Search

The tribovoltaic effect raises an emerging semiconductor energy technology and silicon‐based tribovoltaic nanogenerator (Si‐TVNG) has aroused great attentions. However, the electrical output of Si‐TVNG is extremely unstable due to its complicated mechanism. Here, a competitive mechanism between the built‐in electric field (BEF) and the interfacial electric field (IEF) is proposed to determine the current direction and magnitude of the Si‐TVNG. The results indicate that the natural oxide layer, load pressure, and resistivity of Si significantly affect the IEF and BEF. The natural oxide layer can store surface charges by contact electrification, resulting in a IEF dominant carriers transport process. Conversely, lower resistivity and higher load pressure can reduce the contact resistance, thereby decreasing the surface charges caused by contact electrification and leading to a BEF dominant carrier transport process. This work contributes to deeper understandings of the tribovoltaic effect and further clarifies the theoretical mechanisms of carrier excitation and directional transport. [ABSTRACT FROM AUTHOR]

A series of direct‐current tribovoltaic nanogenerators (TVNGs) with high current density have been developed for energy harvesting and mechanical sensing recently, but the lead wires that need to be connected to two relatively moving parts have greatly restricted the application of TVNG. Herein, a freestanding‐mode TVNG (FTVNG) is proposed based on metal, p‐type silicon (p‐Si), and n‐type silicon (n‐Si). As the freestanding part of metal simultaneously rubs against p‐Si and n‐Si, opposite direct current (DC) outputs can be generated, thus forming a DC output from p‐Si to n‐Si in the external circuit. Resulting from the distinctive structure, FTVNGs are applicable for harvesting energy from moving objects without attached wires. Additionally, by using steel needles to precisely control the actual contact area, the electrical output characteristics and influence laws of the tribovoltaic effect under different working parameters such as area and speed are studied. Moreover, FTVNG is integrated into the traditional rolling bearing as a triboelectric bearing, realizing energy recovery from the rotational motion of mechanical parts and speed sensing, which demonstrates the great application potential of TVNG in basic components and parts. [ABSTRACT FROM AUTHOR]

The triboelectric nanogenerator (TENG) is a new energy technology that is enabled by coupled contact electrification and electrostatic induction. The conventional TENGs are usually based on organic polymer insulator materials, which have the limitations and disadvantages of high impedance and alternating output current. Here, a tribovoltaic effect based metal–semiconductor direct‐current triboelectric nanogenerator (MSDC‐TENG) is reported. The tribovoltaic effect is facilitated by direct voltage and current by rubbing a metal/semiconductor on another semiconductor. The frictional energy released by the forming atomic bonds excites nonequilibrium carriers, which are directionally separated to form a current under the built‐in electric field. The continuous average open‐circuit voltage (10–20 mV), short‐circuit direct‐current output (10–20 µA), and low impedance characteristic (0.55–5 kΩ) of the MSDC‐TENG can be observed during relative sliding of the metal and silicon. The working parameters are systematically studied for electric output and impedance characteristics. The results reveal that faster velocity, larger pressure, and smaller area can improve the maximum power density. The internal resistance is mainly determined by the velocity and the electrical resistance of semiconductor. This work not only expands the material candidates of TENGs from organic polymers to semiconductors, but also demonstrates a tribovoltaic effect based electric energy conversion mechanism. [ABSTRACT FROM AUTHOR]