400 results on '"Tsatsul’nikov, A. F."'
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2. Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates
3. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
4. Photonic-crystal waveguide for the second-harmonic generation
5. MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range
6. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
7. Optical Switches and Modulators for Integrated Optoelectronic Systems
8. Modelling Quantum Well Laser Diode Structures
9. MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applications
10. Resonance Bragg structure with double InGaN quantum wells
11. Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field
12. Formation of composite InGaN/GaN/InAlN quantum dots
13. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
14. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
15. Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions
16. Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix
17. Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen
18. InGaN nanoinclusions in an AlGaN matrix
19. Energy characteristics of excitons in structures based on InGaN alloys
20. Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD
21. Photoluminescence of localized excitons in InGan quantum dots
22. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
23. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
24. Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy
25. The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm
26. A study of carrier statistics in InGaN/Gan LED structures
27. Kinetics and inhomogeneous carrier injection in InGaN nanolayers
28. Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−x As matrix on a GaAs substrate
29. Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition
30. Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix
31. Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system
32. Structural and optical properties of InAs quantum dots in AlGaAs matrix
33. Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix
34. High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
35. Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures
36. The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
37. 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them
38. The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm
39. Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
40. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
41. Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
42. Mbe Growth, Structural and Optical Characterization of InAs/InGaAlAs Self-Organized Quantum Dots
43. MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots
44. Heteroepitaxial growth of InAs on Si: A new type of quantum dot
45. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
46. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
47. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
48. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition
49. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
50. Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
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