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7 results on '"Chendong Zhu"'

1. Monitoring and Identification of Road Construction Safety Factors via UAV

Author

Chendong Zhu, Junqing Zhu, Tianxiang Bu, and Xiaofei Gao

Subjects
road construction, safety, unmanned, aerial, vehicle, convolutional neural network, Chemical technology, TP1-1185
Abstract

The safety of road construction is one of the most important concerns of construction managers for the following reasons: long-span construction operation, no fixed monitoring cameras, and huge impacts on existing traffic, while the managers still rely on manual inspection and a lack of image records. With the fast development of Unmanned Aerial Vehicle (UAV) and Artificial Intelligence (AI), monitoring safety concerns of road construction sites becomes easily accessible. This research aims to integrate UAVs and AI to establish a UAV-based road construction safety monitoring platform. In this study, road construction safety factors including constructors, construction vehicles, safety signs, and guardrails are defined and monitored to make up for the lack of image data at the road construction site. The main findings of this study include three aspects. First, the flight and photography schemes are proposed based on the UAV platform for information collection for road construction. Second, deep learning algorithms including YOLOv4 and DeepSORT are utilized to automatically detect and track safety factors. Third, a road construction dataset is established with 3594 images. The results show that the UAV-based monitoring platform can help managers with security inspection and recording images.

Published
2022
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2. Impact of scaling on the inverse-mode operation of SiGe HBTs

Author

Appaswamy, Aravind, Bellini, Marco, Wei-Min Mance Kuo, Peng Cheng, Jiahui Yuan, Chendong Zhu, Cressler, John D., Guofu Niu, and Josehp, Alvin J.

Subjects
Scaling laws (Statistical physics) -- Analysis, Silicon compounds -- Electric properties, Electric circuit analysis, Business, Electronics, Electronics and electrical industries
Abstract

The inverse mode performance of four distinct generations of SiGe HBTs is investigated and is found to improve impressively with generational scaling. Results show that the improved inverse mode performance with scaling would allow for improved design flexibility and could potentially be use to design novel circuits where speed is not the major driving factor.

Published
2007

3. An investigation of negative differential resistance and novel collector-current kink effects in SiGe HBTs operating at cryogenic temperatures

Author

Jiahui Yuan, Cressler, John D., Chendong Zhu, Yan Cui, Joseph, Alvin J., Guofu Niu, and Qingqing Liang

Subjects
Bipolar transistors -- Design and construction, Silicon compounds -- Electric properties, Silicon compounds -- Thermal properties, Germanium -- Electric properties, Germanium -- Thermal properties, Electric resistance -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

A detailed investigation of a new negative differential resistance (NDR) effect and a novel collector-current kink effect in cryogenically operated SiGe heterojunction bipolar transistors are presented. The results show that the additional drift current due to the charge accumulation induced by the enhanced positive feedback in heterojunction bipolar effect causes NDR effects.

Published
2007

4. Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs

Author

Jiahui Yuan, Guofu Niu, Marco Bellini, Wei-Min Lance Kuo, Peng Cheng, John D. Cressler, Alvin J. Joseph, A. Appaswamy, and Chendong Zhu

Subjects
Materials science, business.industry, Heterojunction bipolar transistor, Bipolar junction transistor, Direct current, Mode (statistics), Heterojunction, Electronic, Optical and Magnetic Materials, Silicon-germanium, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Current density, Scaling
Abstract

The inverse-mode operational regime of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) has to date been largely ignored and is typically dismissed as a viable possibility for circuit applications due to the general perception of its limited dc and ac performance capabilities. In this paper, the inverse-mode performance of four distinct generations of SiGe HBTs is investigated and is found to improve impressively with generational scaling. The physics behind these scaling-induced improvements is examined in detail using a combination of measurements and calibrated simulations. A novel lateral dependence of the inverse-mode base current is identified and is shown to potentially present new opportunities for even larger improvements in inverse-mode performance in SiGe HBTs. A record peak fT in inverse mode of 25 GHz is reported for a prototype fourth-generation device

Published
2007

5. CMOS reliability issues for emerging cryogenic Lunar electronics applications

Author

Laleh Najafizadeh, Chendong Zhu, R.M. Diestelhorst, G. Espinel, John D. Cressler, A. Ahmed, Tianbing Chen, and Bongim Jun

Subjects
Electron mobility, Materials science, business.industry, Space electronics, Transconductance, Heterojunction bipolar transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Condensed Matter Physics, Bicmos technology, Electronic, Optical and Magnetic Materials, Reliability (semiconductor), CMOS, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, Electronics, Electrical and Electronic Engineering, business
Abstract

We investigate the reliability issues associated with the application of CMOS devices contained within an advanced SiGe HBT BiCMOS technology to emerging cryogenic space electronics (e.g., down to 43 K, for Lunar missions). Reduced temperature operation improves CMOS device performance (e.g., transconductance, carrier mobility, subthreshold swing, and output current drive), as expected. However, operation at cryogenic temperatures also causes serious device reliability concerns, since it aggravates hot-carrier effects, effectively decreasing the inferred device lifetime significantly, especially at short gate lengths. In the paper, hot-carrier effects are demonstrated to be a stronger function of the device gate length than the temperature, suggesting that significant trade-offs between the gate length and the operational temperature must be made in order to ensure safe and reliable operation over typical projected mission lifetimes in these hostile environments.

Published
2006

6. SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics

Author

Guofu Niu, R. Krithivasan, Suheng Chen, Laleh Najafizadeh, Chendong Zhu, Chandradevi Ulaganathan, John D. Cressler, Alvin J. Joseph, Benjamin J. Blalock, and Yan Cui

Subjects
Materials science, Analogue electronics, business.industry, Range (statistics), Electrical engineering, Optoelectronics, Electronics, BiCMOS, business, Extreme temperature, Temperature coefficient, Voltage reference, Voltage
Abstract

We present the first investigation of the optimal implementation of SiGe BiCMOS precision voltage references for extreme temperature range applications (+120 degC to -180 degC and below). We have developed and fabricated two unique Ge profiles optimized specifically for cryogenic operation, and for the first time compare the impact of Ge profile shape on precision voltage reference performance down to -180 degC. Our best case reference achieves a 28.1 ppm/ degC temperature coefficient over +27 degC to -180 degC, more than adequate for the intended lunar electronics applications

Published
2006

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