1. Non-destructive imaging of bulk electrical 'hidden' state switching in a 1T-TaS2 cryo-memory device
- Author
-
Burri, Corinna, Hua, Nelson, Sanchez, Dario Ferreira, Hu, Wenxiang, Bell, Henry G., Venturini, Rok, Huang, Shih-Wen, McConnell, Aidan G., Dizdarevic, Faris, Mraz, Anze, Svetin, Damjan, Lipovsek, Benjamin, Topic, Marko, Kazazis, Dimitrios, Aeppli, Gabriel, Grolimund, Daniel, Ekinci, Yasin, Mihailovic, Dragan, and Gerber, Simon
- Subjects
Condensed Matter - Strongly Correlated Electrons - Abstract
In transition metal dichalcogenides a plethora of emergent states arise from competing electron-electron and electron-phonon interactions. Among these, the non-volatile metallic 'hidden' state of 1T-TaS2 can be induced from its insulating equilibrium charge-density wave ground state using either optical or electrical pulses. Here we report in-operando micro-beam X-ray diffraction, fluorescence, and concurrent transport measurements, allowing us to spatially image the non-thermal hidden state induced by electrical switching of a 1T-TaS2 device. Our findings reveal that the electrically and optically switched hidden states are structurally equivalent. Additionally, we observe a bulk switching channel extending beyond the intergap space to partially underneath the electrodes, suggesting that the non-equilibrium phase is caused by a combination of charge flow and lattice response. Besides identifying strain propagation as an important factor for non-thermal switching of layered materials, our results illustrate the power of non-destructive, three-dimensional X-ray imaging for studying phase-change materials and devices.
- Published
- 2024