1. Recent progress of nitride-based light emitting devices.
- Author
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T. Mukai, S. Nagahama, M. Sano, T. Yanamoto, D. Morita, T. Mitani, Y. Narukawa, S. Yamamoto, I. Niki, M. Yamada, S. Sonobe, S. Shioji, K. Deguchi, T. Naitou, H. Tamaki, Y. Murazaki, and M. Kameshima
- Subjects
LIGHT emitting diodes ,QUANTUM theory ,ELECTRON distribution ,NITRIDES ,LASERS ,EPITAXY - Abstract
We review the recent progress of nitride-based light-emitting diodes (LEDs) and discuss the relation between dislocation density and quantum efficiency. We also discuss how to improve the external quantum efficiency of nitride-based LEDs. Secondly, the group-III nitride laser diodes (LDs), which emit from near-ultraviolet to pure-blue, are reviewed. Reducing threading dislocations can increase the lifetime of nitride LDs. Using the epitaxial lateral overgrowth technique, a dislocations density of the order of 10
5 cm-2 has been obtained. The relation between the lifetime of nitride LDs and the density of dislocations is discussed. Finally, near-ultraviolet LDs and pure-blue LDs are described. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]- Published
- 2003
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