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Detection of terahertz radiation by GaAs transistor structures has been studied experimentally. The two types of samples under study included dense arrays of HEMTs and large-apertures detectors. Arrays consisted of parallel and series chains with asymmetric gate transistors for enhanced photoresponse on terahertz radiation. We investigated two types of wide-aperture detectors: grating gate detector, and single gate detector with bow-tie antenna. Wide-aperture detectors were symmetrical. Studies of transistor chains have shown that two essential features for this type of detector are the presence of asymmetry in the gate, and the type of connection between individual transistors themselves. Wide-aperture detectors have also been tested by narrow beams of terahertz radiation, which allows analyzing the role influence of individual parts of the detector for total sensitivity to terahertz excitation. The sensitivity and noise equivalent power of the detectors were evaluated. [ABSTRACT FROM AUTHOR]

No abstract received. [ABSTRACT FROM AUTHOR]

Presents a study that investigated the low-frequency noise in a heterostructure field effect transistor and a metal oxide semiconductor heterostructure field effect transistor. Methodology; Comparison of the low-frequency noise in the two transistors; Analysis of the dependence of the low-frequency noise on the two-dimensional electron concentration.