class. The project is a student initiative, making student involvement and its effects on learning for sustainable development central topics of this paper, thereby challenging the notion of engineering students as passive receivers of education for sustainable development.

We demonstrate that the crystal structure of InAs nanowires can be controlled with nanowire diameter and growth temperature. At small diameters, the nanowires exhibit a wurtzite structure. As the diameter is increased, there is a crossover to the zinc blende structure. The crossover is less sharp at lower growth temperature and the crossover diameter decreases as the growth temperature is increased. We explain these results with classical nucleation theory. The strong diameter dependence is accounted for by including the Gibbs-Thomson effect in the chemical potential.

In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb

We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.

We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices.

Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect densities, this level of control could lead to bandgap engineering and novel electronic behaviour.

Planar growth of high-quality InAs/InSb heterostructure nanowires by metal-organic vapor-phase epitaxy was demonstrated. The nanowires are found to consists of two-segment structure with a narrow base diameter and a wide upper-segment diameter. The InAs crystal structures show a very low density of stacking faults and the interface of InAs and InSb is atomically sharp as the lattice-fringe separation to the interface changes at the interface. Point analysis of the InAs segment gives a 49.5 to 50.5 ratio (∓0.6) between indium and arsenic, with no trace of any other material. It is found that the difference in indium concentration in the particle from 30 to 67 atomic percent would lead to an increase of the particle diameter of 35%. The 40-nm-long InAs zinc blende segment is present below the InAs/InSb interface and is thus assumed to correspond to the gas-switching sequence from arsenic to TMSb.