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We theoretically investigate the spin-dependent transport properties of electrons in realistic magnetic-electric barrier nanostructures, which are produced by the deposition, on top of a heterostructure, of a metallic ferromagnetic stripe with an applied voltage. The degree of the electron-spin polarization is found to be closely associated with this voltage, although the use of applied voltage itself induces no spin polarization effect. As a positive voltage is applied to the stripe the electron-spin polarization shifts towards the low-energy region and increases; it shifts towards the high-energy direction and reduces for a negative applied voltage. These results shown in this work imply that the degree of electron-spin polarization can be tuned by means of an applied voltage on the stripes of system, which may result in a practical voltage-controlled spin filter. [ABSTRACT FROM AUTHOR]

We study the magnetization and the magnetic phases of II-VI-based n-doped nonmagnetic- semiconductor (NMS) / narrow to wide dilute-magnetic-semiconductor (DMS) / n-doped NMS quantum wells under in-plane magnetic field. The parallel magnetic field is used as a tool, in order to achieve non-step-like density of states in these -appropriate for conduction-band spintronics- structures. [ABSTRACT FROM AUTHOR]