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Silver‐bismuth‐based perovskite‐inspired materials (PIMs) are increasingly being explored as non‐toxic materials in photovoltaic applications. However, many of these materials exhibit an ultrafast localization of photogenerated charge carriers that is detrimental for charge‐carrier extraction. In this work, such localization processes are explored for thermally evaporated thin films of compositions lying along the (AgI)x(BiI3)y series, namely BiI3, AgBi2I7, AgBiI4, Ag2BiI5, Ag3BiI6, and AgI, to investigate the impact of changing Ag+/Bi3+ content. A persistent presence of ultrafast charge‐carrier localization in all mixed compositions and BiI3, together with unusually broad photoluminescence spectra, reveal that eliminating silver will not suppress the emergence of a localized state. A weak change in electronic bandgap and charge‐carrier mobility reveals the resilience of the electronic band structure upon modifications in the Ag+/Bi3+ composition of the mixed‐metal rudorffites. Instead, chemical composition impacts the charge‐carrier dynamics indirectly via structural alterations: Ag‐deficient compositions demonstrate stronger charge‐carrier localization most likely because a higher density of vacant sites in the cationic sublattice imparts enhanced lattice softness. Unraveling such delicate interplay between chemical composition, crystal structure, and charge‐carrier dynamics in (AgI)x(BiI3)y rudorffites provides crucial insights for developing a material‐by‐design approach in the quest for highly efficient Bi‐based PIMs. [ABSTRACT FROM AUTHOR]

Three‐photon‐pumped (3PP) excitonic lasing in inorganic semiconductor quantum dots (QDs) is of particular importance for near‐infrared biophotonics and optical communications. However, the implementation of such lasers has been hindered severely by the required high pump thresholds. Here, 3PP excitonic lasing of all‐inorganic cesium lead bromide perovskite QDs (CsPbBr3 PQDs) embedded in a whispering‐gallery microcavity is demonstrated, and achieving a record low threshold of 3 mJ cm−2 by tuning the 3P pump energy in resonance with the S exciton state. Wavelength‐dispersive Z‐scan spectroscopy reveals that such reduced lasing threshold is attributed to the exciton resonance enhanced multiphoton absorption, which, as disclosed by the kinetics analysis of transient absorption spectroscopy (TAS), leads to the appearance of net gain at a pump fluence as low as 2.2 mJ cm−2, corresponding to an average S exciton population of 1.5. A microscopic model incorporating the quantum master equation reproduces the TAS results and provides the intrinsic parameters of biexciton relaxation for lasing. The 3PP resonant excitonic transition is the most favored multiphoton pumping process that minimizes quantum defect (6.8% of the pump photon energy) to realize optical gain at low threshold, marking a major step toward using all‐inorganic perovskite QDs for on‐chip integrated microlasers and multiphoton bioimaging. [ABSTRACT FROM AUTHOR]

Metal halide perovskites are promising light absorbers for multijunction photovoltaic applications because of their remarkable bandgap tunability, achieved through compositional mixing on the halide site. However, poor energy‐level alignment at the interface between wide‐bandgap mixed‐halide perovskites and charge‐extraction layers still causes significant losses in solar‐cell performance. Here, the origin of such losses is investigated, focusing on the energy‐level misalignment between the valence band maximum and the highest occupied molecular orbital (HOMO) for a commonly employed combination, FA0.83Cs0.17Pb(I1‐xBrx)3 with bromide content x ranging from 0 to 1, and poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine] (PTAA). A combination of time‐resolved photoluminescence spectroscopy and numerical modeling of charge‐carrier dynamics reveals that open‐circuit voltage (VOC) losses associated with a rising energy‐level misalignment derive from increasing accumulation of holes in the HOMO of PTAA, which then subsequently recombine non‐radiatively across the interface via interfacial defects. Simulations assuming an ideal choice of hole‐transport material to pair with FA0.83Cs0.17Pb(I1‐xBrx)3 show that such VOC losses originating from energy‐level misalignment can be reduced by up to 70 mV. These findings highlight the urgent need for tailored charge‐extraction materials exhibiting improved energy‐level alignment with wide‐bandgap mixed‐halide perovskites to enable solar cells with improved power conversion efficiencies. [ABSTRACT FROM AUTHOR]

Organic–inorganic halide perovskite semiconductors have revolutionized next‐generation photovoltaics (PV) due to several characteristics such as solution‐processability, gap tunability, and excellent charge generation and transport properties. This has made them very adaptable for various applications in light harvesting and photodetection. One such rapidly growing application is indoor photovoltaics (IPV) which have the potential to power standalone Internet of Things devices. IPV requires wider optimal bandgaps than solar cells (1.8 vs 1.3 eV) due to the differences between the spectra of artificial lights versus solar radiation. For IPV applications, the active layer wide‐gap perovskite must be developed systemically considering all other components of the device, such as interlayers, electrodes, and scaling. This perspective provides an overview of the potential and challenges facing perovskite‐based IPV from a theoretical, material, and experimental perspective. Furthermore, accurate characterization of perovskite IPVs under simulated indoor conditions is discussed and candidate perovskite PV (PPV) systems are presented to provide insight into IPV development. These include IPV‐optimized formamidinium cesium‐based perovskite, wide‐gap p‐i‐n devices, and 2D perovskite devices, tested under spectrophotometrically calibrated LED illumination at various indoor‐relevant illuminances and benchmarked against thermodynamic predictions. Finally, strategies required to create stable, optimized PPV devices for indoor applications are discussed. [ABSTRACT FROM AUTHOR]

Two dimensional/three‐dimensional (2D/3D) metal halide perovskite heterostructures have attracted great interest in photovoltaic and light‐emitting diode (LEDs) applications. In both, their implementation results in an improvement in device efficiency yet the understanding of these heterostructures remains incomplete. In this work the role of organic cations, essential for the formation of 2D perovskite structures is unraveled, in a range of metal halide perovskite heterostructures. These heterostructures are used to fabricate efficient green perovskite LEDs and a strong dependence between cation content and device performance is shown. The crystal structure, charge‐carrier transport and dynamics, and the electronic structure of these heterostructures are studied and it is shown that the presence of crystalline 2D perovskite inhibits electron injection and ultimately lowers device performance. This work highlights the importance of optimizing the composition of these heterostructures in ensuring optimal device performance across all parameters and suggests that developing routes to inject charge‐carriers directly into 2D perovskite structures will be important in ensuring the continued development of perovskite LEDs based on these heterostructures. [ABSTRACT FROM AUTHOR]

Quaternary copper‐silver‐bismuth‐iodide compounds represent a promising new class of wide‐bandgap (2 eV) semiconductors for photovoltaic and photodetector applications. In this study, vapor phase co‐evaporation is utilized to fabricate Cu2AgBiI6 thin films and photovoltaic devices. The findings show that the properties of vapor‐deposited films are highly dependent upon processing temperature, exhibiting increased pinhole density and transforming into a mixture of quaternary, binary, and metallic phases depending on the post‐deposition annealing temperature. This change in phase is accompanied by an enhancement in photoluminescence (PL) intensity and charge‐carrier lifetime, along with the emergence of an additional absorption peak at high energy (≈3 eV). Generally, increased PL is a desirable property for a solar absorber material, but this change in PL is ascribed to the formation of CuI impurity domains, whose defect‐mediated optical transition dominates the emission properties of the thin film. Via optical pump terahertz probe spectroscopy, it is revealed that CuI impurities hinder charge‐carrier transport in Cu2AgBiI6 thin films. It is also revealed that the predominant performance limitation in Cu2AgBiI6 materials is the short electron‐diffusion length. Overall, the findings pave the way for potential solutions to critical issues in copper‐silver‐bismuth‐iodide materials and indicate strategies to develop environmentally compatible wide‐bandgap semiconductors. [ABSTRACT FROM AUTHOR]

Surface defects of metal halide perovskite nanocrystals (PNCs) substantially compromise the optoelectronic performances of the materials and devices via undesired charge recombination. However, those defects, mainly the vacancies, are structurally entangled with each other in the PNC lattice, necessitating a delicately designed strategy for effective passivation. Here, a synergistic metal ion doping and surface ligand exchange strategy is proposed to passivate the surface defects of CsPbBr3 PNCs with various divalent metal (e.g., Cd2+, Zn2+, and Hg2+) acetate salts and didodecyldimethylammonium (DDA+) via one‐step post‐treatment. The addition of metal acetate salts to PNCs is demonstrated to suppress the defect formation energy effectively via the ab initio calculations. The developed PNCs not only have near‐unity photoluminescence quantum yield and excellent stability but also show luminance of 1175 cd m−2, current efficiency of 65.48 cd A−1, external quantum efficiency of 20.79%, wavelength of 514 nm in optimized PNC light‐emitting diodes with Cd2+ passivator and DDA ligand. The "organic–inorganic" hybrid engineering approach is completely general and can be straightforwardly applied to any combination of quaternary ammonium ligands and source of metal, which will be useful in PNC‐based optoelectronic devices such as solar cells, photodetectors, and transistors. [ABSTRACT FROM AUTHOR]

Understanding the kinetic competition between charge extraction and recombination, and how this is impacted by mobile ions, remains a key challenge in perovskite solar cells (PSCs). Here, this issue is addressed by combining operando photoluminescence (PL) measurements, which allow the measurement of real‐time PL spectra during current–voltage (J–V) scans under 1‐sun equivalent illumination, with the results of drift‐diffusion simulations. This operando PL analysis allows direct comparison between the internal performance (recombination currents and quasi‐Fermi‐level‐splitting (QFLS)) and the external performance (J–V) of a PSC during operation. Analyses of four PSCs with different electron transport materials (ETMs) quantify how a deeper ETM LUMO induces greater interfacial recombination, while a shallower LUMO impedes charge extraction. Furthermore, it is found that a low ETM mobility leads to charge accumulation in the perovskite under short‐circuit conditions. However, thisalone cannot explain the remarkably high short‐circuit QFLS of over 1 eV which is observed in all devices. Instead, drift‐diffusion simulations allow this effect to be assigned to the presence of mobile ions which screen the internal electric field at short‐circuit and lead to a reduction in the short‐circuit current density by over 2 mA cm−2 in the best device. [ABSTRACT FROM AUTHOR]

Mixed lead‐tin (Pb:Sn) halide perovskites are promising absorbers with narrow‐bandgaps (1.25–1.4 eV) suitable for high‐efficiency all‐perovskite tandem solar cells. However, solution processing of optimally thick Pb:Sn perovskite films is notoriously difficult in comparison with their neat‐Pb counterparts. This is partly due to the rapid crystallization of Sn‐based perovskites, resulting in films that have a high degree of roughness. Rougher films are harder to coat conformally with subsequent layers using solution‐based processing techniques leading to contact between the absorber and the top metal electrode in completed devices, resulting in a loss of VOC, fill factor, efficiency, and stability. Herein, this study employs a non‐continuous layer of alumina nanoparticles distributed on the surface of rough Pb:Sn perovskite films. Using this approach, the conformality of the subsequent electron‐transport layer, which is only tens of nanometres in thickness is improved. The overall maximum‐power‐point‐tracked efficiency improves by 65% and the steady‐state VOC improves by 28%. Application of the alumina nanoparticles as an interfacial buffer layer also results in highly reproducible Pb:Sn solar cell devices while simultaneously improving device stability at 65 °C under full spectrum simulated solar irradiance. Aged devices show a six‐fold improvement in stability over pristine Pb:Sn devices, increasing their lifetime to 120 h. [ABSTRACT FROM AUTHOR]

Metal halide perovskite (MHP) semiconductors have driven a revolution in optoelectronic technologies over the last decade, in particular for high‐efficiency photovoltaic applications. Low‐dimensional MHPs presenting electronic confinement have promising additional prospects in light emission and quantum technologies. However, the optimisation of such applications requires a comprehensive understanding of the nature of charge carriers and their transport mechanisms. This study employs a combination of ultrafast optical and terahertz spectroscopy to investigate phonon energies, charge‐carrier mobilities, and exciton formation in 2D (PEA)2PbI4 and (BA)2PbI4 (where PEA is phenylethylammonium and BA is butylammonium). Temperature‐dependent measurements of free charge‐carrier mobilities reveal band transport in these strongly confined semiconductors, with surprisingly high in‐plane mobilities. Enhanced charge‐phonon coupling is shown to reduce charge‐carrier mobilities in (BA)2PbI4 with respect to (PEA)2PbI4. Exciton and free charge‐carrier dynamics are disentangled by simultaneous monitoring of transient absorption and THz photoconductivity. A sustained free charge‐carrier population is observed, surpassing the Saha equation predictions even at low temperature. These findings provide new insights into the temperature‐dependent interplay of exciton and free‐carrier populations in 2D MHPs. Furthermore, such sustained free charge‐carrier population and high mobilities demonstrate the potential of these semiconductors for applications such as solar cells, transistors, and electrically driven light sources. [ABSTRACT FROM AUTHOR]

Owing to the unique chemical and electronic properties arising from 3d‐electrons, substitution with transition metal ions is one of the key routes for engineering new functionalities into materials. While this approach has been used extensively in complex metal oxide perovskites, metal halide perovskites have largely resisted facile isovalent substitution. In this work, it is demonstrated that the substitution of Co2+ into the lattice of methylammonium lead triiodide imparts magnetic behavior to the material while maintaining photovoltaic performance at low concentrations. In addition to comprehensively characterizing its magnetic properties, the Co2+ ions themselves are utilized as probes to sense the local electronic environment of Pb in the perovskite, thereby revealing the nature of their incorporation into the material. A comprehensive understanding of the effect of transition metal incorporation is provided, thereby opening the substitution gateway for developing novel functional perovskite materials and devices for future technologies. [ABSTRACT FROM AUTHOR]

Outstanding optoelectronic properties of mixed tin‐lead perovskites are the cornerstone for the development of high‐efficiency all‐perovskite tandems. However, recombination losses in Sn‐Pb perovskites still limit the performance of these perovskites, necessitating more fundamental research. Here, rubidium iodide is employed as an additive for methylammonium‐free Sn‐Pb perovskites. It is first investigated the effect of the RbI additive on the perovskite composition, crystal structure, and element distribution. Quasi‐Fermi level splitting and transient photoluminescence measurements reveal that the RbI additive reduces recombination losses and increases carrier lifetime of the perovskite films. This finding is attributed to an approximately ten‐fold reduction in the defect density following RbI treatment, as probed using constant final state yield photoelectron spectroscopy. Additionally, the concentration of Sn vacancies is also reduced, and the perovskite film becomes less p‐type both in the bulk and at the interface towards the electron contact. Thus, the conductivity for electrons increases, improving carrier extraction. As a result, the open‐circuit voltage of RbI‐containing solar cells improves by 61 mV on average, with the best efficiency >20%. This comprehensive study demonstrates that RbI is effective at reducing recombination losses and carrier trapping, paving way for a new approach to Sn‐Pb perovskite solar cell research. [ABSTRACT FROM AUTHOR]

High temperature post‐deposition annealing of hybrid lead halide perovskite thin films—typically lasting at least 10 min—dramatically limits the maximum roll‐to‐roll coating speed, which determines solar module manufacturing costs. While several approaches for "annealing‐free" perovskite solar cells (PSCs) have been demonstrated, many are of limited feasibility for scalable fabrication. Here, this work has solvent‐engineered a high vapor pressure solvent mixture of 2‐methoxy ethanol and tetrahydrofuran to deposit highly crystalline perovskite thin‐films at room temperature using gas‐quenching to remove the volatile solvents. Using this approach, this work demonstrates p‐i‐n devices with an annealing‐free MAPbI3 perovskite layer achieving stabilized power conversion efficiencies (PCEs) of up to 18.0%, compared to 18.4% for devices containing an annealed perovskite layer. This work then explores the deposition of self‐assembled molecules as the hole‐transporting layer without annealing. This work finally combines the methods to create fully annealing‐free devices having stabilized PCEs of up to 17.1%. This represents the state‐of‐the‐art for annealing‐free fabrication of PSCs with a process fully compatible with roll‐to‐roll manufacture. [ABSTRACT FROM AUTHOR]

Understanding performance losses in all‐perovskite tandem photovoltaics is crucial to accelerate advancements toward commercialization, especially since these tandem devices generally underperform in comparison to what is expected from isolated layers and single junction devices. Here, the individual sub‐cells in all‐perovskite tandem stacks are selectively characterized to disentangle the various losses. It is found that non‐radiative losses in the high‐gap subcell dominate the overall recombination in the baseline system, as well as in the majority of literature reports. Through a multi‐faceted approach, the open‐circuit voltage (VOC) of the high‐gap perovskite subcell is enhanced by 120 mV. Employing a novel (quasi) lossless indium oxide interconnect, this enables all‐perovskite tandem solar cells with 2.00 V VOC and 23.7% stabilized efficiency. Reducing transport losses as well as imperfect energy‐alignments boosts efficiencies to 25.2% and 27.0% as identified via subcell selective electro‐ and photo‐luminescence. Finally, it is shown how, having improved the VOC, improving the current density of the low‐gap absorber pushes efficiencies even further, reaching 25.9% efficiency stabilized, with an ultimate potential of 30.0% considering the bulk quality of both absorbers measured using photo‐luminescence. These insights not only show an optimization example but also a generalizable evidence‐based optimization strategy utilizing optoelectronic sub‐cell characterization. [ABSTRACT FROM AUTHOR]

Mixed‐halide perovskites offer ideal bandgaps for tandem solar cells, but photoinduced halide segregation compromises photovoltaic device performance. This study explores the influence of a hole‐transport layer, necessary for a full device, by monitoring halide segregation through in situ, concurrent X‐ray diffraction and photoluminescence measurements to disentangle compositional and optoelectronic changes. This work demonstrates that top coating FA0.83Cs0.17Pb(Br0.4I0.6)3 perovskite films with a poly(triaryl)amine (PTAA) hole‐extraction layer surprisingly leads to suppression of halide segregation because photogenerated charge carriers are rapidly trapped at interfacial defects that do not drive halide segregation. However, the generation of iodide‐enriched regions near the perovskite/PTAA interface enhances hole back‐transfer from the PTAA layer through improved energy level offsets, increasing radiative recombination losses. It is further found that while passivation with a piperidinium salt slows halide segregation in perovskite films, the addition of a PTAA top‐coating accelerates such effects, elucidating the specific nature of trap types that are able to drive the halide segregation process. This work highlights the importance of selective passivation techniques for achieving efficient and stable wide‐bandgap perovskite photovoltaic devices. [ABSTRACT FROM AUTHOR]

The use of layered, 2D perovskites can improve the stability of metal halide perovskite thin films and devices. However, the charge carrier transport properties in layered perovskites are still not fully understood. Here, the sum of the electron and hole mobilities (Σμ) in thin films of the 2D perovskite PEA2PbI4, through transient electronically contacted nanosecond‐to‐millisecond photoconductivity measurements, which are sensitive to long‐time, long‐range (micrometer length scale) transport processes is investigated. After careful analysis, accounting for both early‐time recombination and the evolution of the exciton‐to‐free‐carrier population, a long‐range mobility of 8.0 +/− 0.6 cm2 (V s)–1, which is ten times greater than the long‐range mobility of a comparable 3D material FA0.9Cs0.1PbI3 is determined. These values are compared to ultra‐fast transient time‐resolved THz photoconductivity measurements, which are sensitive to early‐time, shorter‐range (tens of nm length scale) mobilities. Mobilities of 8 and 45 cm2 (V s)–1 in the case of the PEA2PbI4 and FA0.9Cs0.1PbI3, respectively, are obtained. This previously unreported concurrence between the long‐range and short‐range mobility in a 2D material indicates that the polycrystalline thin films already have single‐crystal‐like qualities. Hence, their fundamental charge carrier transport properties should aid device performance. [ABSTRACT FROM AUTHOR]

Perovskite semiconductors differ from most inorganic and organic semiconductors due to the presence of mobile ions in the material. Although the phenomenon is intensively investigated, important questions such as the exact impact of the mobile ions on the steady‐state power conversion efficiency (PCE) and stability remain. Herein, a simple method is proposed to estimate the efficiency loss due to mobile ions via "fast‐hysteresis" measurements by preventing the perturbation of mobile ions out of their equilibrium position at fast scan speeds (≈1000 V s−1). The "ion‐free" PCE is between 1% and 3% higher than the steady‐state PCE, demonstrating the importance of ion‐induced losses, even in cells with low levels of hysteresis at typical scan speeds (≈100 mV s−1). The hysteresis over many orders of magnitude in scan speed provides important information on the effective ion diffusion constant from the peak hysteresis position. The fast‐hysteresis measurements are corroborated by transient charge extraction and capacitance measurements and numerical simulations, which confirm the experimental findings and provide important insights into the charge carrier dynamics. The proposed method to quantify PCE losses due to field screening induced by mobile ions clarifies several important experimental observations and opens up a large range of future experiments. [ABSTRACT FROM AUTHOR]

Silver‐bismuth based semiconductors represent a promising new class of materials for optoelectronic applications because of their high stability, all‐inorganic composition, and advantageous optoelectronic properties. In this study, charge‐carrier dynamics and transport properties are investigated across five compositions along the AgBiI4–CuI solid solution line (stoichiometry Cu4x(AgBi)1−xI4). The presence of a close‐packed iodide sublattice is found to provide a good backbone for general semiconducting properties across all of these materials, whose optoelectronic properties are found to improve markedly with increasing copper content, which enhances photoluminescence intensity and charge‐carrier transport. Photoluminescence and photoexcitation‐energy‐dependent terahertz photoconductivity measurements reveal that this enhanced charge‐carrier transport derives from reduced cation disorder and improved electronic connectivity owing to the presence of Cu+. Further, increased Cu+ content enhances the band curvature around the valence band maximum, resulting in lower charge‐carrier effective masses, reduced exciton binding energies, and higher mobilities. Finally, ultrafast charge‐carrier localization is observed upon pulsed photoexcitation across all compositions investigated, lowering the charge‐carrier mobility and leading to Langevin‐like bimolecular recombination. This process is concluded to be intrinsically linked to the presence of silver and bismuth, and strategies to tailor or mitigate the effect are proposed and discussed. [ABSTRACT FROM AUTHOR]

Perovskite solar cells deliver high efficiencies, but are often made from high‐cost bespoke chemicals, such as the archetypical hole‐conductor, 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxy‐phenylamine)‐9‐9′‐spirobifluorene (spiro‐OMeTAD). Herein, new charge‐transporting carbazole‐based enamine molecules are reported. The new hole conductors do not require chemical oxidation to reach high power conversion efficiencies (PCEs) when employed in n‐type‐intrinsic‐p‐type perovskite solar cells; thus, reducing the risk of moisture degrading the perovskite layer through the hydrophilicity of oxidizing additives that are typically used with conventional hole conductors. Devices made with these new undoped carbazole‐based enamines achieve comparable PCEs to those employing doped spiro‐OMeTAD, and greatly enhanced stability under 85 °C thermal aging; maintaining 83% of their peak efficiency after 1000 h, compared with spiro‐OMeTAD‐based devices that degrade to 26% of the peak PCE within 24 h. Furthermore, the carbazole‐based enamines can be synthesized without the use of organometallic catalysts and complicated purification techniques, lowering the material cost by one order of magnitude compared with spiro‐OMeTAD. As a result, we calculate that the overall manufacturing costs of future photovoltaic (PV) modules are reduced, making the levelized cost of electricity competitive with silicon PV modules. [ABSTRACT FROM AUTHOR]

Organometal perovskite single crystals have been recognized as a promising platform for high‐performance optoelectronic devices, featuring high crystallinity and stability. However, a high trap density and structural nonuniformity at the surface have been major barriers to the progress of single crystal‐based optoelectronic devices. Here, the formation of a unique nanoisland structure is reported at the surface of the facet‐controlled cuboid MAPbI3 (MA = CH3NH3+) single crystals through a cation interdiffusion process enabled by energetically vaporized CsI. The interdiffusion of mobile ions between the bulk and the surface is triggered by thermally activated CsI vapor, which reconstructs the surface that is rich in MA and CsI with reduced dangling bonds. Simultaneously, an array of Cs‐Pb‐rich nanoislands is constructed on the surface of the MAPbI3 single crystals. This newly reconstructed nanoisland surface enhances the light absorbance over 50% and increases the charge carrier mobility from 56 to 93 cm2 V−1 s−1. As confirmed by Kelvin probe force microscopy, the nanoislands form a gradient band bending that prevents recombination of excess carriers, and thus, enhances lateral carrier transport properties. This unique engineering of the single crystal surface provides a pathway towards developing high‐quality perovskite single‐crystal surface for optoelectronic applications. [ABSTRACT FROM AUTHOR]

Efficient mixed metal lead‐tin halide perovskites are essential for the development of all‐perovskite tandem solar cells, however they are currently limited by significant short‐circuit current losses despite their near optimal bandgap (≈1.25 eV). Herein, the origin of these losses is investigated, using a combination of voltage dependent photoluminescence (PL) timeseries and various charge extraction measurements. It is demonstrated that the Pb/Sn‐perovskite devices suffer from a reduction in the charge extraction efficiency within the first few seconds of operation, which leads to a loss in current and lower maximum power output. In addition, the emitted PL from the device rises on the exact same timescales due to the accumulation of electronic charges in the active layer. Using transient charge extraction measurements, it is shown that these observations cannot be explained by doping‐induced electronic charges but by the movement of mobile ions toward the perovskite/transport layer interfaces, which inhibits charge extraction due to band flattening. Finally, these findings are generalized to lead‐based perovskites, showing that the loss mechanism is universal. This elucidates the negative role mobile ions play in perovskite solar cells and paves a path toward understanding and mitigating a key loss mechanism. [ABSTRACT FROM AUTHOR]

All‐inorganic perovskite materials are attractive alternatives to organic–inorganic perovskites because of their potential for higher thermal stability. Although CsPbI3 is compositionally stable under elevated temperatures, the cubic perovskite α‐phase is thermodynamically stable only at >330 °C and the low‐temperature perovskite γ‐phase is metastable and highly susceptible to non‐perovskite δ‐phase conversion in moisture. Many methods have been reported which show that the incorporation of acid (aqueous HI) or "HPbI3"—recently shown to be dimethylammonium lead iodide (DMAPbI3) —lowers the annealing temperature required to produce the black, perovskite phase of CsPbI3. Herein, the optical and crystallographic data presented show that dimethylammonium (DMA) can successfully incorporate as an A‐site cation to replace Cs in the CsPbI3 perovskite material. This describes the stabilization and lower phase transition temperature reported in the literature when HI or HPbI3 is used as precursors for CsPbI3. The Cs–DMA alloy only forms a pure‐phase material up to ≈25% DMA; at higher concentrations, the CsPbI3 and DMAPbI3 begin to phase segregate. These alloyed materials are more stable to moisture than neat CsPbI3, but do not represent a fully inorganic perovskite material. [ABSTRACT FROM AUTHOR]

Mixed tin‐lead halide perovskites are promising low‐bandgap absorbers for all‐perovskite tandem solar cells that offer higher efficiencies than single‐junction devices. A significant barrier to higher performance and stability is the ready oxidation of tin, commonly mitigated by various additives whose impact is still poorly understood for mixed tin‐lead perovskites. Here, the effects of the commonly used SnF2 additive are revealed for FA0.83Cs0.17SnxPb1−xI3 perovskites across the full compositional lead‐tin range and SnF2 percentages of 0.1–20% of precursor tin content. SnF2 addition causes a significant reduction in the background hole density associated with tin vacancies, yielding longer photoluminescence lifetimes, decreased energetic disorder, reduced Burstein–Moss shifts, and higher charge‐carrier mobilities. Such effects are optimized for SnF2 addition of 1%, while for 5% SnF2 and above, additional nonradiative recombination pathways begin to appear. It is further found that the addition of SnF2 reduces a tetragonal distortion in the perovskite structure deriving from the presence of tin vacancies that cause strain, particularly for high tin content. The optical phonon response associated with inorganic lattice vibrations is further explored, exhibiting a shift to higher frequency and significant broadening with increasing tin fraction, in accordance with lower effective atomic metal masses and shorter phonon lifetimes. [ABSTRACT FROM AUTHOR]

Trap‐related charge‐carrier recombination fundamentally limits the performance of perovskite solar cells and other optoelectronic devices. While improved fabrication and passivation techniques have reduced trap densities, the properties of trap states and their impact on the charge‐carrier dynamics in metal‐halide perovskites are still under debate. Here, a unified model is presented of the radiative and nonradiative recombination channels in a mixed formamidinium‐cesium lead iodide perovskite, including charge‐carrier trapping, de‐trapping and accumulation, as well as higher‐order recombination mechanisms. A fast initial photoluminescence (PL) decay component observed after pulsed photogeneration is demonstrated to result from rapid localization of free charge carriers in unoccupied trap states, which may be followed by de‐trapping, or nonradiative recombination with free carriers of opposite charge. Such initial decay components are shown to be highly sensitive to remnant charge carriers that accumulate in traps under pulsed‐laser excitation, with partial trap occupation masking the trap density actually present in the material. Finally, such modelling reveals a change in trap density at the phase transition, and disentangles the radiative and nonradiative charge recombination channels present in FA0.95Cs0.05PbI3, accurately predicting the experimentally recorded PL efficiencies between 50 and 295 K, and demonstrating that bimolecular recombination is a fully radiative process. [ABSTRACT FROM AUTHOR]

Metal‐halide perovskites (MHP) are highly promising semiconductors for light‐emitting and photovoltaic applications. The colloidal synthesis of nanocrystals (NCs) is an effective approach for obtaining nearly defect‐free MHP that can be processed into inks for low‐cost, high‐performance device fabrication. However, disentangling the effects of surface ligands, morphology, and boundaries on charge‐carrier transport in thin films fabricated with these high‐quality NCs is inherently difficult. To overcome this fundamental challenge, terahertz (THz) spectroscopy is employed to optically probe the photoconductivity of CsPbBr3 NC films. The vibrational and optoelectronic properties of the NCs are compared with those of the corresponding bulk polycrystalline perovskite and significant deviations are found. Charge‐carrier mobilities and recombination rates are demonstrated to vary significantly with the NC size. Such dependences derive from the localized nature of charge carriers within NCs, with local mobilities dominating over interparticle transport. It is further shown that the colloidally synthesized NCs have distinct vibrational properties with respect to the bulk perovskite, exhibiting blue‐shifted optical phonon modes with enhanced THz absorption strength that also manifest as strong modulations in the THz photoconductivity spectra. Such fundamental insights into NC versus bulk properties will guide the optimization of nanocrystalline perovskite thin films for optoelectronic applications. [ABSTRACT FROM AUTHOR]

The production of highly efficient single‐ and multijunction metal halide perovskite (MHP) solar cells requires careful optimization of the optical and electrical properties of these devices. Here, precise control of CH3NH3PbI3 perovskite layers is demonstrated in solar cell devices through the use of dual source coevaporation. Light absorption and device performance are tracked for incorporated MHP films ranging from ≈67 nm to ≈1.4 µm thickness and transfer‐matrix optical modeling is utilized to quantify optical losses that arise from interference effects. Based on these results, a device with 19.2% steady‐state power conversion efficiency is achieved through incorporation of a perovskite film with near‐optimum predicted thickness (≈709 nm). Significantly, a clear signature of photon reabsorption is observed in perovskite films that have the same thickness (≈709 nm) as in the optimized device. Despite the positive effect of photon recycling associated with photon reabsorption, devices with thicker (>750 nm) MHP layers exhibit poor performance owing to competing nonradiative charge recombination in a "dead‐volume" of MHP. Overall, these findings demonstrate the need for fine control over MHP thickness to achieve the highest efficiency cells, and accurate consideration of photon reabsorption, optical interference, and charge transport properties. [ABSTRACT FROM AUTHOR]

The excellent optoelectronic properties demonstrated by hybrid organic/inorganic metal halide perovskites are all predicated on precisely controlling the exact nucleation and crystallization dynamics that occur during film formation. In general, high‐performance thin films are obtained by a method commonly called solvent engineering (or antisolvent quench) processing. The solvent engineering method removes excess solvent, but importantly leaves behind solvent that forms chemical adducts with the lead‐halide precursor salts. These adduct‐based precursor phases control nucleation and the growth of the polycrystalline domains. There has not yet been a comprehensive study comparing the various antisolvents used in different perovskite compositions containing cesium. In addition, there have been no reports of solvent engineering for high efficiency in all‐inorganic perovskites such as CsPbI3. In this work, inorganic perovskite composition CsPbI3 is specifically targeted and unique adducts formed between CsI and precursor solvents and antisolvents are found that have not been observed for other A‐site cation salts. These CsI adducts control nucleation more so than the PbI2–dimethyl sulfoxide (DMSO) adduct and demonstrate how the A‐site plays a significant role in crystallization. The use of methyl acetate (MeOAc) in this solvent engineering approach dictates crystallization through the formation of a CsI–MeOAc adduct and results in solar cells with a power conversion efficiency of 14.4%. [ABSTRACT FROM AUTHOR]

Mixed‐halide perovskites are essential for use in all‐perovskite or perovskite–silicon tandem solar cells due to their tunable bandgap. However, trap states and halide segregation currently present the two main challenges for efficient mixed‐halide perovskite technologies. Here photoluminescence techniques are used to study trap states and halide segregation in full mixed‐halide perovskite photovoltaic devices. This work identifies three distinct defect species in the perovskite material: a charged, mobile defect that traps charge‐carriers in the perovskite, a charge‐neutral defect that induces halide segregation, and a charged, mobile defect that screens the perovskite from external electric fields. These three defects are proposed to be MA+ interstitials, crystal distortions, and halide vacancies and/or interstitials, respectively. Finally, external quantum efficiency measurements show that photoexcited charge‐carriers can be extracted from the iodide‐rich low‐bandgap regions of the phase‐segregated perovskite formed under illumination, suggesting the existence of charge‐carrier percolation pathways through grain boundaries where phase‐segregation may occur. [ABSTRACT FROM AUTHOR]

Recently, Ruddlesden-Popper perovskites (RPPs) have attracted increasing interests due to their promising stability. However, the efficiency of solar cells based on RPPs is much lower than that based on 3D perovskites, mainly attributed to their poor charge transport. Herein, a simple yet universal method for controlling the quality of RPP films by a synergistic effect of two additives in the precursor solution is presented. RPP films achieved by this method show (a) high quality with uniform morphology, enhanced crystallinity, and reduced density of sub-bandgap states, (b) vertically oriented perovskite frameworks that facilitate efficient charge transport, and (c) type-II band alignment that favors self-driven charge separation. Consequently, a hysteresis-free RPP solar cell with a power conversion efficiency exceeding 12%, which is much higher than that of the control device (1.5%), is achieved. The findings will spur new developments in the fabrication of high-quality, aligned, and graded RPP films essential for realizing efficient and stable perovskite solar cells. [ABSTRACT FROM AUTHOR]

Abstract: Recently, Ruddlesden–Popper perovskites (RPPs) have attracted increasing interests due to their promising stability. However, the efficiency of solar cells based on RPPs is much lower than that based on 3D perovskites, mainly attributed to their poor charge transport. Herein, a simple yet universal method for controlling the quality of RPP films by a synergistic effect of two additives in the precursor solution is presented. RPP films achieved by this method show (a) high quality with uniform morphology, enhanced crystallinity, and reduced density of sub‐bandgap states, (b) vertically oriented perovskite frameworks that facilitate efficient charge transport, and (c) type‐II band alignment that favors self‐driven charge separation. Consequently, a hysteresis‐free RPP solar cell with a power conversion efficiency exceeding 12%, which is much higher than that of the control device (1.5%), is achieved. The findings will spur new developments in the fabrication of high‐quality, aligned, and graded RPP films essential for realizing efficient and stable perovskite solar cells. [ABSTRACT FROM AUTHOR]

Abstract: Perovskite solar cells have shown a meteoric rise of power conversion efficiency and a steady pace of improvements in their stability of operation. Such rapid progress has triggered research into approaches that can boost efficiencies beyond the Shockley–Queisser limit stipulated for a single‐junction cell under normal solar illumination conditions. The tandem solar cell architecture is one concept here that has recently been successfully implemented. However, the approach of solar concentration has not been sufficiently explored so far for perovskite photovoltaics, despite its frequent use in the area of inorganic semiconductor solar cells. Here, the prospects of hybrid perovskites are assessed for use in concentrator solar cells. Solar cell performance parameters are theoretically predicted as a function of solar concentration levels, based on representative assumptions of charge‐carrier recombination and extraction rates in the device. It is demonstrated that perovskite solar cells can fundamentally exhibit appreciably higher energy‐conversion efficiencies under solar concentration, where they are able to exceed the Shockley–Queisser limit and exhibit strongly elevated open‐circuit voltages. It is therefore concluded that sufficient material and device stability under increased illumination levels will be the only significant challenge to perovskite concentrator solar cell applications. [ABSTRACT FROM AUTHOR]

Abstract: Novel nonspiro, fluorene‐based, small‐molecule hole transporting materials (HTMs) V1050 and V1061 are designed and synthesized using a facile three‐step synthetic route. The synthesized compounds exhibit amorphous nature with a high glass transition temperature, a good solubility, and decent thermal stability. The planar perovskite solar cells (PSCs) employing V1050 generated an excellent power conversion efficiency of 18.3%, which is comparable to 18.9% obtained with the state‐of‐the‐art Spiro‐OMeTAD. Importantly, the devices based on V1050 and V1061 show better stability compared to devices based on Spiro‐OMeTAD when aged without any encapsulation under uncontrolled humidity conditions (relative humidity around 60%) in the dark and under continuous full sun illumination. [ABSTRACT FROM AUTHOR]

Abstract: Despite fast development of hybrid perovskite solar cells, there are many fundamental questions related to the perovskite film which remain open. For example, there are contradicting theoretical reports on the role of the organic methylammonium cation (CH3NH3+) in the methylammonium lead triiodide (CH3NH3PbI3) perovskite film. From one side it is reported that the organic cation does not contribute to electronic structure of the CH3NH3PbI3 film. From the other side, valence band maximum fluctuations, dependent on the CH3NH3+ rotation, have been theoretically predicted. The resonant X‐ray photoelectron spectroscopy results reported here show experimental evidence of nitrogen contribution to the CH3NH3PbI3 electronic structure. Moreover, the observed strong resonances of nitrogen with the I 5s and the Pb 5d‐6s levels indicate that the CH3NH3PbI3 valence band is extended up to ≈18 eV below the Fermi energy, and therefore one should also consider these shallow core levels while modeling its electronic structure. [ABSTRACT FROM AUTHOR]

Abstract: The unprecedented speed at which the performance of solar cells based on solution‐processed perovskite thin films has increased, in some ways, appears to violate conventional understanding of device optimization. The relatively poor coverage of the TiO2 electron transport layer by the absorber should cause shunting of the cell. This, however, is not the case. In this paper, it is attempted to explain this “discrepancy.” Insights into coverage, morphology, local elemental composition, and spatially resolved electronic structure of CH3NH3PbI(3−x)Clx perovskite absorbers wet‐chemically deposited on planar compact TiO2 electron transport material (ETM) are revealed. Microscopy images indicate an incomplete coverage of the ETM. Depending on the degree of coverage, a variation in iodine oxidation and metallic lead formation is found. With the electronic structure of the absorber and the ETM established experimentally and taking literature on the commonly used hole transport material spiro‐MeOTAD into account, it is revealed that excellent charge selectivity occurs at the interfaces between the absorber and both the hole and electron transport layers. It can also be surmised that, crucially, any direct interface between the TiO2 and spiro‐MeOTAD would be characterized by a large recombination barrier preventing shunts; to some extent minimizing the negative effects of absorber pinholes. [ABSTRACT FROM AUTHOR]

This paper investigates the impact of microstructure on the degradation rate of methylammonium lead triiodide (MAPbI3) perovskite films upon exposure to light and oxygen. By comparing the oxygen induced degradation of perovskite films of different microstructure-fabricated using either a lead acetate trihydrate precursor or a solvent engineering technique-it is demonstrated that films with larger and more uniform grains and better electronic quality show a significantly reduced degradation compared to films with smaller, more irregular grains. The effect of degradation on the optical, compositional, and microstructural properties of the perovskite layers is characterized and it is demonstrated that oxygen induced degradation is initiated at the layer surface and grain boundaries. It is found that under illumination, irreversible degradation can occur at oxygen levels as low as 1%, suggesting that degradation can commence already during the device fabrication stage. Finally, this work establishes that improved thin-film microstructure, with large uniform grains and a low density of defects, is a prerequisite for enhanced stability necessary in order to make MAPbI3 a promising long lived and low cost alternative for future photovoltaic applications. [ABSTRACT FROM AUTHOR]

Organohalide perovskites have emerged as promising light-sensing materials because of their superior optoelectronic properties and low-cost processing methods. Recently, perovskite-based photodetectors have successfully been demonstrated as both broadband and narrowband varieties. However, the photodetection bandwidth in perovskite-based photodetectors has so far been limited to the near-infrared regime owing to the relatively wide band gap of hybrid organohalide perovskites. In particular, short-wavelength infrared photodiodes operating beyond 1 µm have not yet been realized with organohalide perovskites. In this study, narrow band gap organic dyes are combined with hybrid perovskites to form composite films as active photoresponsive layers. Tuning the dye loading allows for optimization of the spectral response characteristics and excellent charge-carrier mobilities near 11 cm2 V−1 s−1, suggesting that these composites combine the light-absorbing properties or IR dyes with the outstanding charge-extraction characteristics of the perovskite. This study demonstrates the first perovskite photodiodes with deep near-infrared and short-wavelength infrared response that extends as far as 1.6 µm. All devices are solution-processed and exhibit relatively high responsivity, low dark current, and fast response at room temperature, making this approach highly attractive for next-generation light-detection techniques. [ABSTRACT FROM AUTHOR]

Traps limit the photovoltaic efficiency and affect the charge transport of optoelectronic devices based on hybrid lead halide perovskites. Understanding the nature and energy scale of these trap states is therefore crucial for the development and optimization of solar cell and laser technology based on these materials. Here, the low-temperature photoluminescence of formamidinium lead triiodide (HC(NH2)2PbI3) is investigated. A power-law time dependence in the emission intensity and an additional low-energy emission peak that exhibits an anomalous relative Stokes shift are observed. Using a rate-equation model and a Monte Carlo simulation, it is revealed that both phenomena arise from an exponential trap-density tail with characteristic energy scale of ≈3 meV. Charge-carrier recombination from sites deep within the tail is found to cause emission with energy downshifted by up to several tens of meV. Hence, such phenomena may in part be responsible for open-circuit voltage losses commonly observed in these materials. In this high-quality hybrid perovskite, trap states thus predominantly comprise a continuum of energetic levels (associated with disorder) rather than discrete trap energy levels (associated, e.g., with elemental vacancies). Hybrid perovskites may therefore be viewed as classic semiconductors whose band-structure picture is moderated by a modest degree of energetic disorder. [ABSTRACT FROM AUTHOR]

The remarkable optoelectronic properties of hybrid halide perovskite absorbers have, in the past years, made the perovskite solar cell one of the most promising emerging photovoltaic technologies. The charge collecting layers are essential parts of this type of solar cell. Carbon nanotubes have emerged as a potential candidate to take on this role. Equipped with a range of highly beneficial properties including excellent charge transport characteristics, chemical inertness, as well as mechanical robustness, carbon nanotubes are able to both efficiently extract photogenerated charges, and improve the resilience and stability of a perovskite solar cell. Here, a concise overview of the current state-of-the-art of perovskite solar cells, in which carbon nanotubes are incorporated as a charge conduction layer, is provided. [ABSTRACT FROM AUTHOR]

Perovskite solar cells are considered a promising technology for solar-energy conversion, with power conversion efficiencies currently exceeding 20 %. In most of the reported devices, Spiro-OMeTAD is used for positive-charge extraction and transport layer. Although a number of alternative hole-transporting materials with different aromatic or heteroaromatic fragments have already been synthesized, a cheap and well-performing hole-transporting material is still in high demand. In this work, a two-step synthesis of a carbazole-based hole-transporting material is presented. Synthesized compounds exhibited amorphous nature, good solubility and thermal stability. The perovskite solar cells employing the newly synthesized material generated a power conversion efficiency of 16.5 % which is slightly lower than that obtained with Spiro-OMeTAD (17.5 %). The low-cost synthesis and high performance makes our hole-transport material promising for applications in perovskite-based optoelectronic devices. [ABSTRACT FROM AUTHOR]

The article offers information on the hysteresis in the current–voltage characteristics of vapor‐deposited perovskite solar cells. Topics discussed include usage of interface engineering in producing crystalline perovskite material; information on planar heterojunction solar cells; and the chemical vapor deposition process.

The majority of hole-transporting layers used in n-i-p perovskite solar cells contain 4- tert butylpyridine ( tBP). High power-conversion efficiencies and, in particular, good steady-state performance appears to be contingent on the inclusion of this additive. On the quest to improve the steady state efficiencies of the carbon nanotube-based hole-transporter system, this study has found that the presence of tBP results in an extraordinary improvement in the performance of these devices. By deconstructing a prototypical device and investigating the effect of tBP on each individual layer, the results of this study indicate that this performance enhancement must be due to a direct chemical interaction between tBP and the perovskite material. This study proposes that tBP serves to p-dope the perovskite layer and investigates this theory with poling and work function measurements. [ABSTRACT FROM AUTHOR]