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Lattice thermal conductivity (kL) is a crucial physical property of crystals with applications in thermal management, such as heat dissipation, insulation, and thermoelectric energy conversion. However, accurately and rapidly determining kL poses a considerable challenge. In this study, we introduce an formula that achieves high precision (mean relative error=8.97%) and provides fast predictions, taking less than one minute, for kL across a wide range of inorganic binary and ternary materials. Our interpretable, dimensionally aligned and physical grounded formula forecasts kL values for 4,601 binary and 6,995 ternary materials in the Materials Project database. Notably, we predict undiscovered high kL values for AlBN2 (kL=101 W/ m/ K) and the undetectedlow kL Cs2Se (kL=0.98 W/ m/ K) at room temperature. This method for determining kL streamlines the traditionally time-consuming process associated with complex phonon physics. It provides insights into microscopic heat transport and facilitates the design and screening of materials with targeted and extreme kL values through the application of phonon engineering. Our findings offer opportunities for controlling and optimizing macroscopic transport properties of materials by engineering their bulk modulus, shear modulus, and Gruneisen parameter.

High thermoelectric properties are associated with the phonon-glass electron-crystal paradigm. Conventional wisdom suggests that the optimal bandgap of semiconductor to achieve the largest power factor should be between 6 and 10 kbT. To address challenges related to the bipolar effect and temperature limitations, we present findings on Zintl-type TlAgI2, which demonstrates an exceptionally low lattice thermal conductivity of 0.3 W m-1 K-1 at 300 K. The achieved figure of merit (ZT) for TlAgI2, featuring a 1.55 eV bandgap, reaches a value of 2.20 for p-type semiconductor. This remarkable ZT is attributed to the existence of extended antibonding states Ag-I in the valence band. Furthermore, the bonding hierarchy, influencing phonon anharmonicity, and coordination bonds, facilitating electron transfer between the ligand and the central metal ion, significantly contribute to electronic transport. This finding serves as a promising avenue for the development of high ZT materials with wide bandgaps at elevated temperatures.

Efficient and precise calculations of thermal transport properties and figure of merit, alongside a deep comprehension of thermal transport mechanisms, are essential for the practical utilization of advanced thermoelectric materials. In this study, we explore the microscopic processes governing thermal transport in the distinguished crystalline material Tl$_9$SbTe$_6$ by integrating a unified thermal transport theory with machine learning-assisted self-consistent phonon calculations. Leveraging machine learning potentials, we expedite the analysis of phonon energy shifts, higher-order scattering mechanisms, and thermal conductivity arising from various contributing factors like population and coherence channels. Our finding unveils an exceptionally low thermal conductivity of 0.31 W m$^{-1}$ K$^{-1}$ at room temperature, a result that closely correlates with experimental observations. Notably, we observe that the off-diagonal terms of heat flux operators play a significant role in shaping the overall lattice thermal conductivity of Tl$_9$SbTe$_6$, where the ultralow thermal conductivity resembles that of glass due to limited group velocities. Furthermore, we achieve a maximum $ZT$ value of 3.17 in the $c$-axis orientation for \textit{p}-type Tl$_9$SbTe$_6$ at 600 K, and an optimal $ZT$ value of 2.26 in the $a$-axis and $b$-axis direction for \textit{n}-type Tl$_9$SbTe$_6$ at 500 K. The crystalline Tl$_9$SbTe$_6$ not only showcases remarkable thermal insulation but also demonstrates impressive electrical properties owing to the dual-degeneracy phenomenon within its valence band. These results not only elucidate the underlying reasons for the exceptional thermoelectric performance of Tl$_9$SbTe$_6$ but also suggest potential avenues for further experimental exploration.

We study the phase transition behavior of the ferroelectric BaTi$_{0.8}$Zr$_{0.2}$O$_3$ in the paraelectric region. The temperature dependencies of thermal, polar, elastic and dielectric properties indicate the presence of local structures above the paraelectric-ferroelectric transition temperature Tc = 292 K. The non-zero remnant polarization is measured up to a characteristic temperature T* ~350 K, which coincides with the temperature where the dielectric constant deviates from Curie-Weiss law. Resonant Piezoelectric Spectroscopy shows that DC field-cooling above Tc using fields smaller than the coercive field leads to an elastic response and remnant piezoelectricity below T*, which likely corresponds to the coherence temperature associated with polar nanostructures in ferroelectrics. The observed remnant effect is attributed to the reorientation of polar nanostructures above Tc., Comment: Accepted version in Applied Physics Letters. 13 pages; 4 figures. (Supp Material in version 1)

Noble gas atoms such as Kr and Xe are byproducts of nuclear fission in nuclear plants. How to trap and confine these volatile even radioactive gases is particularly challenging. Recent studies have shown that they can be trapped in nanocages of ultrathin silica. Here, we exhibit with self-consistent phonon theory and four-phonon (4ph) scattering where the adsorption of noble gases results in an anomalous increase in lattice thermal conductivity, while the presence of Cu atoms doping leads to a reduction in lattice thermal conductivity. We trace this behavior in host-guest 2D silica to an interplay of tensile strain, rattling phonon modes, and redistribution of electrons. We also find that 4ph scatterings play indispensable roles in the lattice thermal conductivity of 2D silica. Our work illustrates the microscopic heat transfer mechanism in 2D silica nanocages with the immobilization of noble gas atoms and inspires further exploring materials with the kagome and glasslike lattice thermal conductivity., Comment: 7 pages, 4 figures

Sb and Bi monolayers, as single-elemental ferroelectric materials with similar atomic structure, hold intrinsic piezoelectricity theoretically, which makes them highly promising for applications in functional nano-devices such as sensors and actuators. Here, using first-principles calculations, we systematically explore the piezoelectric response of Sb and Bi monolayers. Our findings reveal that Sb exhibits a negative piezoelectric response, whereas Bi displays a positive one. This discrepancy is attributed to the dominant role of different atomic internal distortions (internal-strain terms) in response to applied strain. Further electron-density distribution analysis reveals that the atomic bonding in Sb tends to be covalent, while the atomic bonding in Bi leans more towards ionic. Compared to the Sb monolayer, the Bi monolayer is distinguished by its more pronounced lone-pair orbitals electrons and associated larger Born effective charges. The Coulomb repulsions between lone-pair orbitals electrons and the chemical bonds lead to the Bi monolayer possessing more prominent atomic folds and, consequently, more significant atomic distortion in the z-direction under strain. These differences result in a considerable difference in internal-strain terms, ultimately leading to the reversed piezoelectric response between Sb and Bi monolayers. The present work provides valuable insights into the piezoelectric mechanism of 2D ferroelectric materials and their potential applications in nano-electronic devices.

We investigate the influence of three- and four-phonon scattering, perturbative anharmonic phonon renormalization, and off-diagonal terms of coherent phonons on the thermal conductivity of CsPbBr3 phase change perovskite, by using advanced implementations and first-principles simulations. Our study spans a wide temperature range covering the entire structural spectrum. Notably, we demonstrate that the interactions between acoustic and optical phonons result in contrasting trends of phonon frequency shifts for the high-lying optical phonons in orthorhombic and cubic CsPbBr3 as temperature varies. Our findings highlight the significance of wave-like tunneling of coherent phonons in ultralow and glass-like thermal conductivity in halide perovskites., Comment: 9 pages, 4 figures

One of the current challenges in nanoscience is tailoring phononic devices, such as thermal regulators and thermal computing. This has long been a rather elusive task because the thermal-switching ratio is not as high as electronic analogs. Mapping from a topological kirigami assembly, nitrogen-doped porous graphene metamaterials on the nanoscale are inversely designed with a thermal-switching ratio of 27.79, which is more than double the value of previous work. We trace this behavior to the chiral folding-unfolding deformation, resulting in a metal-insulator transition. This study provides a nanomaterial design paradigm to bridge the gap between kinematics and functional metamaterials that motivates the development of high-performance thermal regulators.

Compound phases often display properties that are symmetry-forbidden relative to their nominal, average crystallographic symmetry, even if extrinsic reasons (defects, strain, imperfections) are not apparent. Here, we investigate macroscopic inversion symmetry breaking in nominally centrosymmetric materials and measure Resonant Piezoelectric Spectroscopy (RPS) and Resonant Ultrasound Spectroscopy (RUS) in 15 compounds, 18 samples, and 21 different phases, including unpoled ferroelectrics, paraelectrics, relaxors, ferroelastics, incipient ferroelectrics, and isotropic materials with low defect concentrations, i.e. NaCl,cfused silica, and CaF2. We exclude the flexoelectric effect as a source of the observed piezoelectricity yetcobserve piezoelectricity in all nominally cubic phases of these samples. By scaling the RPS intensities with those of RUS, we calibrate the effective piezoelectric coefficients using single crystal quartz as standard. Using this scaling we determine the effective piezoelectric modulus in nominally non-piezoelectric phases, finding that the "symmetry-forbidden" piezoelectric effect ranges from 1 pm/V to 10E-5 pm/V. The values for unpoled ferroelectric phases are only slightly higher than those in the paraelectric phase of the same material. The lowest coefficients are well below the detection limit of conventional piezoelectric measurements and demonstrate RPS as an ultra-highly sensitive method to measure piezoelectricity. We suggestt hat symmetry-breaking piezoelectricity in nominally centrosymmetric materials and disordered, unpoled ferroelectrics is ubiquitous.

Two-dimensional materials with ferroelectric properties break the size effect of conventional ferroelectric materials and unlock unprecedented potentials of ferroelectric-related application at small length scales. In this work, using density functional theory (DFT) calculations, we discover a tribo-ferroelectricity behavior in a group of bilayer group-IV monochalcogenides (MX, with M = Ge, Sn and X = S, Se). Upon interlayer sliding over an in-plane unit cell length, the top layer exhibits a reversible intralayer ferroelectric switching, leading to a reversible transition between the ferroelectric (electric polarization of 40$\mu$C/cm$^2$) and antiferroelectric states in the bilayer MXs. Our results show that the interlayer van der Waals interaction, which is usually considered to be weak, can actually generate an in-plane lattice distortion and thus cause the breaking/forming of intralayer covalent bonds in the top layer, leading to the observed tribo-ferroelectricity phenomenon. This unique property has several advantages for energy harvesting over existing piezoelectric and triboelectric nanogenerators. The interlayer sliding-induced polarization change is as high as 40$\mu$C/cm$^2$, which can generate an open-circuit voltage two orders of magnitude higher than that of MoS$_2$-based nanogenerators. The polarization change occurs over a time period for interlayer sliding over a unit-cell length, leading to an ultrahigh polarization changing rate and thus an ultrahigh short-circuit current. The theoretical prediction of power output for the tribo-ferroelectric bilayer MXs at a moderate sliding speed 1 m/s is four orders of magnitude higher than the MoS$_2$ nanogenerator, indicating great potentials in energy harvesting applications., Comment: Manuscript: 19 pages including 4 figures