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Various [Hf.sub.x][Ta.sub.y][Si.sub.z]N metal gate electrodes are developed to achieve work function near the midgap and excellent thermal stability for fully depleted silicon-on-insulator and symmetric double-gate transistor devices. The MOS device with the [Hf.sub.0.19][Ta.sub.0.41][Si.sub.0.26][N.sub.0.14] metal gate showed excellent electrical property and thermal stability after different PMA treatment and stress time.

The thermal stability and electrical characteristics of MOS devices with clustered vertical furnace-grown, native oxide-free, ultrathin gate oxides and [Hf.sub.x][Ta.sub.y]N meal gates are investigated and their metal-diffusion effects are studied by using postmetallization annealing (PMA). The results have shown that the clustered vertical furnace-grown oxides have displayed enhancements in thermal stability and electrical characteristics, making it a promising gate stack for advanced MOS device applications.

An approach to fabrication large-scaled patterned organic light-emitting devices on the flexible polyethylene-terephthalate substrates using low-pressure imprinting lithography is demonstrated. The performances of the patterned devices were comparable to that of conventional photolithography.

A comprehensive study of Plasma-charging effects on the electrical properties of MOS devices was investigated. Plasma processing offers advantages in terms of directionality, low temperature and simple process.

The radiation hardness (RadHrd) of semiconductor devices is important in space, military, nuclear power plant and high energy physics detector applications. The RadHrd test of static random-access-memory (SRAM) has been undertaken using the Co-60 gamma ray and does-to-failure parameter. The number of error-bytes vs dose, was found to provide a clear dose-to-failure. Test conditions of dose rate, temperature and power supply voltage have to be specified to ensure meaningful test results.

Experiments on metal-oxide nitride-oxide semiconductor (MONOS) devices suggest that the use of irradiation-then-anneal treatment reduces hot-carrier- and radiation-induced interface degradation in these devices. The treatment consists of irradiating Co-60 immediately followed by annealing in N2 at 400 degrees C for 10 minutes. The changes may be explained in terms of SiO2/Si interfacial strain.

Using data from ninety commercial banks in the Indonesian banking sector, this paper investigates the impact of the acquisition of domestic private banks by foreign banks on lending behaviour, particularly SME credit. Among foreign banks, we differentiate between acquired banks and greenfield foreign banks, and examine whether the acquired banks changed their lending behaviour following their acquisition. Our empirical results of effects on the credit supply of acquired banks are not clear except SME credit; between 2000 and 2009, the acquired banks did reduce credit to SMEs after acquisition. Keywords: Foreign bank entry, SME credit, bank, financial sector development, Indonesia., 1. Introduction The entry of foreign banks into the banking sectors of developing countries has increased in recent years. This has also occurred in member countries of the Association of [...]