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Layered ternary type‐II Weyl semimetals demonstrate promising applications in high‐performance and broadband optoelectronics, therefore it is crucial to gain insights into their photocarriers' dynamics. In this work, the probing polarization dependence of non‐equilibrium dynamics in NbIrTe4 is investigated by using transient reflectivity spectroscopy. Following photoexcitation at 3.18 eV, the dynamical response of 1.59 eV probe pulse exhibits a strong dependence on probe polarization. The relaxation comprises two components: a rapid recovery of ≈0.6 ps attributed to the electron–phonon scattering, and an anomalous slow recovery spanning hundreds of picoseconds attributed to the photoinduced quasi‐particle. The polarization dependence of rapid relaxation time τ is indicative of the in‐plane anisotropy of electron–phonon coupling in NbIrTe4. The slow relaxation modulated by a latest reported 16 cm−1 coherent phonon also shows strong probing polarization dependence, further revealing the anisotropic nature of electron–phonon coupling and the possibility of anisotropic lattice distortion, as well as photoinduced polaron, under ultrafast photoexcitation in NbIrTe4. The dynamical anisotropy in NbIrTe4 has provided valuable guidance for the application of NbIrTe4 in polarization‐sensitive nonlinear optics or optoelectronic devices and offers insights into the unique carrier transport as well as phonon transport properties of this newly established topological material. [ABSTRACT FROM AUTHOR]

Layered ternary type‐II Weyl semimetals demonstrate promising applications in high‐performance and broadband optoelectronics, therefore it is crucial to gain insights into their photocarriers' dynamics. In this work, the probing polarization dependence of non‐equilibrium dynamics in NbIrTe4 is investigated by using transient reflectivity spectroscopy. Following photoexcitation at 3.18 eV, the dynamical response of 1.59 eV probe pulse exhibits a strong dependence on probe polarization. The relaxation comprises two components: a rapid recovery of ≈0.6 ps attributed to the electron–phonon scattering, and an anomalous slow recovery spanning hundreds of picoseconds attributed to the photoinduced quasi‐particle. The polarization dependence of rapid relaxation time τ is indicative of the in‐plane anisotropy of electron–phonon coupling in NbIrTe4. The slow relaxation modulated by a latest reported 16 cm−1 coherent phonon also shows strong probing polarization dependence, further revealing the anisotropic nature of electron–phonon coupling and the possibility of anisotropic lattice distortion, as well as photoinduced polaron, under ultrafast photoexcitation in NbIrTe4. The dynamical anisotropy in NbIrTe4 has provided valuable guidance for the application of NbIrTe4 in polarization‐sensitive nonlinear optics or optoelectronic devices and offers insights into the unique carrier transport as well as phonon transport properties of this newly established topological material. [ABSTRACT FROM AUTHOR]

Birefringence, which modulates the polarization of electromagnetic wave, has been commercially developed and widely used in modern photonics. Fostered by high-frequency signal processing and communications, feasible birefringence technologies operating in gigahertz (GHz) range are highly desired. Here, a coherent phonon-induced GHz optical birefringence and its manipulation in SrTiO3 (STO) crystals are demonsrated. With ultrafast laser pumping, the coherent acoustic phonons with low damping are created in the transducer/STO structures. A series of transducer layers are examined and the optimized one with relatively high photon-phonon conversion efficiency, i.e., semiconducting LaRhO3 film, is obtained. The most intriguing finding here is that, by virtue of high sensitivity to strain perturbation of STO, GHz optical birefringence can be induced by the coherent acoustic phonons and the birefringent amplitudes possess crystal orientation dependence. Optical manipulation of both coherent phonons and its induced GHz birefringence by double pump technique are also realized. These findings reveal an alternative mechanism of ultrafast optical birefringence control, and offer prospects for applications in high-frequency acoustic-optics devices. [ABSTRACT FROM AUTHOR]

Birefringence, which modulates the polarization of electromagnetic wave, has been commercially developed and widely used in modern photonics. Fostered by high-frequency signal processing and communications, feasible birefringence technologies operating in gigahertz (GHz) range are highly desired. Here, a coherent phonon-induced GHz optical birefringence and its manipulation in SrTiO3 (STO) crystals are demonsrated. With ultrafast laser pumping, the coherent acoustic phonons with low damping are created in the transducer/STO structures. A series of transducer layers are examined and the optimized one with relatively high photon-phonon conversion efficiency, i.e., semiconducting LaRhO3 film, is obtained. The most intriguing finding here is that, by virtue of high sensitivity to strain perturbation of STO, GHz optical birefringence can be induced by the coherent acoustic phonons and the birefringent amplitudes possess crystal orientation dependence. Optical manipulation of both coherent phonons and its induced GHz birefringence by double pump technique are also realized. These findings reveal an alternative mechanism of ultrafast optical birefringence control, and offer prospects for applications in high-frequency acoustic-optics devices. [ABSTRACT FROM AUTHOR]

Few-layer graphene grown by chemical vapor deposition has been studied by Raman and ultrafast laser spectroscopy. A low-wavenumber Raman peak of ~120 cm−1 and a phonon-induced oscillation in the kinetic curve of electron-phonon relaxation process have been observed, respectively. The Raman peak is assigned to the low-wavenumber out-of-plane optical mode in the few-layer graphene. The phonon band shows an asymmetric shape, a consequence of so-called Breit-Wigner-Fano resonance, resulting from the coupling between the low-wavenumber phonon and electron transitions. The obtained oscillation wavenumber from the kinetic curve is consistent with the detected low-wavenumber phonon by Raman scattering. The origin of this oscillation is attributed to the generation of coherent phonons and their interactions with photoinduced electrons. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]