1. Reversibility of defect formation during oxygen‐assisted electron‐beam‐induced etching of graphene.
- Author
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Pillet, Guillaume, Freire‐Soler, Victor, Eroles, Marc Nuñez, Bacsa, Wolfgang, Dujardin, Erik, and Puech, Pascal
- Subjects
GRAPHENE ,ELECTRON beams ,CRYSTAL defects ,REACTIVE oxygen species ,RAMAN spectroscopy - Abstract
Abstract: We explore the defect formation on single‐layer graphene partially suspended over a microcavity upon etching by a focused electron beam in a reactive oxygen atmosphere. The formation of oxygenated defects in an area of several μm
2 around the cut is studied by Raman spectroscopy. The narrow symmetric Raman D band has the same bandwidth as the G band line width of supported graphene. For suspended graphene, the D bandwidth is larger. From the ratio of the intensity of the Raman D and D′ band (ID /ID′ ), it is concluded that mainly sp3 ‐type defects are formed on supported graphene and more defects with a different spectral signature are formed on suspended graphene. Annealing in reductive H2 /Ar atmosphere is found to remove bonded oxygen on supported graphene, whereas on suspended graphene with higher density of defects, defects are removed only partially. [ABSTRACT FROM AUTHOR]- Published
- 2018
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