1. A Novel Configuration of a Microstrip Microwave Wideband Power Amplifier for Wireless Application
- Author
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El Abdellaoui Larbi, Zbitou Jamal, Ahmed Errkik, Amine Rachakh, Abdelali Tajmouati, Latrach Mohamed, Laboratoire Mécanique Energétique Electronique Télécommunications [Settat] (LMEET), Faculté des Sciences et Techniques [Settat] (FSTS), Université Hassan 1er [Settat]-Université Hassan 1er [Settat], Institut d'Électronique et des Technologies du numéRique (IETR), Université de Nantes (UN)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), and Nantes Université (NU)-Université de Rennes 1 (UR1)
- Subjects
Power gain ,input matching ,Frequency band ,output matching ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,Microstrip ,law.invention ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Scattering parameters ,Electrical and Electronic Engineering ,Wideband ,010306 general physics ,bipolar junction transistors (BJTs) ,Physics ,business.industry ,Amplifier ,Transmitter ,Transistor ,Electrical engineering ,020206 networking & telecommunications ,wideband power amplifier ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,business ,microstrip technology ,advanced design system (ADS) - Abstract
International audience; RF/microwave power amplifier (PA) is one of the components that has a large effect on the overall performance of communication system especially in transmitter system and their design is decided by the parameters of transistor selected. This letter presents a new concept of a wide-band microwave amplifier using scattering parameters that is often used in the radio frequency communication systemas an application of the active integrated antenna[1- 2]. This power amplifier operates from 1.75 GHz to 2.15GHz frequency and it is based on AT-41410 NPN transistor that has a high transition frequency of 10GHz. The proposed Single Stage PA is designed by microstrip technology and simulated with Advanced Design System (ADS) software. The simulation results indicate good performances; the small power gain (S21) is changed between 11.8 and 10dB. For the input reflection coefficient (S11) is varied between -11 and -22.5dB. Regarding the output reflection coefficient (S22) is varied between -13.1 and -18.7dB over the wide frequency band of 1.75-2.15GHz and stability without oscillating over a wide range of frequencies.
- Published
- 2018