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A stretchable electronic substrate with strategically positioned rigid and soft islands offers a significant platform to overcome the limitations of current stretchable substrates. This design facilitates the integration of conventional rigid electroactive materials into high-performance stretchable electronics. This study introduces a photo-crosslinkable, transparent elastomer substrate based on acrylates. When exposed to UV irradiation, it undergoes selective crosslinking (with crosslinking density and modulus depending on the number of crosslinkers); it can achieve a modulus increase of up to 38 000%. Rigid regions of specific shapes and sizes can be created using a photomask, while soft regions remain intact for expansion during stretching. The substrate is used to produce a capacitive strain/strain-insensitive pressure (SIP) sensor in which rigid islands act as the dielectric layer of the capacitor; sensitivity to external stimuli is modulated by the modulus of the rigid islands. In addition, a high-efficiency SIP sensor (SIPS) employing an electrospun dielectric layer, which amplifies the pressure sensitivity by 780-fold, is developed, ensuring a constant low strain sensitivity. [ABSTRACT FROM AUTHOR]

Siloxane-containing materials are a large and important class of organic-inorganic hybrids. In this report, a practical variation of the Suzuki polymerization to generate semiconducting polymeric hybrids based on siloxane units, which proceeds under essentially nonbasic conditions, is presented. This method generates solution-processable poly- (diketopyrrolopyrrole-alt-benzothiadiazole) (PDPPBT-Si) consisting of the hybrid siloxane substituents, which could not be made using conventional methods. PDPPBT-Si exhibits excellent ambipolar transistor performance with well-balanced hole and electron FET mobilities. The siloxane-containing DPP-thiophene polymer classes (PDPP3T-Si and PDPP4TSi), synthesized by this method, exhibit high hole mobility of up to 1.29 cm2V-1 s-1. This synthetic approach should provide access to a variety of novel siloxane-containing conjugated semiconductor classes by using a variety of aryldihalides and aryldiboronic acids/esters. [ABSTRACT FROM AUTHOR]