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This study reports on photoelectrical performance of the long‐wave infrared HgCdTe high operating temperature (200–230 K) detector for the fast response time operating under unbiased conditions. The detailed analysis of the response time as a function of device architecture was conducted pointing out optimal working conditions and structure. The response time of the long‐wave (xCd = 0.19) HgCdTe detector for temperatures reached by thermoelectrical cooling (200–230 K) was estimated at the level of τs < 0.6 ns for unbiased condition while responsivity Ri ∼ 1.8 A/W and detectivity was assessed at the level of D* ∼ 1.6 × 1010 cm Hz1/2 /W. It was shown that extra series resistance Rseries < 10 Ω (resistance–capacitance time constant) plays a decisive role in order to reach τs < 1 ns meaning that device processing is much more important rather than fundamental limitations imposed by physics. [ABSTRACT FROM AUTHOR]