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In this paper, we study the spin-dependent electron transmission through a quantum well in semiconductor heterostructures with dipole-type oscillation field and homogeneous oscillation field. The numerical evaluations show that Dresselhaus spin-orbit coupling eliminates the spin degeneracy and leads to the splitting of asymmetric Fano-type resonance peaks in the transmissivity. The width of the splitting peaks is found to be highly sensitive to the direction of incident electron. The dipole modulation and the homogeneous modulation is approximately equivalent under certain conditions. The location and the line shape of the Fano-type resonance can be controlled by adjusting the energy and the direction of the incident electron, the oscillation frequency, and the amplitude of the external field. These interesting features may be used to devise tunable spin filters and realize pure spin transmission currents by the more practical dipole-type oscillation in the experimental setup. [ABSTRACT FROM AUTHOR]

Within the Luttinger Hamiltonian, electric-field-induced resonant spin polarization of a two-dimensional hole gas in a perpendicular magnetic field was studied. The spin polarization arising from splitting between the light and the heavy hole bands shows a resonant peak at a certain magnetic field. Especially, the competition between the Luttinger term and the structural inversion asymmetry leads to a rich resonant peaks structure, and the required magnetic field for the resonance may be effectively reduced by enlarging the effective width of the quantum well. Furthermore, the Zeeman splitting tends to move the resonant spin polarization to a relative high magnetic field and destroy these rich resonant spin phenomena. Finally, both the height and the weight of the resonant peak increase as the temperature decreases. It is believed that such resonant spin phenomena may be verified in the sample of a two-dimensional hole gas, and it may provide an efficient way to control spin polarization by an external electric field. [ABSTRACT FROM AUTHOR]

We present a GaAs/AlGaAs-based quantum well device capable of achieving an appreciable spin polarization coupled with high electron transmission. Our numerical results indicate that the device is able to achieve a high spin polarization without the need for less commonly used materials with high g-factors required by previously proposed semiconductor-based systems. The electron transmission and spin polarization amplitude of our structure is found to be robust to the length of the parabolic well, which could ease the fabrication of such structures in practical applications. [ABSTRACT FROM AUTHOR]

We study the magnetization and the magnetic phases of II-VI-based n-doped nonmagnetic- semiconductor (NMS) / narrow to wide dilute-magnetic-semiconductor (DMS) / n-doped NMS quantum wells under in-plane magnetic field. The parallel magnetic field is used as a tool, in order to achieve non-step-like density of states in these -appropriate for conduction-band spintronics- structures. [ABSTRACT FROM AUTHOR]