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In recent years, constructing van der Waals (vdW) heterostructures based on different 2D materials has been a highly effective way to obtain desired electronic and optical properties. Herein, on the basis of first‐principles calculations, a 2D vdW heterostructure is constructed by vertically stacking the indirect‐bandgap gallium nitride (GaN) and silicane (SiH) monolayers. For the formed heterostructure, the structural, electronic, and optical properties are all computed. The obtained results show that the heterostructure is a direct‐bandgap semiconductor with typical type‐II band alignment. Furthermore, the linearly tunable bandgap, together with the robust type‐II band alignment, can be realized by applying vertical strains or external electric fields. It is also found that both monolayers exhibit the same UV absorption range and the notably enhanced UV absorption is obtained after forming the heterostructure. In particular, the maximum absorptivity can reach to 21.6%. These results are expected to provide useful references for the design of ultraviolet optoelectronic devices based on the 2D GaN/SiH vdW heterostructure. [ABSTRACT FROM AUTHOR]