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Intrinsic silicon (Si) is forbidden for infrared (IR) sensing at the communication wavelength like 1.31 or 1.55 µm due to the well‐known bandgap limitation. In this work, an unexpected physical picture of using argon (Ar) is identified, which is usually inert to the surrounding chemical environment and used as a protective agent in semiconductor processing, to overcome the IR‐sensing‐forbidden problem in Si. Here, it is shown by an analysis of a dynamic secondary ion mass spectrometer that such a Si, when exposed to laser pulse in Ar gas, can contain a very high dose of Ar up to 1020 cm−3 even after 1300 days. First‐principles calculations, molecular dynamics, and Hall effect measurements reveal that, due to both steric and dynamic repulsions by Ar orbitals to Si dangling bonds, the Ar‐filled‐vacancy produces a much wider defect band inside the gap, which is not only responsible for strong infrared absorption, but also causes a significant increase in n‐type conductivity, both in line with experiments. The study proves that originally inert elements in fact can act as active impurities in semiconductors for advanced applications, which updates the current knowledge of defect physics. [ABSTRACT FROM AUTHOR]

Chalcogenide perovskites have emerged as promising semiconductor materials due to their appealing properties, including tunable bandgaps, high absorption coefficients, reasonable carrier lifetimes and mobilities, excellent chemical stability, and environmentally benign nature. However, beyond the well‐studied BaZrS3, reports on chalcogenide perovskite thin films with diverse compositions are scarce. In this study, the realization of four different types of chalcogenide perovskite thin films with controlled phases, through CS2 annealing of amorphous chalcogenide precursor films deposited by pulsed laser deposition (PLD), is reported. This achievement is guided by a thorough theoretical investigation of the phase stability of chalcogenide perovskites. Upon crystallization in the distorted perovskite phase, all materials exhibit photoluminescence (PL) with peak positions in the visible range, consistent with their expected bandgap values. However, the full‐width‐at‐half‐maximum (FWHM) of the PL spectra varies significantly across these materials, ranging from 99 meV for SrHfS3 to 231 meV for BaHfS3. The difference is attributed to the difference in kinetic barriers between local structural motifs for the Sr and Ba compounds. The findings underscore the promise of chalcogenide perovskite thin films as an alternative to traditional halide perovskites for optoelectronic applications, while highlighting the challenges in optimizing their synthesis and performance. [ABSTRACT FROM AUTHOR]

Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe‐like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10−4–10−3. This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less‐distorted octahedral‐like atomic configurations across the Sb/SiO2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively‐miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially. [ABSTRACT FROM AUTHOR]

Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale. As a result, the miniaturization of ferroelectric devices was hindered, which makes ferroelectric memory unable to keep up with the development of integrated‐circuit (IC) miniaturization. Recently, a two‐dimensional (2D) In2Se3 was reported to maintain stable ferroelectricity at the ultrathin scale, which is expected to break through the bottleneck of miniaturization. Soon, devices based on 2D In2Se3, including the ferroelectric field‐effect transistor, ferroelectric channel transistor, synaptic ferroelectric semiconductor junction, and ferroelectric memristor were demonstrated. However, a comprehensive understanding of the structures and the ferroelectric‐switching mechanism of 2D In2Se3 is still lacking. Here, the atomic structures of different phases, the dynamic mechanism of ferroelectric switching, and the performance/functions of the latest devices of 2D In2Se3 are reviewed. Furthermore, the correlations among the structures, the properties, and the device performance are analyzed. Finally, several crucial problems or challenges and possible research directions are put forward. We hope that this review paper can provide timely knowledge and help for the research community to develop 2D In2Se3 based ferroelectric memory and computing technology for practical industrial applications. [ABSTRACT FROM AUTHOR]

Lead halide perovskites have emerged as promising photovoltaic (PV) materials owing to their superior optoelectronic properties. However, they suffer from poor stability and potential toxicity. Here, computational screening with experimental synthesis is combined to explore stable, lead‐free, and defect‐tolerant PV materials. Heavy cations with lone‐pair electrons and mixed anions of chalcogens and halogens as a descriptor for simultaneous realization of defect tolerance and high stability are adopted. Together with the criteria of possessing direct band gap and optimal gap value, the inorganic material database is screened and CuBiSCl2 in the post‐perovskite structure is identified with an ideal band gap of 1.37 eV. The electronic structure and defect calculations suggest its defect‐tolerant characteristics. By optical absorption measurement, its band gap is confirmed to be ≈1.44 eV, with strong absorption near the band edge. The material is stable against thermal decomposition up to 300 °C and can survive from 25 days of storage at ambient conditions with 60% relative humidity. Prototype solar cells are fabricated and demonstrate an open circuit voltage of 1.09 V and a power conversion efficiency of 1.00%. With the excellent properties above, CuBiSCl2 is proposed to be a promising candidate for PV application. [ABSTRACT FROM AUTHOR]

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage. [ABSTRACT FROM AUTHOR]

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage. [ABSTRACT FROM AUTHOR]

Phase change memory (PCM) is an emerging non‐volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge‐Sb‐Te (GST) alloy based on experimental "trial‐and‐error" methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational high‐throughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge2Bi2Te5, GeAs4Te7, GeAs2Te4, so on and other candidates that have not been reported, such as TlBiTe2, TlSbTe2, CdPb3Se4, etc. Compared with GST, materials with close cohesive energy include AgBiTe2, TlSbTe2, As2Te3, TlBiTe2, etc., indicating possible low power consumption. Through further melt‐quenching molecular dynamic calculation and structural/electronic analyses, Ge2Bi2Te5, CdPb3Se4, MnBi2Te4, and TlBiTe2 are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big‐data applications. [ABSTRACT FROM AUTHOR]

Organic–inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein, a thin film of barium zirconium sulfide (BaZrS3), a lead‐free chalcogenide perovskite, is reported. Photoluminescence and X‐ray diffraction measurements show that BaZrS3 is far more stable than methylammonium lead iodide (MAPbI3) in moist environments. Moisture‐ and light‐induced degradations in BaZrS3 and MAPbI3 are compared by using simulations and calculations based on density functional theory. The simulations reveal drastically slower degradation in BaZrS3 due to two factors—weak interaction with water and very low rates of ion migration. BaZrS3 photodetecting devices with photoresponsivity of ≈46.5 mA W−1 are also reported. The devices retain ≈60% of their initial photoresponse after 4 weeks under ambient conditions. Similar MAPbI3 devices degrade rapidly and show a ≈95% decrease in photoresponsivity in just 4 days. The findings establish the superior stability of BaZrS3 and strengthen the case for its use in optoelectronics. New possibilities for thermoelectric energy conversion using these materials are also demonstrated. [ABSTRACT FROM AUTHOR]

Abstract: Ferroelectricity is usually found in compound materials composed by different elements. Here, based on first‐principles calculations, spontaneous electric polarization and ferroelectricity in 2D elemental group‐V (As, Sb, and Bi) monolayer with the puckered lattice structure similar to phosphorene is revealed. These are the first example of elemental ferroelectric materials. The polarization is due to the spontaneous lattice distortion with atomic layer buckling and has quite sizable values, comparable or even larger than that recently found in 2D monolayer compound SnTe. Interestingly, for Bi monolayer, apart from the ferroelectric phase, it is found that it can also host an antiferroelectric phase. The Curie temperatures of these elemental materials can be higher than room temperature, making them promising for realizing ultrathin ferroelectric devices of broad interest. A general model is constructed to understand and search for 2D ferroelectric and antiferroelectric materials in future studies. [ABSTRACT FROM AUTHOR]

Disorder‐induced electronic localization is responsible for the OFF state of the Ovonic threshold switching (OTS) device, which is an indispensable component in the present 3D‐crossbar‐architecture phase‐change memory circuit. However, the atomic mechanism of the OTS device, especially the role of thermal effect, remains a long‐term open question. Recent researches suggest that the working current of the OTS ON‐state is often large enough to melt the adjacent phase‐change memory material in the OTS+PCM devices. Thus, Joule heating‐induced atomic/electronic structure transition in OTS materials must be seriously considered. Taking the typical OTS material GeSe as an example, first‐principles calculations reveal an unexpected electronic delocalization induced by the enhanced structural disorder upon solid‐liquid transition. Meanwhile, as the temperature rises, the band gap decreases or even closes, leading to an increase in carrier concentration. Therefore, the melting filament with high conductivity could be responsible for the holding‐ON state of OTS materials. The results in this study may provide possible explanations for some puzzles of OTS devices, such as the reasons for holding‐ON state and limited endurance. [ABSTRACT FROM AUTHOR]

Hybrid organic inorganic perovskite solar cells based on CH3NH3PbI3 have drastically increased in efficiency over the past several years and are competitive with decades‐old photovoltaic materials such as CdTe. Despite this impressive increase, significant issues still remain due to the intrinsic instability of CH3NH3PbI3 which degrades into carcinogenic PbI2. Recently, double halide perovskites which use a pair of 1+–3+ cations to replace Pb2+, such as Cs2InSbI6, and chalcogenide perovskites, such as BaZrS3, have been explored as potential replacements. In this work, double chalcogenide perovskites are explored to identify novel photovoltaic absorbers that can replace CH3NH3PbI3. Due to the large space of possible compounds, machine learning methods are used to classify materials as potential photovoltaic absorbers using data from the periodic table, eliminating wasteful computation. A random forest algorithm achieves a cross‐validation accuracy of 86.4% on the constructed data set. Over 450 possible replacements are identified via traditional and statistical methods with Ba2AlNbS6, Ba2GaNbS6, Ca2GaNbS6, Sr2InNbS6, and Ba2SnHfS6 as the most promising alternative when thermodynamic stability, kinetic stability, and optical absorption are considered. [ABSTRACT FROM AUTHOR]

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage. [ABSTRACT FROM AUTHOR]

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage. [ABSTRACT FROM AUTHOR]