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Perovskite materials, celebrated for their exceptional optoelectronic properties, have seen extensive application in the field of light-emitting diodes (LEDs), where research is as abundant as the proverbial "carloads of books." In this review, the research of perovskite materials is delved into from a dimensional perspective, with a focus on the exemplary performance of low-dimensional perovskite materials in LEDs. This discussion predominantly revolves around perovskite quantum wires and perovskite nanorods. Perovskite quantum wires are versatile in their growth, compatible with both solution-based and vapor-phase growth, and can be deposited over large areas-even on spherical substrates-to achieve commendable electroluminescence (EL). Perovskite nanorods, on the other hand, boast a suite of superior characteristics, such as polarization properties and tunability of the transition dipole moment, endowing them with the great potential to enhance light extraction efficiency. Furthermore, zero-dimensional (0D) perovskite materials like nanocrystals (NCs) are also the subject of widespread research and application. This review reflects on and synthesizes the unique qualities of the aforementioned materials while exploring their vital roles in the development of high-efficiency perovskite LEDs (PeLEDs)., (© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)

Energy-efficient white light-emitting diodes (LEDs) are in high demand across the society. Despite the significant advancements in the modern lighting industry based on solid-state electronics and inorganic phosphor, solid-state lighting (SSL) continues to pursue improved efficiency, saturated color performance, and longer lifetime. Here in this article, robust, narrow emission band nanorods (NRs) are disclosed with tailored wavelengths, aiming to enhance the color rendering index (CRI) and luminous efficacy (LE). The fabricated lighting device consists of NRs of configuration CdSe/Zn x Cd 1-x S/ZnS, which can independently tune CRI R1-R9 values and maximize the luminous efficacy. For general lighting, NRs with quantum yield (QY) up to 96% and 99% are developed, resulting in ultra-efficient LEDs reaching a record high luminous efficacy of 214 lm W -1 (certified by the National Accreditation Service). Furthermore, NRs are deployed onto mid-power (0.3 W@ 50 mA) LEDs, showing significantly enhanced long-term stability (T 95 = 400 h @ 50 mA). With these astonishing properties, the proposed NRs can pave the way for efficient lighting with desired optical spectrum., (© 2024 The Authors. Small published by Wiley‐VCH GmbH.)

Quantum dot (QD) light-emitting diodes (QLEDs) have attracted extensive attention due to their high color purity, solution-processability, and high brightness. Due to extensive efforts, the external quantum efficiency (EQE) of QLEDs has approached the theoretical limit. However, because of the efficiency roll-off, the high EQE can only be achieved at relatively low luminance, hindering their application in high-brightness devices such as near-to-eye displays and lighting applications. Here, this article reports an ultralow roll-off QLED that is achieved by simultaneously blocking electron leakage and enhancing the hole injection, thereby shifting the recombination zone back to the emitting QDs layer. These devices maintain EQE over 20.6% up to 1000 mA cm -2 current density, dropping only by ≈5% from the peak EQE of 21.6%, which is the highest value ever reported for the bottom-emitting red QLEDs. Furthermore, the maximum luminance of the optimal device reaches 320 000 cd m -2 , 2.7 times higher than the control device (L max : 128 000 cd m -2 ). A passive matrix (PM) QLED display panel with high brightness based on the optimized device structure is also demonstrated. The proposed approach advances the potential of QLEDs to operate efficiently in high-brightness scenarios., (© 2023 Wiley-VCH GmbH.)