1. Enhanced electrical properties in W/Cu co‐doped CaBi2Nb2O9 high‐temperature piezoelectric ceramics.
- Author
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Chen, Axiang, Chen, Zhenning, Liu, Yang, Zheng, Peng, Bai, Wangfeng, Li, Lili, Wen, Fei, Zheng, Liang, and Zhang, Yang
- Subjects
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PIEZOELECTRIC ceramics , *PIEZOELECTRIC devices , *ELECTRICAL resistivity , *DIELECTRIC loss , *PIEZOELECTRICITY , *CRYSTAL structure - Abstract
CaBi2Nb2O9 (CBN)‐based high‐temperature piezoelectric ceramics with the formula of CaBi2Nb2−x(W3/4Cu1/4)xO9 were prepared via the traditional solid‐state reaction method. Both the bulk microstructure and the electrical performance of the W/Cu co‐doped CBN‐based ceramics were systematically investigated. The results indicated that the W/Cu incorporation into the Nb‐site altered the crystal structure, which enhanced the piezoelectricity and resistivity. The ceramic with the composition CaBi2Nb1.96(W3/4Cu1/4)0.04O9 exhibited good performance with a high d33 (~14 pC/N) and TC (~939℃). Moreover, the ceramic exhibited a good electrical resistivity (ρ) of 4.91 × 105 Ω·cm and a low dielectric loss (tanδ) of 0.1 at 600℃. Furthermore, the ceramic that was annealed at 900℃ for 2 h presented a d33 value of 13 pC/N, thus indicating good thermal stability of the piezoelectric properties. All these results confirm that the CaBi2Nb1.96(W3/4Cu1/4)0.04O9 ceramic may act as a potential promising candidate for piezoelectric device applications in high‐temperature environments. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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