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Commercially available hydride vapor phase epitaxy gallium nitride (GaN) is characterized with the aim to correlate the oxygen and hydrogen secondary ion mass spectrometry profiles of a GaN wafer with the electrical properties of the sample. A GaN layer model, including doping profile and mobility, is derived, utilizing electrical (capacitance-voltage, Hall), structural (high resolution X-ray diffraction) and optical (polarized infrared spectroscopy) methods. Oxygen and hydrogen are easily incorporated during hydride vapor phase epitaxy growth of GaN. Oxygen is an n-type dopant in GaN, whereas hydrogen may passivate some of the donors. Electrical and optical properties correlate with a low defect concentration top GaN layer and a high defect concentration GaN interlayer. [ABSTRACT FROM AUTHOR]