1. Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates.
- Author
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Reddy, Pramod, Mecouch, Will, Hayden Breckenridge, M., Khachariya, Dolar, Bagheri, Pegah, Hyun Kim, Ji, Guan, Yan, Mita, Seiji, Moody, Baxter, Tweedie, James, Pavlidis, Spyridon, Kirste, Ronny, Kohn, Erhard, Collazo, Ramon, and Sitar, Zlatko
- Subjects
AVALANCHE photodiodes ,QUANTUM efficiency ,SINGLE crystals ,SAPPHIRES - Abstract
Herein, Al‐rich AlGaN‐based avalanche photodiodes (APDs) grown on single crystal AlN substrates high ultraviolet‐C sensitivity for λ < 200 nm are fabricated, while exhibiting blindness to λ > 250 nm. A maximum quantum efficiency of 68% and peak gain of 320 000 are estimated resulting in a figure of merit of ≈220 000 in devices with ϕ = 100 μm. As expected, a decrease in gain with increase in device size is observed and a gain of ≈20 000 is estimated in devices with ϕ = 400 μm. Overall, two orders of magnitude higher performance are observed in APDs on single crystal AlN substrates compared to those on sapphire. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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