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195 results on '"Magnetic tunnelling"'

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1. Unraveling the Interplay Between Memristive and Magnetoresistive Behaviors in LaCoO3/SrTiO3 Superlattice‐Based Neural Synaptic Devices.

2. Homeothermic P‐Bit Computing Hardware with Stochastic Operations Beyond Limit of Non‐Stochastic Materials.

3. Low‐Energy Spin Manipulation Using Ferromagnetism.

4. Field‐Free Perpendicular Magnetic Memory Driven by Out‐of‐Plane Spin‐Orbit Torques.

5. A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses.

6. Non‐Volatile Analog Control and Reconfiguration of a Vortex Nano‐Oscillator Frequency.

7. Tunable High‐Temperature Tunneling Magnetoresistance in All‐van der Waals Antiferromagnet/Semiconductor/Ferromagnet Junctions.

8. Effect of Ferromagnet/Organic Semiconductor Interface Defect States on Tunnel Magnetoresistance of Hybrid Magnetic Tunnel Junctions.

9. All van der Waals Three‐Terminal SOT‐MRAM Realized by Topological Ferromagnet Fe3GeTe2.

10. A Multiphysical Field Dynamic Behavioral Model of Perpendicular STT‐MTJ.

11. Probability‐Distribution‐Configurable True Random Number Generators Based on Spin‐Orbit Torque Magnetic Tunnel Junctions.

12. Spin‐Transfer‐Torque Magnetic Tunnel Junction Nonlinear In‐Sensor Computing Synapse for Improving the Performance of the Feedforward Neural Network.

13. Room‐temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures.

14. Structural, dielectric, magnetic, optical, and electrical properties of double‐perovskite Sr1.5Mn0.5Fe0.5Hf1.5O6 oxides.

15. Exchange Bias Modulated by Antiferromagnetic Spin‐Flop Transition in 2D Van der Waals Heterostructures.

16. Spin Coupling in the Initial Stages of the Zinc‐Blende MnN Growth on the CrN (111) Surface.

17. Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys.

18. A Device Model for Achieving Sizable and Tunable Tunneling Magnetoresistance Using Two‐Dimensional Materials InX (X = O, Se) without Hetero‐Interface.

19. Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties.

20. Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions.

21. Deterministic Current‐Induced Perpendicular Switching in Epitaxial Co/Pt Layers without an External Field.

22. Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage‐Controlled Magnetic Tunnel Junctions.

23. A low‐power charge‐based integrate‐and‐fire circuit for binarized‐spiking neural network.

24. A high‐capacity and nonvolatile spintronic associative memory hardware accelerator.

25. Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective.

26. Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction.

27. Realization of Zero‐Field Skyrmions in a Magnetic Tunnel Junction.

28. Gate‐tunable spin valve effect in Fe3GeTe2‐based van der Waals heterostructures.

29. Physical Vapor Transport Growth of Antiferromagnetic CrCl3 Flakes Down to Monolayer Thickness.

30. Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect.

31. Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel Junction.

32. Perpendicularly Magnetized MnxGa-Based Magnetic Tunnel Junctions: Materials, Mechanisms, Performances, and Potential Applications.

33. Perspectives for the Growth of Epitaxial 2D van der Waals Layers with an Emphasis on Ferromagnetic Metals for Spintronics.

34. Shape‐Dependent Multi‐Weight Magnetic Artificial Synapses for Neuromorphic Computing.

35. Synergy of Spin‐Orbit Torque and Built‐In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons.

36. Ultralow Current Switching of Synthetic‐Antiferromagnetic Magnetic Tunnel Junctions Via Electric‐Field Assisted by Spin–Orbit Torque.

37. Spin Polarized Electronic Transport and Photocurrent in Chiral Methionine Molecule via Magnetic Tunnel Junction Model from First Principles.

38. Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing using Multistate Domain Wall Spin–Orbit Torque Device.

39. Resistivity and Tunnel Magnetoresistance in Double‐Perovskite Strontium Ferromolybdate Ceramics.

40. Electrical Manipulation of Exchange Bias in an Antiferromagnet/Ferromagnet‐Based Device via Spin–Orbit Torque.

41. Design of a novel non‐volatile hybrid spintronic true random number generator.

42. High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network.

43. Field‐Free Spin–Orbit Torque Switching in Perpendicularly Magnetized Synthetic Antiferromagnets.

44. Exchange Coupling in Synthetic Anion‐Engineered Chromia Heterostructures.

45. Elucidating the effect of Vx doped LaFe1−xO3 for advanced optical, spintronic, and thermoelectric devices.

46. RKKY Exchange Bias Mediated Ultrafast All‐Optical Switching of a Ferromagnet.

47. Exotic Spintronic Properties of Transition‐Metal Monolayers on Graphyne.

48. Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias.

49. Tuning the High‐Efficiency Field‐Free Current‐Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content.

50. Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Using First Principles.

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