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Your search keyword '"Dai, Zhi-Hua"' showing total 19 results
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19 results on '"Dai, Zhi-Hua"'

12. Roles of phytohormones in mitigating abiotic stress in plants induced by metal(loid)s As, Cd, Cr, Hg, and Pb.

Author

Dai, Zhi-Hua, Guan, Dong-Xing, Bundschuh, Jochen, and Ma, Lena Q.

Subjects
*PLANT hormones, *ABIOTIC stress, *METALS, *ABSCISIC acid, *NUTRIENT uptake, *CROP yields
Abstract

Phytohormones, including auxin, abscisic acid, gibberellic acid, ethylene, cytokinin, brassinosteroids, salicylic acid, and jasmonic acid, provide beneficial effects for plants against metal(loid) toxicity. However, their mechanisms in alleviating metal(loid) toxicity in plants have not been fully understood. Here, we summarize phytohormone-mediated detoxification mechanisms of metal(loid)s in plants, including As, Cd, Cr, Hg, and Pb. First, we discussed the functions of phytohormones on plant growth and nutrient uptake, and the effects of metal(loid)s on plant growth and hormone contents. We then discussed the underlying mechanisms of selected phytohormones in alleviating metal(loid) toxicity in plants. Those phytohormones protect plants against metal(loid) toxicity mainly by enhancing plant growth, increasing antioxidant capacity, promoting cell wall synthesis and nutrient uptake, and decreasing metal(loid) accumulation. This review highlights the beneficial roles of phytohormones in reducing plant metal(loid) uptake and in enhancing crop yields, which helps to improve crop production and food safety. [ABSTRACT FROM AUTHOR]

Published
2023
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19. Optimization of high rate growth high quality μc-Si:H thin films and its application to the solar cells

Author

Zhao Ying, Hou Guo-Fu, Dai Zhi-Hua, Chen Xin-Liang, Zhang Xiao-Dan, Han Xiao-Yan, Li Gui-Jun, Sun Jian, Wei Chang-Chun, Zhang De-Kun, Xue Jun-Ming, and Geng Xin-Hua

Subjects
Crystal, symbols.namesake, Materials science, Plasma-enhanced chemical vapor deposition, Analytical chemistry, symbols, General Physics and Astronomy, Thin film, Raman spectroscopy, Microstructure, Saturation (magnetic), Grain size, Spectral line
Abstract

A series of high rate growth μc-Si:H thin films with different thicknesses were deposited by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） process with high power and high pressure. The microstructure of the μc-Si:H thin films was studied by the Raman and XRD spectra. It was found that the crystal fraction and grain size increased with the thickness of the thin film when the thickness was less than 1000 nm, and then came to saturation when the thickness was higher than 1000 nm. However, the performance of solar cells decreased obviously when the thickness increased from 1000 nm to 2000 nm. Considering the microstructure properties and the ion bombardment during the high rate process, we investigated the controlled microstructure evolution and the improved material quality by discharge power profiling, which improved the performance of solar cells. By optimizing the profiling parameters, such as the amount and the rate of change in discharge power, a high efficiency of 9.36% was obtained with an i-layer deposition rate of 1.2 nm/s. Furthermore, we used the improved μc-Si:H cell in an a-Si:H/μc-Si:H double-junction structure and achieved an initial active-area cell efficiency of 1114%.

Published
2009

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