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22 results on '"Dabiran, Amir"'

1. UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode

Author

Boukhicha, Mohamed, Tsang, Thomas Y., Giacomini, Gabriele, Dabiran, Amir M., and Cultrera, Luca

Subjects
Physics - Instrumentation and Detectors, Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high quantum efficiency, and minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies in the the range of hundreds of MHz. Here, we report on our first design and operational results on a Hybrid Photon Detector (HPD) that combines the high quantum efficiency of a Gallium Nitride (GaN) photocathode and the low noise characteristics of a Si-based Low-Gain Avalanche Diode (LGAD). This hybrid detection scheme has the potential to reach single-photon detection sensitivity with high quantum efficiency, low noise levels and capable of operating at hundreds of MHz repetition rates.

Published
2024

2. Scaling and High-Frequency Performance of AlN/GaN HEMTs

Author

Luo, Xi, Halder, Subrata, Curtice, Walter R., Hwang, James C. M., Chabak, Kelson D., Walker, Jr., Dennis E., and Dabiran, Amir M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 {\mu}m width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to increase with inverse gate length and independent of gate width. For the first time, output power and efficiency were reported at the high end of Xband, and were comparable to the best reported at 2 GHz and insensitive to gate length or width. These results suggest that the AlN/GaN HEMTs can be further scaled for even higher frequency and higher power performance.

Published
2017
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11. Electrical characterization of atomic layer deposited Al2O3/InN interfaces.

Author

Ye Jia, Dabiran, Amir M., and Singisetti, Uttam

Subjects
ATOMIC layer deposition, ALUMINUM oxide, THIN films, PHOTOELECTRON spectroscopy, HYDROBROMIC acid
Abstract

In this article, the authors report the electrical properties of atomic layer deposited Al2O3=InN interfaces evaluated by capacitance-voltage (C-V), current-voltage (I-V), and x-ray photoemission spectroscopy techniques. I-V characteristics show low leakage currents (300 pA=μm2) in the deposited dielectrics. However, C-V curves show that ex situ surface treatments with hydrochloric acid, ammonium sulfide, and hydrobromic acid has little effect on the surface electron accumulation layer, with an estimated interface state density over 4 x 1013=cm2. The effect of the surface treatments on valance band offset between Al2O3 and InN was also investigated. [ABSTRACT FROM AUTHOR]

Published
2016
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15. SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs

Author

CHABAK, KELSON D., primary, WALKER, DENNIS E., additional, CRESPO, ANTONIO, additional, TREJO, MANUEL, additional, KOSSLER, MAURICIO, additional, TETLAK, STEVE, additional, GILLESPIE, JAMES K., additional, FITCH, ROBERT C., additional, VIA, GLEN D., additional, DABIRAN, AMIR, additional, WOWCHAK, A.M., additional, and CHOW, P.P., additional

Published
2011
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16. Proton irradiation effects on AlN/GaN high electron mobility transistors

Author

Lo, C. F., primary, Chang, C. Y., additional, Chu, B. H., additional, Kim, H.-Y., additional, Kim, J., additional, Cullen, David A., additional, Zhou, Lin, additional, Smith, David. J., additional, Pearton, S. J., additional, Dabiran, Amir, additional, Cui, B., additional, Chow, P. P., additional, Jang, S., additional, and Ren, F., additional

Published
2010
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18. Improved Long-Term Thermal Stability At 350°C Of TiB2-Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors.

Author

Khanna, Rohit, Stafford, L., Pearton, S. J., Anderson, T. J., Ren, F., Kravchenko, I. I., Dabiran, Amir, Osinsky, A., Joon Yeob Lee, Kwan-Young Lee, and Jihyun Kim

Subjects
ELECTRONS, OHMIC contacts, METALS, SEMICONDUCTORS, CRYSTALS
Abstract

AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB2/Ti/Au source/drain Ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB2/Au or Ni/TiB2/Au) and subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au Ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based Ohmic metal and either Pt/Au, Ni/Au or Ni/TiB2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C. [ABSTRACT FROM AUTHOR]

Published
2007
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