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Low-dimensional quantum materials that remain strongly ferromagnetic down to monolayer thickness are highly desired for spintronic applications. Although oxide materials are important candidates for the next generation of spintronics, ferromagnetism decays severely when the thickness is scaled to the nanometer regime, leading to deterioration of device performance. Here, a methodology is reported for maintaining strong ferromagnetism in insulating LaCoO 3 (LCO) layers down to the thickness of a single unit cell. It is found that the magnetic and electronic states of LCO are linked intimately to the structural parameters of adjacent "breathing lattice" SrCuO 2 (SCO). As the dimensionality of SCO is reduced, the lattice constant elongates over 10% along the growth direction, leading to a significant distortion of the CoO 6 octahedra, and promoting a higher spin state and long-range spin ordering. For atomically thin LCO layers, surprisingly large magnetic moment (0.5 μ B /Co) and Curie temperature (75 K), values larger than previously reported for any monolayer oxides are observed. The results demonstrate a strategy for creating ultrathin ferromagnetic oxides by exploiting atomic heterointerface engineering, confinement-driven structural transformation, and spin-lattice entanglement in strongly correlated materials., (© 2020 Wiley-VCH GmbH.)

Strain engineering provides the ability to control the ground states and associated phase transition in epitaxial films. However, the systematic study of the intrinsic character and strain dependency in transition-metal nitrides remains challenging due to the difficulty in fabricating stoichiometric and high-quality films. Here the observation of an electronic state transition in highly crystalline antiferromagnetic CrN films with strain and reduced dimensionality is reported. By shrinking the film thickness to a critical value of ≈30 unit cells, a profound conductivity reduction accompanied by unexpected volume expansion is observed in CrN films. The electrical conductivity is observed surprisingly when the CrN layer is as thin as a single unit cell thick, which is far below the critical thickness of most metallic films. It is found that the metallicity of an ultrathin CrN film recovers from insulating behavior upon the removal of the as-grown strain by the fabrication of freestanding nitride films. Both first-principles calculations and linear dichroism measurements reveal that the strain-mediated orbital splitting effectively customizes the relatively small bandgap at the Fermi level, leading to an exotic phase transition in CrN. The ability to achieve highly conductive nitride ultrathin films by harnessing strain-control over competing phases can be used for utilizing their exceptional characteristics., (© 2020 Wiley-VCH GmbH.)

Considering that the human brain uses ≈10 15 synapses to operate, the development of effective artificial synapses is essential to build brain-inspired computing systems. In biological synapses, the voltage-gated ion channels are very important for regulating the action-potential firing. Here, an electrolyte-gated transistor using WO 3 with a unique tunnel structure, which can emulate the ionic modulation process of biological synapses, is proposed. The transistor successfully realizes synaptic functions of both short-term and long-term plasticity. Short-term plasticity is mimicked with the help of electrolyte ion dynamics under low electrical bias, whereas the long-term plasticity is realized using proton insertion in WO 3 under high electrical bias. This is a new working approach to control the transition from short-term memory to long-term memory using different gate voltage amplitude for artificial synapses. Other essential synaptic behaviors, such as paired pulse facilitation, the depression and potentiation of synaptic weight, as well as spike-timing-dependent plasticity are also implemented in this artificial synapse. These results provide a new recipe for designing synaptic electrolyte-gated transistors through the electrostatic and electrochemical effects., (© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform., (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Retention indices for frequently reported compounds of plant essential oils on three different stationary phases were investigated. Multivariate linear regression, partial least squares, and support vector machine combined with a new variable selection approach called random-frog recently proposed by our group, were employed to model quantitative structure-retention relationships. Internal and external validations were performed to ensure the stability and predictive ability. All the three methods could obtain an acceptable model, and the optimal results by support vector machine based on a small number of informative descriptors with the square of correlation coefficient for cross validation, values of 0.9726, 0.9759, and 0.9331 on the dimethylsilicone stationary phase, the dimethylsilicone phase with 5% phenyl groups, and the PEG stationary phase, respectively. The performances of two variable selection approaches, random-frog and genetic algorithm, are compared. The importance of the variables was found to be consistent when estimated from correlation coefficients in multivariate linear regression equations and selection probability in model spaces., (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

LaMnO(3) (LMO) films are deposited on SrTiO(3):Nb (0.8 wt%) substrates under various oxygen pressures to obtain different concentrations of oxygen vacancies in the films. The results of X-ray diffraction verify that with a decrease of the oxygen pressure, the c-axis lattice constant of the LMO films becomes larger, owing to an increase of the oxygen vacancies. Aberration-corrected annular-bright-field scanning transmission electron microscopy with atomic resolution and sensitivity for light elements is used, which clearly shows that the number of oxygen vacancies increases with the decrease of oxygen pressure during fabrication. Correspondingly, the resistive switching property becomes more pronounced with more oxygen vacancies in the LMO films. Furthermore, a numerical model based on the modification of the interface property induced by the migration of oxygen vacancies in these structures is proposed to elucidate the underlying physical origins. The calculated results are in good agreement with the experimental data, which reveal from a theoretical point of view that the migration of oxygen vacancies and the variation of the Schottky barrier at the interface with applied bias dominate the resistive switching characteristic. It is promising that the resistive switching property in perovskite oxides can be manipulated by controlling the oxygen vacancies during fabrication or later annealing in an oxygen atmosphere., (Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)