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The context of long noncoding RNAs (lncRNAs) contains many unannotated open reading frames (ORFs). These ORFs potentially encode novel proteins or peptides with crucial roles in various human cancers, yet the translational potential of these lncRNAs and the functions of the protein products remain largely unexplored, especially in gastric cancer (GC). In this study, a comprehensive analysis is performed and identified a GC associated lncRNA known as HCP5, which contains a non‐canonical ORF. Further analysis showed that HCP5‐132aa, a microprotein encoded by HCP5 harboring this ORF, is highly expressed in GC cells and tissues, and can promote the proliferation of GC cells by inhibiting ferroptosis. Mechanistically, HCP5‐132aa enhances the interaction between YBX1 and ELAVL1, facilitates recognition of YBX1 at the m5C site in the 3′UTR of SLC7A11 and G6PD mRNA, and preserves their stability via ELAVL1. By employing a Cas9/sgRNA delivery system with AAV in vivo, effectively knocked out the HCP5‐132aa and inhibition of tumor growth in a patient‐derived xenograft model are achieved. These findings demonstrate that the novel protein HCP5‐132aa, derived from lncRNA HCP5, mediates the repression of ferroptosis, thereby driving the progression of GC and identifying a new potential therapeutic target for its treatment. [ABSTRACT FROM AUTHOR]

Since Si‐based Moore's law is physically limited, 2D semiconductors are proposed as successors to continue shrinking the transistor size for more Moore electronics. However, limited by experimental technology bottlenecks, the theoretical predicted superiorities of the 2D transistors over the state‐of‐the‐art Si transistors have been lacking concrete evidence for a decade. In this review, recent exciting experimental breakthroughs for 2D transistors are presented, including gate length miniaturization to a sub‐1 nm limit, electrode contact optimization to the resistance quantum limit, high‐quality dielectric fabrication with an equivalent oxide thickness to sub‐0.5 nm, novel architecture form (2D fin field‐effect transistor), and back‐end‐of‐line integration of directly grown 2D materials on Si complementary metal‐oxide‐semiconductor circuits. Remarkably, an ultrashort channel, Ohmic contact, ballistic transport, and ultrathin dielectric layer are simultaneously satisfied in the 2D InSe transistor, and device performances approaching the theoretical limit are observed. The measured key figures of merit of the ideal 2D InSe transistor are comparable to or even surpass those of the Si transistors. Finally, the challenges and outlook on more Moore electronics based on 2D transistors are highlighted. [ABSTRACT FROM AUTHOR]

Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron mobility µe than silicon but suffers from a much lower hole mobility µh (µe/µh = 80), thus unsuited to CMOS application with a single material. Through the accurate ab initio quantum‐transport simulations, the performance gap between the NMOS and PMOS is significantly narrowed is predicted and even vanished in the sub‐2‐nm‐diameter gate‐all‐around (GAA) InAs nanowires (NW) FETs because the inversion of the light and heavy hole bands occurs when the diameter is shorter than 3 nm. It is further proposed several feasible strategies for further improving the performance symmetry in the GAA InAs NWFETs. Short‐channel effects are effectively depressed in the symmetric n‐ and p‐type GAA InAs NWFETs till the gate length is scaled down to 2 nm according to the standards of the International Technology Roadmap for Semiconductors. Therefore, the ultrasmall GAA InAs NWFETs possess tremendous prospects in CMOS integrated circuits. [ABSTRACT FROM AUTHOR]

For threatened marine megafauna, such as the Indo‐Pacific humpback dolphin (Sousa chinensis), sound conservation planning should aim to ensure demographic and ecological persistence of populations. One method to address this challenge is through ecosystem‐based conservation planning (ECP) based on threatened marine megafauna distribution, biodiversity richness, and ecosystem functionality.ECP exercises for the Indo‐Pacific humpback dolphin in Chinese and adjacent northern Vietnamese waters were conducted based on the Indo‐Pacific humpback dolphin distribution, Hill‐2 biodiversity index, and marine net primary productivity. Habitat protection priorities were scored using the program MARXAN and were used to identify special areas for conservation (SACs) for the Indo‐Pacific humpback dolphin.To ensure the minimal risk of local extinction, the SACs enclosed a total of 26,858 km2 of waters, accounting for 49.9% of core habitats of the Indo‐Pacific humpback dolphin and 24.3% of the IUCN Red List species in the study region. To enclose 30% of biodiversity richness and ecosystem functionality, a total of 40,179 km2 SACs was required.In the context of threatened marine megafauna conservation, megafauna distribution can be used to highlight focal areas, while information on biodiversity richness and ecosystem functionality should be factored in. Using surrogates with different ecological niches would be a better tactic to ensure sufficient protection coverage by minimizing the omission bias.The conservation of threatened marine megafauna in coastal and estuarine waters shares similar objectives with global marine biodiversity conservation. The challenges to conduct ECP exercises come from data scarcity and poor data quality in representing distributions of biodiversity features. A certified open‐access database that shares survey effort, occurrence, population density, and habitat mapping at national and local scales is recommended. Such a result requires national planning, investment, and policing. [ABSTRACT FROM AUTHOR]

A thermodynamically and kinetically stable 3D hierarchical carbonaceous nanostructure is constructed to examine its potential as an anode for sodium‐ion batteries (SIBs). Heptagonal and quadrilateral staggered carbon rings are formed where the graphite layers and the CNT interconnect vertically. Based on first‐principles calculations, such a graphite‐CNT hybrid with expanded interlayer spacing allows effective binding to Na atoms and contributes a high specific capacity of 324.3 mAh g−1. It maintains a great electronic conductivity for both pristine and Na‐adsorbed graphite‐CNT along the expanded graphite layers, and constructs a 3D electronic transport network when a large number of Na atoms are adsorbed. This hierarchical nanostructure predicts a fast inner 3D Na‐ion transport network, with energy barriers of 0.56 and 0.50 eV along the expanded graphite layer and the CNT channel, respectively. This research manifests the feasibility of obtaining well‐performed graphite‐based anodes for SIBs through purposeful microcosmic morphology modification. [ABSTRACT FROM AUTHOR]

The emerging two‐dimensional (2D) tellurium (tellurene) has attracted much attention due to its high carrier transportability and prominent air stability. Micrometer‐scale bilayer (BL) tellurene field‐effect transistors (FETs) are successfully fabricated with a large on/off current ratio of about 105. Here, the transport properties of both the n‐ and p‐type double‐gated sub‐10 nm BL tellurene metal‐oxide‐semiconductor FETs (MOSFETs) are systematically explored by using ab initio quantum transport simulation. The optimized 5, 7, and 9 nm gate‐length p‐type x‐ and y‐directed BL tellurene MOSFETs with a proper underlap and negative capacitance dielectric can meet or nearly meet the on‐state current, delay time, power dissipation, and energy‐delay product requirements of the International Technology Roadmap for Semiconductors for the 2022–2028 horizons for high‐performance applications. This renders BL tellurene to join the air‐stable channel candidate for the p‐type sub‐10 nm transistors. [ABSTRACT FROM AUTHOR]

The factors affecting hemoglobin (Hb) oxidation in its short‐ and long‐term storage were investigated. Porcine Hb with different levels of oxygen saturation was stored at 25°C or 4°C for 40 days. The methemoglobin (metHb) content increased rapidly when Hb was at half saturation with oxygen at 4°C, increased gradually with the increase in Hb oxygenation or deoxygenation, and was almost unchanged when Hb was highly oxygenated or deoxygenated. The Hb oxidation was more intense when stored at 25°C. This indicated that highly oxygenated or deoxygenated Hb can be stored short term at 4°C. The accelerated test showed that metHb content was almost unchanged when Hb was highly deoxygenated and stored at 37°C for 7 days; however, the metHb content rapidly increased when Hb was highly oxygenated and stored at 37°C, which indicated that only highly deoxygenated Hb is suitable for long‐term storage. Then, the long‐term oxidation stability of highly deoxygenated Hb and polymerized hemoglobin was verified; the metHb content of both did not show significant changes at 4°C for 18 months. Moreover, the results in this work indicated that a temperature increasing from 20 to 40°C clearly increased the partial oxygen pressure (P50), which represents decreased oxygen affinity and is beneficial to deoxygenation. Furthermore, P50 was increased when the pH decreased from 9 to 7. Therefore, we concluded that the appropriate high temperature and neutral condition in vitro are conducive to reducing the oxygen affinity of Hb to achieve efficient deoxygenation, which could promote the development of hemoglobin‐based oxygen carriers. [ABSTRACT FROM AUTHOR]

ABSTRACT The development of the salivary gland (SG) is a complex process regulated by multiple signaling pathways in a spatiotemporal manner. Various stem/progenitor cell populations and respective cell lineages are involved in SG morphogenesis and postnatal maturation. Leucine‐rich repeats and immunoglobulin‐like domains 1 (LRIG1) has been identified as critical regulator of stem cells by virtue of its ability to restrain stem cell proliferation, indicating its potential role in the development of several maxillofacial tissues and in the regulation of the quiescence in adult tissues. This study aimed to investigate the expression pattern and functions of Lrig1 in the developing and mature murine submandibular gland (SMG). To accomplish this objective, we collected the murine SMGs at different developmental stages and examined the expression pattern and levels of Lrig1 with qRT‐PCR, immunofluorescent (IF) and RNAscope staining. We observed that Lrig1 was widely distributed in both epithelial and mesenchymal cells throughout embryonic and neonatal stages, with specific localization in the more mature epithelium. Furthermore, through single‐cell RNA sequencing (scRNA‐Seq) and IF techniques, we confirmed that LRIG1 is highly concentrated along with SMG progenitor markers in acinar and basal cells. Additionally, transcription factors (TFs) that could regulate LRIG1 expression were predicted from JASPAR databases and their motifs were identified by the UCSC browser's BLAT tool. Gene Ontology (GO) enrichment analyses on postnatal day 5 (PN5) scRNA‐Seq data also provided insights into Lrig1's functions in SG development. Finally, we also conducted in vitro experiments on a human salivary gland (HSG) cell line to assess LRIG1's impact on HSG proliferation and migration, as well as its potential upstream regulatory TFs. Taken together, our study reveals that LRIG1 plays a vital role in SG development. [ABSTRACT FROM AUTHOR]

Due to high carrier mobility and excellent air stability, emerging 2D semiconducting Bi2O2Se is attracting much attention as a potential channel candidate for the next‐generation field effect transistor (FETs). Although the fabricated bilayer (BL) and few layers Bi2O2Se FETs exhibit a large current on/off ratio (>106) and a near‐ideal subthreshold swing value (≈65 mV dec−1), the performance limit of ultrashort channel Bi2O2Se FET is obscure. Here the ballistic performance upper limit of the sub 10 nm BL Bi2O2Se metal‐oxide‐semiconductor FETs (MOSFETs) is simulated for the first time by using ab initio quantum transport simulations. The optimized BL Bi2O2Se n‐type MOSFETs can fulfill the high performance device requirements on the on‐state current, delay time, and power dissipation of the International Technology Roadmap for Semiconductors in 2028 until the gate length is scaled down to 5 nm. Therefore, Moore's law can be extended to 5 nm by taking BL Bi2O2Se as the channel. The device performance of sub 10 nm Lg bilayer (BL) Bi2O2Se metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) is studied using ab initio quantum transport simulations. With the resort of underlap, the BL Bi2O2Se can fulfill the high performance requirements of International Technology Roadmap for Semiconductors 2013 edition until the gate length is scaled down to 5 nm. [ABSTRACT FROM AUTHOR]