1. A Thin-Film, a-IGZO, 128b SRAM and LPROM Matrix With Integrated Periphery on Flexible Foil
- Author
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Joris Maas, Joris de Riet, Jan-Laurens van der Steen, Marc Ameys, Wim Dehaene, Jan Genoe, Florian De Roose, and Kris Myny
- Subjects
010302 applied physics ,Engineering ,Hardware_MEMORYSTRUCTURES ,business.industry ,020208 electrical & electronic engineering ,Byte ,02 engineering and technology ,01 natural sciences ,Amorphous solid ,Matrix (mathematics) ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,Static random-access memory ,Electrical and Electronic Engineering ,Thin film ,business ,Computer hardware ,Decoding methods ,Volatile memory ,Block (data storage) - Abstract
A fast, 128-b implementation of both SRAM and LPROM with integrated periphery in a thin-film amorphous indium–gallium–zinc oxide technology is reported. The SRAM block can be read in 265 $\mu \text{s}$ /byte and written in 110 $\mu \text{s}$ /byte, consumes 12.3 mW, and has an area of 11.9 mm2. Furthermore, after power down, an SRAM memory state retention time of 83 s is shown. The LPROM can be read in 40 $\mu \text{s}$ /b, consumes 4.50 mW, and has an area of 3.75 mm2. The SRAM enables fast volatile RAM memory for thin-film microprocessors, while the LPROM can be used to store the identification code for state-of-the-art thin-film RFID tags.
- Published
- 2017