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0D organic metal halide hybrids (OMHHs) have recently emerged as a new generation of scintillation materials, due to their high luminescence quantum efficiency, sensitivity, stability, and cost‐effectiveness. While numerous 0D OMHH scintillators have been developed to date, most of them are based on solution grown single crystals that require time‐consuming synthesis and are limited in size. Here, high‐performance X‐ray scintillators based on facile solution processed 0D OMHH amorphous films are reported for the first time. By reacting triphenyl(9‐phenyl‐9H‐carbazol‐3‐yl) phosphonium bromide (TPPcarzBr) with manganese bromide (MnBr2), 0D (TPPcarz)₂MnBr₄ amorphous films can be prepared via solution processing with mild thermal annealing, which exhibits green photoluminescence with an emission maximum ≈517 nm and a photoluminescence quantum efficiency of ≈87%. The X‐ray scintillation of 0D (TPPcarz)₂MnBr₄ amorphous films is characterized to exhibit a light yield of 44600 photon MeV−1 and an outstanding linearity with a low limit of detection of 32.42 nGyairs−1 over a wide range of X‐ray dose rates. The versatile processability of 0D (TPPcarz)₂MnBr₄ is illustrated with remarkable recyclability, high cost‐effectiveness, and scalability for large‐scale production. By taking advantage of the amorphous nature of newly designed OMHHs, the approach opens up new opportunities for developing high‐performance, solution‐processable scintillators. [ABSTRACT FROM AUTHOR]

Antimony sulfide (Sb2S3) solar cells have attracted extensive attention in silicon‐based tandem solar cells. The performance of Sb2S3 devices fabricated by the vacuum method is limited by sulfur vacancies (VS) and surface oxide defects during high‐temperature processes. Herein, amorphous Sb2S3 film based on low‐temperature rapid thermal evaporation (RTE) technique is fabricated to overcome S loss. Moreover, a sulfur‐atmosphere recrystallization strategy is further developed to obtain high‐quality absorbers from the amorphous film. The element content of Sb2S3 film is completely in accord with the stoichiometric ratio (2:3), and the surface oxides are effectively suppressed, enhancing VOC and fill factor. Compared to the control directly crystallized film, the defect concentrations of the S‐recrystallized Sb2S3 film are reduced by 61%, exhibiting better uniformity and higher PN junction quality. Ultimately, the full‐inorganic Sb2S3 solar cells (FTO/TiO2/Sb2S3/Au) achieve an efficiency of 6.25%. The S‐atmosphere recrystallization process can effectively passivate bulk defects (VS and Sb2O3) and suppress recombination to improve device performance, which will provide new prospects for vacuum method‐based Sb2S3 thin film solar cells. [ABSTRACT FROM AUTHOR]

Dielectric film capacitors are considered as potential candidates for advanced power electronics technology due to their extremely high-power densities and outstanding mechanical and thermal stability, but the further improvement of energy storage density is still needed. Here, a strategy is proposed to enhance the energy storage properties by introducing nanoscale polarization regions into amorphous films, which can significantly improve the maximum polarization and maintain a high breakdown strength. The (1−x) BaTiO3-xBi(Ni0.5Zr0.5)O3 ((1−x)BT-xBNZ) thin films are fabricated by the sol– gel method and the amorphous films with nanoscale polarization regions are obtained by adjusting the preparation process. Consistent with the conjecture, amorphous phase and nanoscale polarization regions in the (1−x) BT-xBNZ films are clearly observed by electron diffraction. Results show that giant recoverable energy density of 103.7 J cm−3 with high energy efficiency of 88.3% are simultaneously achieved at 8.3 MV cm−1 in 0.92BT-0.08BNZ thin films. Furthermore, the 0.92BT-0.08BNZ thin film exhibits excellent thermal stability in a wide temperature range of 20–200°C, ΔWrec/Wrec20°C < 2.2%. This work provides a novel method for dielectric thin film capacitors applied in high temperature and electric field. [ABSTRACT FROM AUTHOR]

Dielectric film capacitors are considered as potential candidates for advanced power electronics technology due to their extremely high‐power densities and outstanding mechanical and thermal stability, but the further improvement of energy storage density is still needed. Here, a strategy is proposed to enhance the energy storage properties by introducing nanoscale polarization regions into amorphous films, which can significantly improve the maximum polarization and maintain a high breakdown strength. The (1−x)BaTiO3‐xBi(Ni0.5Zr0.5)O3 ((1−x)BT‐xBNZ) thin films are fabricated by the sol–gel method and the amorphous films with nanoscale polarization regions are obtained by adjusting the preparation process. Consistent with the conjecture, amorphous phase and nanoscale polarization regions in the (1−x)BT‐xBNZ films are clearly observed by electron diffraction. Results show that giant recoverable energy density of 103.7 J cm−3 with high energy efficiency of 88.3% are simultaneously achieved at 8.3 MV cm−1 in 0.92BT‐0.08BNZ thin films. Furthermore, the 0.92BT‐0.08BNZ thin film exhibits excellent thermal stability in a wide temperature range of 20–200 °C, ∆Wrec/Wrec20 °C < 2.2%. This work provides a novel method for dielectric thin film capacitors applied in high temperature and electric field. [ABSTRACT FROM AUTHOR]

Lead halide perovskites are among the most exciting classes of optoelectronic materials due to their unique ability to form high‐quality crystals with tunable bandgaps in the visible and near‐infrared using simple solution precipitation reactions. This facile crystallization is driven by their ionic nature; just as with other salts, it is challenging to form amorphous halide perovskites, particularly in thin‐film form where they can most easily be studied. Here, rapid desolvation promoted by the addition of acetate precursors is shown as a general method for making amorphous lead halide perovskite films with a wide variety of compositions, including those using common organic cations (methylammonium and formamidinium) and anions (bromide and iodide). By controlling the amount of acetate, it is possible to tune from fully crystalline to fully amorphous films, with an interesting intermediate state consisting of crystalline islands embedded in an amorphous matrix. The amorphous lead halide perovskite has a large and tunable optical bandgap. It improves the photoluminescence quantum yield and lifetime of incorporated crystalline perovskite, opening up the intriguing possibility of using amorphous perovskite as a passivating contact, as is currently done in record efficiency silicon solar cells. [ABSTRACT FROM AUTHOR]

Sputtered Ge2Sb2Te5 (GST) films are utilized in phase‐change devices, whereas the quantitative reproducibility of fundamental properties such as refractive index and electrical conductivity remains unsatisfactory. Herein, it is exemplified that the properties are considerably affected by sputter conditions. It seems that high‐quality amorphous films are deposited with slow dc sputtering at high voltages and low Ar pressures. It is also discussed whether the cubic GST is a degenerate or a nondegenerate semiconductor. [ABSTRACT FROM AUTHOR]

Amorphous Fe−Co−P−C films supported on carbon fiber paper were prepared by using an inexpensive conventional magnetron co‐sputtering technique, and the effects of the Co content on electrocatalytic performance were assessed. These Fe80-x CoxP13C7 (x=20, 40 or 60) films performed well as electrocatalysts and exhibited good durability during the oxygen evolution reaction in 1.0 M KOH. Increases in the Co concentration improved the electrocatalytic activity, and the Fe20Co60P13C7 film produced a low overpotential of approximately 310 mV at 10 mA cm−2, with a low Tafel slope of approximately 31 mV dec−1. This material also maintained a constant overpotential for at least 20 h. Based on the results of this study, these materials represent a new approach to the development of highly efficient, inexpensive catalysts for water electrolysis. [ABSTRACT FROM AUTHOR]

As2S3:Cd films with nominal Cd content x up to 4 at.% were prepared by thermal evaporation. Their amorphous structure is confirmed by Raman spectroscopy. The film surface roughness estimated from atomic force microscopy does not exceed 1 nm. Energy‐dispersive X‐ray spectroscopy and X‐ray photoelectron spectroscopy show a strong decrease of Cd content with the film depth. Peaks of CdS longitudinal optical phonon and its overtones emerging in the Raman spectra of films with x ≥ 2 at.% Cd are the evidence for the laser irradiation‐induced formation of CdS crystallites in the As2S3:Cd films. The downward shift of the CdS Raman peak frequencies is mainly explained by tensile strain undergone by the CdS crystallites in the films caused by material transfer from the laser spot due to the photoplastic effect. As follows from the Raman spectra, under above‐bandgap laser illumination of Cd‐doped amorphous As2S3 films CdS nanocrystals are formed. The CdS nanocrystals undergo tensile strain of up to 1.5 GPa caused by the film material transfer from the laser spot due to the photoplastic effect. The Cd content in the film strongly decreases with the film depth. [ABSTRACT FROM AUTHOR]