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While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It is recently reported that a few single‐crystalline 2D van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here it is demonstrated that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. Systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe are reported, leading to material‐property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe is predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. The fracture toughness and cleavage energy are predicted to be 0.25 MPa m0.5 and 15 meV Å−2, respectively. The findings open a new realm of possibility for alloy selection and design toward processing‐friendly group‐III chalcogenides for practical applications. [ABSTRACT FROM AUTHOR]

As a typical hard but brittle material, Si tends to fracture abruptly at a stress well below its theoretical strength, even if the tested volume goes down to submicron scale, at which materials are usually nearly free of flaws or extended defects. Here, via the thermal–oxidation–mediated healing of the surface that is the preferred site for cracks or dislocations initiation, the premature fracture can be effectively inhibited and the over 50% homogeneous plastic strain with the near‐theoretical strength (twice the value of the unhealed counterpart) are united in submicron‐sized Si particles. In situ transmission electron microscope observations and atomistic simulations elucidate the confinement effect from the passivated and smoothened thermal oxide, which retards the dislocation nucleation and transforms the dominant deformation mechanism from partial dislocation to the more mobile full dislocation. This work demonstrates an effective and feasible surface engineering pathway to optimize the mechanical properties of Si at small scales. [ABSTRACT FROM AUTHOR]