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ABSTRACT This letter reports the highest fundamental oscillator operating frequency of 120 GHz for gallium arsenide (GaAs)-based Gunn diode. The letter describes the design, fabrication, and test of the aluminum gallium arsenide (AlGaAs)/(GaAs) planar Gunn diode with an anode to cathode separation of 1 μm and channel width of 120 μm. The planar Gunn diode was designed with an integrated series inductor in coplanar waveguide format. The experimental results showed that the planar Gunn diode oscillated at a fundamental frequency of 120.47 GHz with an RF output power −9.14 dBm. This is highest fundamental frequency and power recorded for a GaAs-based Gunn diode. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2449-2451, 2014 [ABSTRACT FROM AUTHOR]

ABSTRACT A novel method of introducing a notch at a point of high magnetic field in a coplanar waveguide (cpw) radial and diamond stub resonator to increase the quality factor (Q) was analyzed. For comparison, both radial- and diamond-shaped cpw resonators with and without notches were fabricated on gallium arsenide (GaAs) semi-insulating substrate at the James Watt Nanofabrication Centre and tested in the milli-metric laboratory at University of Glasgow. The notch increased the loaded Q factor of the diamond resonator by approximately 28% and good agreement was obtained between the measured and simulated loaded Q for both cpw radial and diamond resonators. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1323-1325, 2015 [ABSTRACT FROM AUTHOR]