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Nanorods of erbium-doped zinc oxide (ZnO:Er) were fabricated using a hydrothermal method. One batch was prepared with and another one without constant ultraviolet (UV) irradiation applied during the growth. The nanorods were free-standing (FS) as well as deposited onto a fused silica glass substrate (GS). The goal was to study the atomistic aspects influencing the charge transport of ZnO nanoparticles, especially considering the differences between the FS and GS samples. We focused on the excitons; the intrinsic defects, such as zinc interstitials, zinc vacancies, and related shallow donors; and the conduction electrons. UV irradiation was applied for the first time during the ZnO:Er nanorod growth. This led to almost total exciton and zinc vacancy luminescence reduction, and the number of shallow donors was strongly suppressed in the GS samples. The effect was much less pronounced in the FS rods. Moreover, the exciton emission remained unchanged there. At the same time, the Er3+ content was decreased in the FS particles grown under constant UV irradiation while Er3+ was not detected in the GS particles at all. These phenomena are explained. [ABSTRACT FROM AUTHOR]

A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a link between technological conditions, GaN layer properties, and the concentration of gallium vacancies (VGa). Different correlations between technological parameters and VGa concentration were observed for layers grown from triethyl gallium (TEGa) and trimethyl gallium (TMGa) precursors. In case of TEGa, the formation of VGa was significantly influenced by the type of reactor atmosphere (N2 or H2), while no similar behaviour was observed for growth from TMGa. VGa formation was suppressed with increasing temperature for growth from TEGa. On the contrary, enhancement of VGa concentration was observed for growth from TMGa, with cluster formation for the highest temperature of 1100 °C. From the correlation of photoluminescence results with VGa concentration determined by VEPAS, it can be concluded that yellow band luminescence in GaN is likely not connected with VGa; additionally, increased VGa concentration enhances excitonic luminescence. The probable explanation is that VGa prevent the formation of some other highly efficient nonradiative defects. Possible types of such defects are suggested. [ABSTRACT FROM AUTHOR]

The glass‐ceramics (GC) of gadolinium aluminum gallium garnets with the expected composition of Gd3Al3Ga2O12:Ce and Gd3Al3Ga2O12:Ce,Be (GAGG:Ce and GAGG:Ce,Be, respectively) are fabricated by crystallization from the Gd2O3–Al2O3–Ga2O3–CeO2–SiO2–BeO (Gd:Ga:Al ratio is close to 3:2:3) glasses. The influence of Be2+ co‐doping (including doping level) on the luminescent properties of the GAGG is demonstrated. In particular, Be co‐doping results in the suppression of the Ce3+‐related radioluminescence (RL) and as a consequence, the light yield is lowered as well. The conclusion is made that Be2+ creates effective electron or hole trapping centers. [ABSTRACT FROM AUTHOR]

The influence of dislocation density on the transport properties of high electron mobility transistor (HEMT) structures is reported in this work. Experimental results, obtained on HEMT structures prepared in the same growth run on templates with different dislocation densities, are compared. However, the direct comparison of structures is complicated, since parallel parasitic currents through deeper parts of the heterostructure were observed in samples with lower dislocation density. To suppress this phenomenon, the addition of an AlGaN back barrier (BB) beneath the two dimensional electron gas (2DEG) channel is proposed and optimized and the most suitable design based on both modeling and experimental results is suggested. Subsequently, the comparison of electron mobility in 2DEG for structures with AlGaN BB and different dislocation densities was possible. We show experimentally that lowering the dislocation density considerably increases the electron mobility in 2DEG. It is shown that the dislocation density also has a significant influence on the Fermi level position in GaN. The presented results suggest that reduction of dislocation density can improve the performance of high-frequency GaN HEMT applications. [ABSTRACT FROM AUTHOR]

The performance of cerium-doped Y3Al5O12 (Ce3+:YAG) often depends on cerium solubility achievable in a particular preparation technology. This solubility is kinetically affected by the synthesis process which allows for Ce3+ solubility to be generally much higher in a polycrystalline material than in single crystals. This work presents Y3−xCexAl5O12 polycrystalline thin films deposited by spin-coating where cerium is substituted on yttrium sites in an interval of 3.3–25 at%. Up to a concentration of 18 at%, the samples remain single-phase, which is the highest Ce3+ doping level in YAG published so far. Absorption, excitation and emission photoluminescence spectra are presented. The photoluminescence decays of the samples containing up to 6 at% cerium are comparable in radiative lifetime to those of Ce3+:YAG single crystals having the cerium concentration limit over one order smaller. The cathodoluminescence of the samples and soft X-ray nanosecond pulse-excited decays are examined. The scintillation decays appear much faster with a 1/e decay time well below 10 ns compared to that of a Ce3+:YAG single crystal which is 140 ns. After further optimization of the microstructure and the overall scintillation yield, sol–gel prepared Ce3+:YAG thin films are promising candidates for application in fast SEM scintillation detectors, currently intensively investigated in the scintillator technology field. [ABSTRACT FROM AUTHOR]

InGaN/GaN multiple quantum well structures are studied as potential candidates for superfast scintillation detectors and show the leading decay time of around 1 ns and intense luminescence. Photoluminescence properties of these structures with quantum well (QW) numbers ranging from 10 to 60 are described and discussed. It is shown that with increased QW number, the luminescence efficiency of the whole structure increases due to the V-pits of a sufficient size suppressing non-radiative recombination. Suppression of the non-radiative recombination near dislocations is demonstrated by the cathodoluminescence measured at different acceleration voltages. The optimal V-pit size is found to be in the range from 200 to 300 nm, which is obtained for structures with 40 QWs. On the other hand, when the V-pit size exceeds the optimal value, the PL intensity decreases by strong V-pit coalescence, which is observed for structures with 60 QWs. For further increasing the active region thickness, which helps to enhance the detection efficiency of high-energy irradiation, it is necessary to find a way to control the V-pit size. Excitation–emission maps are measured to elucidate how efficiently the structures are excited depending on the light wavelength and the QW number. It is shown that the wavelength for most efficient excitations of InGaN/GaN QWs is 362 nm. With increasing number of QWs, their fast excitonic luminescence is considerably enhanced, whereas slow defect band luminescence is suppressed. Time-resolved measurements with soft X-ray excitation also support our conclusions, showing suppressed non-radiative recombination for structures with higher QW numbers. The fastest decay component increases from 0.25 ns for a structure with 10 QWs to 1.1 ns for a structure with 60 QWs. [ABSTRACT FROM AUTHOR]

Lead halide perovskite nanocrystals of the formula CsPbBr3 have recently been identified as potential time taggers in scintillating heterostructures for time-of-flight positron emission tomography (TOF-PET) imaging thanks to their ultrafast decay kinetics. This study investigates the potential of this material experimentally. We fabricated CsPbBr3 thin films on scintillating GGAG:Ce (Gd2.985Ce0.015Ga2.7Al2.3O12) wafer as a model structure for the future sampling detector geometry. We focused this study on the radioluminescence (RL) response of this composite material. We compare the results of two spin-coating methods, namely the static and the dynamic process, for the thin film preparation. We demonstrated enhanced RL intensity of both CsPbBr3 and GGAG:Ce scintillating constituents of a composite material. This synergic effect arises in both the RL spectra and decays, including decays in the short time window (50 ns). Consequently, this study confirms the applicability of CsPbBr3 nanocrystals as efficient time taggers for ultrafast timing applications, such as TOF-PET. [ABSTRACT FROM AUTHOR]

A huge acceleration of the yellow band defect luminescence (YB) with increasing Si and Ge doping concentration in GaN layers has been observed and studied. The donor doping concentrations in the n-type GaN varied from 5 × 1016 cm−3 to 1.5 × 1019 cm−3 for undoped, Si-doped, and Ge-doped samples. Consequently, the fastest component of the photoluminescence (PL) decay time curve accelerated from 0.9 ms to 40.3 ns, and the mean decay time from 20 ms to 260 ns with increasing doping concentration. We have proposed an explanation based on a theoretical model of donor-acceptor pair transition (DAP) and electron-acceptor (e-A0) recombination at higher dopant concentrations, which is supported by several measurement techniques as room-temperature radioluminescence (RL), PL measurements or thermally stimulated luminescence (TSL). Last but not least, we have shown a change in the morphology of samples with the increasing dopant concentration, especially 3D columns formation with the high level of Si-doping and its influence on the light extraction from the GaN layer. The paper shows an uncommon way of dealing with slow unwanted YB, which detriment the GaN luminescence properties. • Si and Ge doping of GaN may cause a huge acceleration of yellow band luminescence. • Steady-state photoluminescence intensity remains almost unchanged. • Donor-acceptor and electron-acceptor pair transitions explain the luminescence processes. • Highly Si-doped GaN growths in 3D columns, whereas Ge-doped remains smooth. • The light extraction is influenced by the morphology change. [ABSTRACT FROM AUTHOR]