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The deformation behavior of BCC metals is being investigated by x-ray microdiffraction measurements (mu XRD) for the purpose of characterizing the dislocation structure that results from uniaxial compression experiments. The high brilliance synchrotron source at the Advanced Light Source (Lawrence Berkeley National Lab) and the micron resolution of the focusing optics allow for the mapping of Laue diffraction patterns across a sample. These measurements are then analyzed in order to map the distribution of residual stresses in the crystal. An important findingis the observation of Laue spot "streaking," which indicates localized rotations in the lattice.These may represent an accumulation of same-sign dislocations. Theoretical modeling of the diffraction response for various slip systems is presented, and compared to experimental data. Preliminary results include orientation maps from a highly strained Ta bicrystal and a less highly strained Mo single crystal. The orientation maps of the bicrystal indicate a cell-like structure of dense dislocation walls. This deformation structure is consistent with previous OIM studies of the same crystal. The results suggest that mu XRD may be a particularly useful tool for microscale studies of deformation patterns in a multi-scale investigation of the mechanisms of deformation that ranges from macroscopic deformation tests to high resolution TEM studies of dislocation structures.

In the present paper the evolution of the dislocation structure during electromigration in different regions along the Al(Cu) interconnect line is considered. It is shown that plastic deformation increases in the regions close to cathode end of the interconnect line. A coupling between the dissolution, growth and re-precipitation of Al2Cu precipitates and the electromigration-induced plastic deformation of grains in interconnects is observed. Possible mechanism of the Cu doping effect on the improved electromigration resistance of the Al(Cu) interconnects is discussed.

Electromigration during accelerated testing can induce large scale plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during an in-situ electromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.