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Individuals with methamphetamine use disorder (MUD) often experience anxiety and depressive symptoms during abstinence, which can worsen the likelihood of relapse. Thus, it is essential to understand the neuro‐mechanism behind methamphetamine use and its associated emotional withdrawal symptoms in order to develop effective clinical strategies. This study aimed to evaluate associations between emotional withdrawal symptoms and structural covariance networks (SCNs) based on cortical thickness (CTh) across the brain. The CTh measures were obtained from Tl‐weighted MRI data from a sample of 48 males with MUD during abstinence and 48 male healthy controls. The severity of anxiety and depressive symptoms was assessed by the Hamilton Anxiety Scale (HAMA) and depression (HAMD) scales. Two important nodes belonging to the brain reward system, the right rostral anterior cingulate cortex (rACC) and medial prefrontal cortex (medPFC), were selected as seeds to conduct SCNs and modulation analysis by emotional symptoms. MUDs showed higher structural covariance between the right rACC and regions in the dorsal attention, right frontoparietal, auditory, visual and limbic networks. They also displayed higher structural covariance between the right medPFC and regions in the limbic network. Moreover, the modulation analysis showed that higher scores on HAMA were associated with increased covariance between the right rACC and the left parahippocampal and isthmus cingulate cortex in the default mode network. These outcomes shed light on the complex neurobiological mechanisms underlying methamphetamine use and its associated emotional withdrawal symptoms and may provide new insights into the development of effective treatments for MUD. [ABSTRACT FROM AUTHOR]

The liquid‐air interface offers a platform for the in‐plane growth of free‐standing materials. However, it is rarely used for inorganic perovskites and ultrathin non‐layered perovskites. Herein the liquid‐air interfacial synthesis of inorganic perovskite nanosheets (Cs3Bi2I9, Cs3Sb2I9) is achieved simply by drop‐casting the precursor solution with only the addition of iodine. The products are inaccessible without iodine addition. The thickness and lateral size of these nanosheets can be adjusted through the iodine concentration. The high volatility of the iodine spontaneously drives precursors that normally stay in the liquid to the liquid‐air interface. The iodine also repairs in situ iodine vacancies during perovskite growth, giving enhanced optical and optoelectronic properties. The liquid‐air interfacial growth of ultrathin perovskites provides multi‐degree‐of‐freedom for constructing perovskite‐based heterostructures and devices at atomic scale. [ABSTRACT FROM AUTHOR]

The liquid‐air interface offers a platform for the in‐plane growth of free‐standing materials. However, it is rarely used for inorganic perovskites and ultrathin non‐layered perovskites. Herein the liquid‐air interfacial synthesis of inorganic perovskite nanosheets (Cs3Bi2I9, Cs3Sb2I9) is achieved simply by drop‐casting the precursor solution with only the addition of iodine. The products are inaccessible without iodine addition. The thickness and lateral size of these nanosheets can be adjusted through the iodine concentration. The high volatility of the iodine spontaneously drives precursors that normally stay in the liquid to the liquid‐air interface. The iodine also repairs in situ iodine vacancies during perovskite growth, giving enhanced optical and optoelectronic properties. The liquid‐air interfacial growth of ultrathin perovskites provides multi‐degree‐of‐freedom for constructing perovskite‐based heterostructures and devices at atomic scale. [ABSTRACT FROM AUTHOR]

Bi2O2Se, a high‐mobility and air‐stable 2D material, has attracted substantial attention for application in integrated logic electronics and optoelectronics. However, achieving an overall high performance over a wide spectral range for Bi2O2Se‐based devices remains a challenge. A broadband phototransistor with high photoresponsivity (R) is reported that comprises high‐quality large‐area (≈180 µm) Bi2O2Se nanosheets synthesized via a modified chemical vapor deposition method with a face‐down configuration. The device covers the ultraviolet (UV), visible (Vis), and near‐infrared (NIR) wavelength ranges (360–1800 nm) at room temperature, exhibiting a maximum R of 108 696 A W−1 at 360 nm. Upon illumination at 405 nm, the external quantum efficiency, R, and detectivity (D*) of the device reach up to 1.5 × 107%, 50055 A W−1, and 8.2 × 1012 Jones, respectively, which is attributable to a combination of the photogating, photovoltaic, and photothermal effects. The devices reach a −3 dB bandwidth of 5.4 kHz, accounting for a fast rise time (τrise) of 32 µs. The high sensitivity, fast response time, and environmental stability achieved simultaneously in these 2D Bi2O2Se phototransistors are promising for high‐quality UV and IR imaging applications. [ABSTRACT FROM AUTHOR]