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The comparison of resistive switching (RS) storage in the same device architecture is explored for atomic layer deposition (ALD) Al2O3, HfO2 and HfAlOx-based resistive random access memory (ReRAM) devices. Among them, the deeper highand low-resistance states, more uniform VSET-VRES, persistent ROFF/RON (>102) ratio and endurance up to 105 cycles during both DC and AC measurements were observed for HfAlOx-based device. This improved behavior is attributed to the intermixing of amorphous Al2O3/HfO2 oxide layers to form amorphous thermally stable HfAlOx thin films by consecutive-cycled ALD. In addition, the higher oxygen content at Ti/HfAlOx thin films interface was found within the energy dispersive spectroscopy analysis (EDS). We believe this higher oxygen content at the interface could lead to its sufficient storage and supply, leading to the stable filament reduction-oxidation operation. Further given insight to the RS mechanism, SET/RESET power necessities and scavenging effect shed a light to the enhancement of HfAlOx-based ReRAM device as well. [ABSTRACT FROM AUTHOR]