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Ordered ZnO arrays with a peculiar nanostructure were synthesized by a multistep synthesis process. The first step was the preparation of ZnO seed to induce the formation of ZnO array via potentiostatic electrodeposition method using a typical three electrode set-up. The second step was fabricating ZnO array along seed by Chemical Bath Deposition. Structural analysis of ZnO was carried out with X-ray diffraction (XRD), which showed a hexagonal wurtzite structure, and the selected area electron diffraction (SAED) patterns indicated that nanocrystalline is a part of monocrystal. The scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to study the microstructure, and showed a pagoda-like microstructure with a tiny top and large bottom, which had an average top diameter of exceeding 800nm at seed-depositing time of 60s, and then growth mechanisms are subsequently given a further explanation, viewed from kinetics and thermodynamics. In addition, the current-voltage curves of schottky diode devices with ZnO nanopagoda arrays revealed that ZnO films arrays along grown ZnO seed had a higher reverse saturation current than ZnO films grown without seed, which are A and A, respectively. The minimum turn-on voltage of the diode with ZnO seed deposited 60s is 0.18V, without seed is 0.52V. A peculiar nanostructure which is similar to hexagonal pagoda with a tiny top and large bottom was observed via seed-induced method. However, semi-ZnO/metal-Al Schottky diodes were assemble, and that structure exhibits a typical rectifying behavior, and obtained low turn-on voltages which represent current responses, 0.52 V, 0.40 V, 0.18 V, respectively. The as-grown ZnO nanopagoda along grown ZnO seed with the deposition time of 60 s exhibited a slightly higher reverse saturation current than the as-grown ZnO arrays without ZnO seed. [ABSTRACT FROM AUTHOR]