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2 results on '"Duerinckx, Filip"'

1. Integration Processes for nPERT Si Solar Cells Using Single Side Emitter Epitaxy and front Side Laser Doping.

Author

Kuzma-Filipek, Izabela, Recaman-Payo, Maria, Li, Yuandong, Hajjiah, Ali, Duerinckx, Filip, Cornagliotti, Emanuele, Castro, Angel Uruena De, Sharma, Aashish, Borgers, Tom, Russell, Richard, Tous, Loic, John, Joachim, Haslinger, Michael, Aleman, Monica, and Szlufcik, Jozef

Abstract

This work focuses on the fabrication of nPERT(Passivated Emitter, Rear Totally Diffused) devices incorporating an epitaxially grown single side rear-emitter. Such epi-nPERT cells are fabricated in a simplified way using the selectivity of the epitaxial deposition, which is obtained by a PECVD-SiOxlayer, that not only mask the front but also passivates the cell. The cell performance is studied in terms of: i) various front surface fields (FSF) applied prior to emitter epitaxy and ii) usage of laser doping as an alternative to laser ablation for a front contacting scheme. The results show: i) a clear relationship between the depth of the homogeneous FSF and its impact on the open circuit voltage of the devices, with a shallow FSF having the highest V OC loss due to laser damage and ii) laser doping on devices with a relatively deep diffused FSF giving 8 mV increase in V OC as compared to devices with ablated dielectrics and a V OC increase of almost 30 mV in case a shallow selective FSF is applied. This results in a best efficiency obtained so far for the epi nPERT devices of 21.6% (226 cm 2 ). [ABSTRACT FROM AUTHOR]

Published
2015
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2. Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy

Author

Jozef Szlufcik, Filip Duerinckx, Richard Russell, Izabela Kuzma Filipek, Jef Poortmans, Maria Recaman Payo, Sukhvinder Singh, Yuandong Li, Recamán Payo, María, Li, Yuandong, Russell, Richard, Singh, Sukhvinder, Kuzma Filipek, Izabela, DUERINCKX, Filip, Szlufcik, Jozef, and POORTMANS, Jef

Subjects
Technology, Materials science, Energy & Fuels, POLYSILICON, Materials Science, Materials Science, Multidisciplinary, 02 engineering and technology, Dielectric, Blanket, 010402 general chemistry, Epitaxy, 01 natural sciences, Physics, Applied, Passivating contact, Plating, Plating Bifacial solar cell, OPTIMIZATION, Common emitter, Science & Technology, Laser ablation, p-Type contact, Renewable Energy, Sustainability and the Environment, business.industry, Physics, Doping, PASSIVATING CONTACTS, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Bifacial solar cell, Homogeneous, METAL, Physical Sciences, SI SOLAR-CELLS, Selective epitaxy, Optoelectronics, RESISTIVITY, 0210 nano-technology, business, Layer (electronics), RESISTANCE
Abstract

This work evaluates the potential of selective epitaxy to mitigate the recombination losses at the p-type contact regions of plated bifacial n-type PERT cells. Following the growth of a 500 nm, 2.5 10(19) cm(-3) boron doped epitaxial layer at the emitter contact regions defined by laser ablation of the passivating dielectrics, both an increase in V-oc (+6 mV) and FF (+ 1% absolute) are measured in the final cells compared to the reference with a homogeneous diffused emitter. These results come with an average efficiency gain of 0.3 and 0.5% absolute for front and rear side illumination, respectively. If the diffused, blanket emitter in the passivated regions is replaced by a thicker, lowly doped epitaxial profile (3 mu m, 5 10(18) cm(-3)) to further reduce recombination, an additional rise in implied V-oc after metallization of 10 mV is estimated. This increase would be the result of a reduction in J(0,pass, emitter) (down to 6 fA/cm(2)) and J(0,plated, emitter) (down to 1967 fA/cm(2)).

Published
2020
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