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23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1465-1467, Copper electroplating chemistry was applied in three different ways to fabricate frontal grid metallization in silicon solar cells. This paper describes recent developments of electrochemical plating of copper on silver paste screen printed lines, in laser grooved trenches used as buried contacts and directly on semi-conductive anti-reflective coatings. Silver paste screen printed lines were electroplated with 12 μm thick copper, which enables a decrease in metal line resistivity of more than 50%. Laser-scribed grooved silicon wafers were plated with 100 nm thick nickel diffusion barrier and conductive 180 nm thick copper layer by electroless nickel and copper plating, then efficient electroplating copper bottom-up fill of the trenches was applied without shading effects and at a plating rate of more than 3 μm/min. Lastly, photo-selective method for nickel-copper deposition was used to construct 35 μm thick copper collection grid. This novel method is described for the development of new solar cells with semiconductive anti-reflective coating.