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In0.17Al0.83N/GaN high‐electron‐mobility transistor (HEMT) using GaN‐on‐Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X‐Ray diffraction and micro‐Raman spectroscopy have demonstrated a 5% reduction in "a lattice strain," which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Ω □−1. A 120 nm gate‐length device achieves a peak fT up to 96 GHz which yields a fT × Lg value of 11.5 GHz μm, which compares favorably with reported GaN‐based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm‐wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal–oxide–semiconductor technology that opens up the potential for integrated high‐power and RF applications, enabling more compact and efficient systems. [ABSTRACT FROM AUTHOR]

AlGaN/GaN high electron mobility transistors (HEMTs) on chemical vapor deposited (CVD) diamond with different gate–drain spacings (Lgd) are fabricated, and off‐state breakdown voltage (BVgd) along with a dynamic specific on‐resistance (Dyn.‐Ron,sp) is measured. Ron,sp is obtained in the range of 0.32–0.98 mΩ cm2 for HEMTs with Lgd of 2–8 μm. The HEMTs exhibit a BVgd of 415 V (Lgd = 8 μm) with a maximum lateral breakdown strength of 0.72 MV cm−1. The power device figure of merit (FOM) of ≈0.18 GW cm−2 is obtained from HEMTs with Lgd of 8 μm. The HEMTs exhibit about 60% of higher FOM when compared with the reported HEMTs on CVD diamond (≈0.11 GW cm−2). This is mainly due to the improvement of Ron,sp through the reduction of contact resistance (Rc) and sheet resistance (Rsh). The Dyn.‐Ron,sp is estimated from pulsed (pulse width/period = 200 ns/1 ms) ID–VD characteristics, which is comparable with the static Ron,sp. These improved results of the fabricated AlGaN/GaN HEMTs on CVD diamond make it a promising candidate for high‐voltage power switching device applications. [ABSTRACT FROM AUTHOR]

This work investigates the multi-energy ultra-heavy 131Xe+ ion implantation for the realization of planar AlGaN/GaN high electron mobility transistors (HEMTs) on Si. The 131Xe+ implant-isolation in AlGaN/GaN HEMT structure exhibited an order of magnitude lower buffer leakage current as well as an order of magnitude higher ON/OFF current ratio ( Ion/Ioff) and sheet resistance ( Rsh) when compared with conventional mesa-isolation process. The isolated region by 131Xe+ implantation demonstrated good thermal stability in the isochronal annealing up to 800 ºC. A stable buffer breakdown voltage with and without Si3N4 passivation were observed using implant-isolation. The AlGaN/GaN HEMTs isolated by 131Xe+ implantation exhibited good pinch-off characteristics with one order of magnitude lower OFF-state source-drain leakage and reverse gate leakage current and improved OFF-state breakdown voltages by ∼106-128 V as compared to the mesa-isolated devices. An activation energy of 0.513 eV was extracted, which denotes the energy level of lattice damage by 131Xe+ ions. These results indicate that multi-energy implant-isolation by ultra-heavy 131Xe+ ions is promising for the fabrication of planar AlGaN/GaN HEMTs with improved device characteristics. [ABSTRACT FROM AUTHOR]