1. Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source.
- Author
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Novikov, S. V., Staddon, C. R., Sahonta, S.-L., Oliver, R. A., Humphreys, C. J., and Foxon, C. T.
- Subjects
ALUMINUM nitride ,ALUMINUM gallium nitride ,WURTZITE ,MOLECULAR beam epitaxy ,ULTRAVIOLET radiation - Abstract
Recent developments with group III nitrides suggest Al
x Ga1-x N based LEDs can be new alternative commercially viable deep ultra-violet light sources. Due to a significant difference in the lattice parameters of GaN and AlN, Alx Ga1-x N substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite Alx Ga1-x N bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-ite Alx Ga1-x N films were grown by PA-MBE on 2-inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing Alx Ga1-x N samples. Growth rates of Alx Ga1-x N up to 3 µm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free-standing bulk Alx Ga1-x N layers in a single day's growth, which makes our MBE bulk growth technique commercially viable. [ABSTRACT FROM AUTHOR]- Published
- 2016
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