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As one key issue of resistive switching (RS) memory, the cycling endurance is poorly understood in hybrid perovskite‐based memory devices. Here, the cycling failure and the corresponding cycling‐induced degradation of CH3NH3PbI3‐based resistive random access memory devices are discussed. The high resistance state clearly decreases with the number of operation cycles, finally triggering irreversible failure in the collapse of switching window. By monitoring the I–V curves for all cycles, a negative set event is observed to be the critical turning point that considerably accelerates the cycling degradation rate. The decrease of |Vset| and |Vreset| indicates a reduction of the migration barrier of iodine vacancies (VI), which accounts for the appearance of a negative set after cycling. The understanding of RS cycling degradation can promote the optimization of device endurance by slowing the defect accumulation rate. The endurance degradation of CH3NH3PbI3‐based RRAM is attributed to the excessive defect accumulation during cycling operation. During the reset process, a negative set event is observed to accelerate the endurance degradation rate. Moreover, the decrease of transition voltages suggests a reduction of the migration barrier of iodine vacancies with cycling operation. [ABSTRACT FROM AUTHOR]